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27 Jul 2009

Volume 95, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 95, 043110 (2009); http://dx.doi.org/10.1063/1.3184784 (3 pages)

Felix Loske and Angelika Kühnle
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Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films

D. G. Zhao, D. S. Jiang, J. J. Zhu, Z. S. Liu, H. Wang, S. M. Zhang, Y. T. Wang, and Hui Yang

Appl. Phys. Lett. 95, 041901 (2009); http://dx.doi.org/10.1063/1.3187540 (3 pages) | Cited 5 times

Online Publication Date: 27 July 2009

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A close relationship is found between the blue and yellow luminescence bands in n-type GaN films, which are grown without intentional acceptor doping. The intensity ratio of blue luminescence to yellow luminescence (IBL/IYL) decreases with the increase in edge dislocation densities as demonstrated by the (102) full width at half maximum of x-ray diffraction. In addition, the IBL/IYL ratio decreases with the increase in Si doping. It is suggested that the edge dislocation and Si impurity play important roles in linking the blue and yellow luminescence.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
61.72.uj III-V and II-VI semiconductors
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
68.55.ag Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Surface Bloch waves in metamaterial and metal-dielectric superlattices

Slobodan M. Vukovic, Ilya V. Shadrivov, and Yuri S. Kivshar

Appl. Phys. Lett. 95, 041902 (2009); http://dx.doi.org/10.1063/1.3186041 (3 pages) | Cited 10 times

Online Publication Date: 28 July 2009

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We study the properties of electromagnetic Bloch waves in semi-infinite periodic structures created by alternating metamaterial and dielectric layers. We derive and analyze the dispersion relations in the long-wavelength limit for both TE- and TM-polarized surface Bloch modes for magnetic metamaterials with negative refraction and metal-dielectric plasmonic superlattices. We reveal that in the subwavelength regime, the bulk modes are characterized by three different refractive indices (“trirefringence”), while the surface modes can propagate parallel to the Bloch wavevector and along the interface between superlattice and semi-infinite dielectric.
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42.70.-a Optical materials
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.21.Cd Superlattices
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.40.Ns Metal-nonmetal contacts

Composition dependence of photoluminescence of GaAs1−xBix alloys

Xianfeng Lu, D. A. Beaton, R. B. Lewis, T. Tiedje, and Yong Zhang

Appl. Phys. Lett. 95, 041903 (2009); http://dx.doi.org/10.1063/1.3191675 (3 pages) | Cited 33 times

Online Publication Date: 28 July 2009

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Room temperature photoluminescence (PL) spectra have been measured for GaAs1−xBix alloys with Bi concentrations in the 0.2%–10.6% range. The decrease in the PL peak energy with increasing Bi concentration follows the reduction in bandgap computed from density functional theory. The PL peak energy is found to increase with PL pump intensity, which we attribute to the presence of shallow localized states associated with Bi clusters near the top of the valence band. The PL intensity is found to increase with Bi concentration at low Bi concentrations, peaking at 4.5% Bi.
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81.05.Ea III-V semiconductors
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.20.Nr Semiconductor compounds
78.55.Cr III-V semiconductors

Texture inheritance in thin-film growth of Cu2ZnSnS4

A. Weber, S. Schmidt, D. Abou-Ras, P. Schubert-Bischoff, I. Denks, R. Mainz, and H. W. Schock

Appl. Phys. Lett. 95, 041904 (2009); http://dx.doi.org/10.1063/1.3192357 (3 pages) | Cited 10 times

Online Publication Date: 29 July 2009

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The growth mechanism of Cu2ZnSnS4 thin films is studied starting from highly textured ZnS precursor films. These precursors were converted to Cu2ZnSnS4 by subsequent deposition of Cu, Sn, and S at high temperatures. Orientation measurements revealed that the 〈111〉 texture of the ZnS precursor is inherited by the Cu2ZnSnS4 layer. On the basis of texture and transmission electron microscopy measurements, a growth model is proposed. According to this model, the initial formation of Cu2ZnSnS4 nuclei is controlled by a topotactic or epitactic mechanism with respect to the ZnS precursor. The further growth of the Cu2ZnSnS4 grains appears to be independent of the precursor lattice.
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68.55.ag Semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
84.60.Jt Photoelectric conversion
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
61.66.Fn Inorganic compounds

Phase resonances on metal gratings of identical, equally spaced alternately tapered slits

Helen J. Rance, Oliver K. Hamilton, J. Roy Sambles, and Alastair P. Hibbins

Appl. Phys. Lett. 95, 041905 (2009); http://dx.doi.org/10.1063/1.3176408 (3 pages) | Cited 8 times

Online Publication Date: 29 July 2009

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Phase resonances are observed in the microwave response of metal transmission gratings comprised of identical but alternately orientated tapered slits. Despite each slit having identical dimensions, and being equally spaced from its neighbors, these high-Q mode are nonetheless supported even at normal incidence. The excitation of these modes is attributed to the interference between Fabry–Perot-like modes and diffractively coupled surface waves.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
42.79.Dj Gratings

Fabrication and characterization of Er silicates on SiO2/Si substrates

X. J. Wang, T. Nakajima, H. Isshiki, and T. Kimura

Appl. Phys. Lett. 95, 041906 (2009); http://dx.doi.org/10.1063/1.3192407 (3 pages) | Cited 15 times

Online Publication Date: 30 July 2009

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Er silicates have been fabricated on SiO2/Si(100) substrates by the sol-gel method. In contrast to Si(100) substrates, on which the Er2SiO5 phase in general crystallizes, the α-Er2Si2O7 with the photoluminescence (PL) main peak at 1531 nm formed at 1200 °C. The integrated PL intensity of the α-Er2Si2O7 phase was about five to ten times stronger than that of the Er2SiO5 phase, and the α-Er2Si2O7 phase showed a relatively long decay time (100–300 μs) in contrast to several tens of microseconds of the Er2SiO5 phase. Excess O from SiO2 layer may lead to the formation of the α-Er2Si2O7 phase.
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68.55.aj Insulators
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
78.55.Hx Other solid inorganic materials
78.66.Nk Insulators

Glassy steel optimized for glass-forming ability and toughness

Marios D. Demetriou, Georg Kaltenboeck, Jin-Yoo Suh, Glenn Garrett, Michael Floyd, Chase Crewdson, Douglas C. Hofmann, Henry Kozachkov, Aaron Wiest, Joseph P. Schramm, and William L. Johnson

Appl. Phys. Lett. 95, 041907 (2009); http://dx.doi.org/10.1063/1.3184792 (3 pages) | Cited 12 times

Online Publication Date: 31 July 2009

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An alloy development strategy coupled with toughness assessments and ultrasonic measurements is implemented to design a series of iron-based glass-forming alloys that demonstrate improved glass-forming ability and toughness. The combination of good glass-forming ability and high toughness demonstrated by the present alloys is uncommon in Fe-based systems, and is attributed to the ability of these compositions to form stable glass configurations associated with low activation barriers for shear flow, which tend to promote plastic flow and give rise to a toughness higher than other known Fe-based bulk-glass-forming systems.
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64.70.pe Metallic glasses
81.40.Lm Deformation, plasticity, and creep
62.20.fq Plasticity and superplasticity
62.20.mm Fracture
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
61.43.Fs Glasses

Realization of photoreflectance spectroscopy in very-long wave infrared of up to 20 μm

Jun Shao, Lu Chen, Xiang Lü, Wei Lu, Li He, Shaoling Guo, and Junhao Chu

Appl. Phys. Lett. 95, 041908 (2009); http://dx.doi.org/10.1063/1.3193546 (3 pages) | Cited 9 times

Online Publication Date: 31 July 2009

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The application of photoreflectance (PR) spectroscopy had been for long time restricted to short-wavelength spectral region and was recently pushed to long wave infrared about 9 μm. In this letter, PR measurement in the very-long wave infrared of up to 20 μm is demonstrated by a step-scan Fourier transform infrared spectrometer-based technique. An arsenic-doped narrow-gap HgCdTe epilayer is measured at 77 K, the resultant infrared PR spectrum is analyzed by line shape function, and donor and acceptor levels are discussed with aid of photoluminescence measurement at nominally identical temperature. The results suggest promising application of PR spectroscopy in the very-long wave infrared spectral region.
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78.20.-e Optical properties of bulk materials and thin films
78.55.Et II-VI semiconductors
71.55.Gs II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
78.66.Hf II-VI semiconductors
81.05.Dz II-VI semiconductors
61.72.uj III-V and II-VI semiconductors

Effect of bias stress on mechanically strained low temperature polycrystalline silicon thin film transistor on stainless steel substrate

I-Hsuan Peng, Po-Tsun Liu, and Tai-Bor Wu

Appl. Phys. Lett. 95, 041909 (2009); http://dx.doi.org/10.1063/1.3193654 (3 pages) | Cited 2 times

Online Publication Date: 31 July 2009

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This paper reported the variation in performance of bias stressed low-temperature polycrystalline silicon thin film transistors (LTPS TFTs) fabricated on metal foil substrate for flexible display applications. The mobility, threshold voltage (Vth), and trap density (Nt) of the proposed p-channel poly-Si TFT as a function of curvature radii were investigated. The significant increase in Vth by 9% was observed as the compressive or tensile mechanical strain increases to 0.1%. In addition, the hole mobility increases by 7% due to an increased compressive strain of 0.1%, while hole mobility decreases by 3.5% with the increase in tensile strain of 0.1%. After dc bias stressing, the LTPS TFT with mechanical strain had better performance than that on flat state in both the mobility drop and Vth shift. Mechanical strain influences the lattice arrangement and electric field at the drain electrode region that resisted device degradation in early stressing period.
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85.30.Tv Field effect devices

The epitaxial growth of indium nitride using berlinite (AlPO4) and other piezoelectric crystals of the quartz family as substrates

M. Moret, S. Ruffenach, O. Briot, B. Gil, and M. Pauthe

Appl. Phys. Lett. 95, 041910 (2009); http://dx.doi.org/10.1063/1.3193655 (3 pages) | Cited 3 times

Online Publication Date: 31 July 2009

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We report the growth of indium nitride on AlPO4, which is a piezoelectric substrate, by using metal organic vapor phase epitaxy (MOVPE). The substrate we used was the as-grown (011) surface of an AlPO4 crystal grown by hydrothermal synthesis. InN growth occurs as the nonpolar M-plane. The structural, optical, and electrical properties of the epilayer are comparable with those of layers obtained by conventional growth on polar GaN MOVPE templates deposited on C-plane sapphire. We discuss the utilization of other MX–O4 oxides for growing nitrides.
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68.55.ag Semiconductors
68.55.J- Morphology of films
78.66.Hf II-VI semiconductors
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Electron spin quantum beats and room temperature g factor in GaAsN

H. M. Zhao, L. Lombez, B. L. Liu, B. Q. Sun, Q. K. Xue, D. M. Chen, and X. Marie

Appl. Phys. Lett. 95, 041911 (2009); http://dx.doi.org/10.1063/1.3186076 (3 pages) | Cited 4 times

Online Publication Date: 31 July 2009

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We report on the investigation of electron spin quantum beats at room temperature in GaAsN thin films by time-resolved Kerr rotation technique. The measurement of the quantum beats, which originate from the Larmor precession of electron spins in external transverse magnetic field, yields an accurate determination of the conduction electron g factor. We show that the g factor of GaAs1−xNx thin films is significantly changed by the introduction of a small nitrogen fraction.
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78.47.jm Quantum beats
68.55.ag Semiconductors
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
78.20.Ls Magneto-optical effects
72.25.Dc Spin polarized transport in semiconductors
78.66.Fd III-V semiconductors

Tunability of the piezoelectric fields in strained III-V semiconductors

R. Garg, A. Hüe, V. Haxha, M. A. Migliorato, T. Hammerschmidt, and G. P. Srivastava

Appl. Phys. Lett. 95, 041912 (2009); http://dx.doi.org/10.1063/1.3194779 (3 pages) | Cited 5 times

Online Publication Date: 31 July 2009

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In this work we show that tetragonal strain can be used to create a sign reversal of the piezoelectric field in InAs/GaAs semiconductor heterostructures. The strain dependence of the internal displacement of the cation-anion pairs and of the bond polarity are taken into account, beyond the linear model, within an ab initio scheme. The reported tunability of the piezoelectric field is a concept that can be exploited in optoelectronic devices.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
77.65.Ly Strain-induced piezoelectric fields

Periodic supply of indium as surfactant for N-polar InN growth by plasma-assisted molecular-beam epitaxy

Yong-Zhao Yao, Takashi Sekiguchi, Takeshi Ohgaki, Yutaka Adachi, Naoki Ohashi, Hanako Okuno, and Masaki Takeguchi

Appl. Phys. Lett. 95, 041913 (2009); http://dx.doi.org/10.1063/1.3189262 (3 pages)

Online Publication Date: 31 July 2009

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We have investigated the self-surfactant effect of In for N-polar InN growth by plasma-assisted molecular-beam epitaxy. We found that InN quality was significantly improved if a thin In coverage (about 1.8 ML) was introduced before InN growth. However, this In coverage was slowly consumed during subsequent InN growth under N-rich condition. Periodically restoring In coverage for thick InN growth was proposed to solve this consumption problem. We suggest that the effect of In surfactant is to terminate the surface N dangling bonds and form an In adlayer, under which an efficient diffusion channel for lateral N adatom transport is created.
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68.55.ag Semiconductors
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
66.30.-h Diffusion in solids
52.77.-j Plasma applications
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