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27 Jul 2009

Volume 95, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 95, 043110 (2009); http://dx.doi.org/10.1063/1.3184784 (3 pages)

Felix Loske and Angelika Kühnle
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Ultrafast absorption recovery dynamics of 1300 nm quantum dot saturable absorber mirrors

M. P. Lumb, E. Clarke, E. Harbord, P. Spencer, R. Murray, F. Masia, P. Borri, W. Langbein, C. G. Leburn, C. Jappy, N. K. Metzger, C. T. A. Brown, and W. Sibbett

Appl. Phys. Lett. 95, 041101 (2009); http://dx.doi.org/10.1063/1.3186081 (3 pages) | Cited 2 times

Online Publication Date: 27 July 2009

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We compare the performance of two quantum dot saturable absorber mirrors with one device operating at the quantum dot ground state transition whereas the other operates at the first excited state transition. Time-resolved photoluminescence and heterodyne four-wave mixing experiments demonstrate faster recovery of the excited-state device compared to the ground-state device. Femtosecond pulses were achieved with both devices, with the ground-state device producing 91 fs pulses and the excited-state device producing 86 fs pulses in a Cr:forsterite laser. The fast absorption recovery dynamics indicates the potential of devices exploiting excited-state transitions for use in high repetition rate lasers.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.Bh Lenses, prisms and mirrors

Midinfrared intersubband absorption in InGaAs/GaAsSb multiple quantum wells

M. Nobile, H. Detz, E. Mujagić, A. M. Andrews, P. Klang, W. Schrenk, and G. Strasser

Appl. Phys. Lett. 95, 041102 (2009); http://dx.doi.org/10.1063/1.3189703 (3 pages) | Cited 8 times

Online Publication Date: 27 July 2009

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We report on the observation of midinfrared intersubband (ISB) absorption in InGaAs/GaAsSb multiple quantum wells grown lattice-matched to InP substrates by molecular beam epitaxy. ISB absorption in a broad wavelength region (5.8–11.6 μm) is observed in quantum wells with well widths ranging between 4.5 and 12 nm. The conduction band offset at the InGaAs/GaAsSb heterointerface is measured to be 360 meV, giving an excellent agreement between the theoretically calculated ISB transition energies and the Fourier-transform infrared spectroscopy measurements over the whole range of well widths under investigation.
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78.67.De Quantum wells
81.07.St Quantum wells
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.30.Fs III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
71.20.Nr Semiconductor compounds

Observation of enhancement and suppression in four-wave mixing processes

Changbiao Li, Huaibin Zheng, Yanpeng Zhang, Zhiqiang Nie, Jianping Song, and Min Xiao

Appl. Phys. Lett. 95, 041103 (2009); http://dx.doi.org/10.1063/1.3189813 (3 pages) | Cited 10 times

Online Publication Date: 27 July 2009

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We report our observations of enhancement and suppression between two competing four-wave mixing (FWM) processes. The results show the evolution of the dressed effects (from pure enhancement into pure suppression) in the degenerate FWM processes. Moreover, due to induced atomic coherence in the system, there exist different interplays between these two FWM processes via different detuning parameters. In addition, the power dependences of enhancement and suppression are studied. Theoretical calculations are carried out, which are in good agreement with the experimental observations.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Single-mode 2.4 μm InGaAsSb/AlGaAsSb distributed feedback lasers for gas sensing

J. A. Gupta, P. J. Barrios, J. Lapointe, G. C. Aers, and C. Storey

Appl. Phys. Lett. 95, 041104 (2009); http://dx.doi.org/10.1063/1.3189814 (3 pages) | Cited 8 times

Online Publication Date: 27 July 2009

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Single-mode laser diodes on GaSb substrates were developed using InGaAsSb/AlGaAsSb triple quantum well active regions grown by molecular beam epitaxy. The devices were fabricated using lateral Cr gratings, with a grating pitch designed to coincide with a strong absorption feature of HF gas, deposited adjacent to a dry-etched narrow ridge waveguide. High sidemode suppression was achieved, and in 20 °C continuous-wave operation, devices with a 400 μm long cavity provided 9 mW total output power at the 2396 nm target wavelength. High-resolution direct absorption measurements of HF gas agreed with HiTran calculations, yielding an absorption linewidth of 0.030 nm.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.79.Dj Gratings
85.30.De Semiconductor-device characterization, design, and modeling

Digital optical spectrometer-on-chip

S. Babin, A. Bugrov, S. Cabrini, S. Dhuey, A. Goltsov, I. Ivonin, E.-B. Kley, C. Peroz, H. Schmidt, and V. Yankov

Appl. Phys. Lett. 95, 041105 (2009); http://dx.doi.org/10.1063/1.3190199 (3 pages) | Cited 8 times

Online Publication Date: 27 July 2009

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A concept of digital optical spectrometer-on-chip is proposed and results of their fabrication and characterization are reported. The devices are based on computer-designed digital planar holograms which involves millions of lines specifically located and oriented in order to direct output light into designed focal points according to the wavelength. Spectrometers were fabricated on silicon dioxide and hafnium dioxide planar waveguides using electron beam lithography and dry etching. Optical performances of devices with up to 1000 channels for a central wavelength of 660 nm are reported.
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07.60.-j Optical instruments and equipment
85.60.-q Optoelectronic devices
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
85.40.Hp Lithography, masks and pattern transfer
42.40.Jv Computer-generated holograms

Optical black hole: Broadband omnidirectional light absorber

Evgenii E. Narimanov and Alexander V. Kildishev

Appl. Phys. Lett. 95, 041106 (2009); http://dx.doi.org/10.1063/1.3184594 (3 pages) | Cited 78 times

Online Publication Date: 27 July 2009

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We develop an approach to broad-band omnidirectional light absorption, based on light propagation in a metamaterial structure forming an effective “black hole.” The proposed system does not rely on magnetic response, is nonresonant, and can be fabricated from existing materials.
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42.70.-a Optical materials

Damping of the tunneling mechanism in high-order harmonic generation processes induced by femtosecond visible laser pulses

A. Simoncig, A. Caretta, B. Ressel, L. Poletto, and F. Parmigiani

Appl. Phys. Lett. 95, 041107 (2009); http://dx.doi.org/10.1063/1.3186358 (3 pages)

Online Publication Date: 28 July 2009

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The high-order harmonic generation (HHG) of coherent light pulses in gases is strictly dependent on the ionization dynamics that delocalizes the electron wave function in the laser field continuum. Here we report on the investigation of such dynamics by varying the energy of a 400 nm, 60 fs driving laser pulse. The experimental data provide the unambiguous evidence of a hybrid dynamical region, not described by the full-tunneling approximation models, where the HHG photon number exponentially decays when the Keldysh parameter is varied from 1 to 3. Finally, a phenomenological model, suitable to account for this hybrid regime, is reported.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
51.70.+f Optical and dielectric properties

Resonant coupling of quantum dot intersublevel transitions with midinfrared photonic crystal modes

E. Homeyer, J. Houel, X. Checoury, F. Delgehier, S. Sauvage, P. Boucaud, R. Braive, L. Le Gratiet, L. Leroy, A. Miard, A. Lemaître, and I. Sagnes

Appl. Phys. Lett. 95, 041108 (2009); http://dx.doi.org/10.1063/1.3189812 (3 pages) | Cited 1 time

Online Publication Date: 28 July 2009

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We show that quantum dot intersublevel transitions can be coupled to midinfrared photonic crystal modes. The coupling is observed under optical pumping with S-P intersublevel transitions of InGaAs self-assembled quantum dots resonant around 20 μm wavelength. An enhancement in the intersublevel absorption and a spectral tuning are evidenced when the optical modes of two-dimensional photonic crystals enter in resonance with the photoinduced intersublevel absorption. This effect is illustrated in the case of GaAs two-dimensional photonic crystal membranes with lattice periodicities of 10.5, 9.5, and 8.5 μm containing multilayers of self-assembled quantum dots.
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78.67.Hc Quantum dots
78.30.Fs III-V and II-VI semiconductors
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
42.70.Qs Photonic bandgap materials

High efficiency light emitting diode with anisotropically etched GaN-sapphire interface

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang

Appl. Phys. Lett. 95, 041109 (2009); http://dx.doi.org/10.1063/1.3190504 (3 pages) | Cited 11 times

Online Publication Date: 28 July 2009

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We report the fabrication and study of high efficiency ultraviolet light emitting diodes with inverted micropyramid structures at GaN-sapphire interface. The micropyramid structures were created by anisotropic chemical wet etching. The pyramid structures have significantly enhanced the light output efficiency and at the same time also improved the crystal quality by partially relieving the strain and reducing the dislocation defects in GaN. The electroluminescent output power at normal direction was enhanced by 120% at 20 mA injection current and the output power integrated over all directions was enhanced by 85% compared to a reference sample.
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85.60.Jb Light-emitting devices
81.05.Ea III-V semiconductors

Laser wavelength effects in ultrafast near-field laser nanostructuring of Si

Vassilia Zorba, Xianglei Mao, and Richard E. Russo

Appl. Phys. Lett. 95, 041110 (2009); http://dx.doi.org/10.1063/1.3193537 (3 pages) | Cited 10 times

Online Publication Date: 29 July 2009

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We study the effect of laser wavelength (400 and 800 nm) on the near-field processing of crystalline silicon (Si) in the femtosecond pulse duration regime through subwavelength apertures. Distinct differences in the obtained nanostructures are found in each case both in terms of their physical sizes as well as their structure, which can be tuned between craters and protrusions. A single or a few femtosecond pulses can deliver enough energy on the substrate to induce subdiffraction limited surface modification, which is among the smallest ever reported in subwavelength apertured near-field scanning optical microscope schemes.
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81.16.-c Methods of micro- and nanofabrication and processing
81.20.Wk Machining, milling
61.46.-w Structure of nanoscale materials
42.62.-b Laser applications
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Temperature dependence of the energy transfer from amorphous silicon nitride to Er ions

R. Li, S. Yerci, and L. Dal Negro

Appl. Phys. Lett. 95, 041111 (2009); http://dx.doi.org/10.1063/1.3186062 (3 pages) | Cited 18 times

Online Publication Date: 29 July 2009

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The 1.54 μm photoluminescence and decay time of Er-doped amorphous silicon nitride films with different Si concentrations are studied in the temperature range of 4 to 320 K. The temperature quenching of the Er emission lifetime demonstrates the presence of nonradiative trap centers due to excess Si in the films. The temperature dependence and the dynamics of the energy coupling between amorphous silicon nitride and Er ions are investigated at different temperatures using two independent methods, which demonstrate phonon-mediated energy coupling. These results can lead to the engineering of more efficient Er-doped, Si-based light sources for on-chip nanophotonics applications.
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78.55.Qr Amorphous materials; glasses and other disordered solids
63.22.Dc Free films
61.72.up Other materials

Tapered photoconductive terahertz field probe tip with subwavelength spatial resolution

Markus Wächter, Michael Nagel, and Heinrich Kurz

Appl. Phys. Lett. 95, 041112 (2009); http://dx.doi.org/10.1063/1.3189702 (3 pages) | Cited 14 times

Online Publication Date: 29 July 2009

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In this work a photoconductive probe tip applicable for near- and far-field measurements in the terahertz frequency regime is demonstrated as a powerful alternative to existing terahertz scanning near-field optical microscopy approaches. The probe tip is based on a triangular-shaped patch of freestanding low-temperature-grown GaAs of only 1.3 μm thickness with a pair of tapered metallic wires on top. Using nonresonant electric field enhancement at the tip of the probing device, 10 μm wide metallic structures are spatially resolved and a bandwidth of 2 THz is demonstrated.
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85.60.-q Optoelectronic devices

Photoluminescence properties of erbium doped InGaN epilayers

A. Sedhain, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada

Appl. Phys. Lett. 95, 041113 (2009); http://dx.doi.org/10.1063/1.3193532 (3 pages) | Cited 1 time

Online Publication Date: 30 July 2009

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We report on the photoluminescence properties of erbium (Er) doped InxGa1−xNa epilayers synthesized by metal organic chemical vapor deposition. The crystalline quality and surface morphology of Er doped In0.05Ga0.95N were nearly identical to those of Er doped GaN. The photoluminescence intensity of the 1.54 μm emission in Er doped In0.05Ga0.95N was an order of magnitude lower than in Er doped GaN and decreased with the increase of the In content. The reduction in 1.54 μm emission intensity was accompanied by enhanced emission intensities of deep level impurity transition lines.
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78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
61.72.uj III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.ag Semiconductors
68.35.bg Semiconductors

Observation of a fifth-order optical nonlinearity in Bi0.9La0.1Fe0.98Mg0.02O3 ferroelectric thin films

Bing Gu, Yang Wang, Wei Ji, and John Wang

Appl. Phys. Lett. 95, 041114 (2009); http://dx.doi.org/10.1063/1.3191668 (3 pages) | Cited 4 times

Online Publication Date: 30 July 2009

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Ferroelectric Bi0.9La0.1Fe0.98Mg0.02O3 thin films with high optical quantity were deposited on quartz substrates by radio frequency magnetron sputtering at 650 °C. The interplay between third- and fifth-order optical nonlinearities is observed by performing Z-scans under femtosecond laser excitation with 1.60 eV photon energy. The measured third-order nonlinearities mainly originate from electronic Kerr effect and two-photon absorption (2PA), while the population redistribution assisted by 2PA leading to an equivalent stepwise χ(3):χ(1) process is the main mechanism of the fifth-order effect.
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78.66.Nk Insulators
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films

Enhanced Raman scattering by spatially distributed atomic coherence

L. Q. Chen, Guo-Wan Zhang, Chun-Hua Yuan, Jietai Jing, Z. Y. Ou, and Weiping Zhang

Appl. Phys. Lett. 95, 041115 (2009); http://dx.doi.org/10.1063/1.3193550 (3 pages) | Cited 6 times

Online Publication Date: 31 July 2009

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We demonstrate experimentally an enhancement in Raman scattering in Rb atomic vapor due to the atomic coherence initially prepared by a weak write laser. We find that the enhanced Raman scattering depends on the spatial distribution of the atomic spin coherence and can be explained with a simple picture of three-wave mixing. This effect can in principle be used to have a light conversion efficiency near unity in Raman process. Such an enhanced Raman scattering may have practical applications in quantum information, nonlinear optics, and laser spectroscopy.
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32.30.-r Atomic spectra
32.80.-t Photoionization and excitation
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
03.67.-a Quantum information
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