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Applied Physics Letters / Volume 95 / Issue 5 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 95, 052107 (2009); http://dx.doi.org/10.1063/1.3194156 (3 pages)

Measurement of the Peltier coefficient of semiconductors by lock-in thermography

Hilmar Straube, Jan-Martin Wagner, and Otwin Breitenstein

Max Planck Institute of Microstructure Physics, Weinberg 2, Halle D-06120, Germany

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(Received 2 July 2009; accepted 13 July 2009; published online 6 August 2009)

Lock-in thermography is applied to image Joule heating and Peltier-type heat transport separately. Images obtained for a multicrystalline silicon solar cell are quantitatively evaluated using an integration method. The results are interpreted in terms of diffusion and electron/hole drag contributions. The approach presented is especially interesting where the thermal contact resistance to the sample is a problem and where versatility with respect to sample geometry is needed. A further advantage of the method is that it does not need any separate power or temperature calibration.

© 2009 American Institute of Physics

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KEYWORDS and PACS

Keywords

diffusion, elemental semiconductors, infrared imaging, Peltier effect, silicon, solar cells, thermal resistance

PACS

  • 07.57.Kp

    Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

  • 85.60.Gz

    Photodetectors (including infrared and CCD detectors)

  • 72.15.Jf

    Thermoelectric and thermomagnetic effects

  • 84.60.Jt

    Photoelectric conversion

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3194156

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    O. Breitenstein and J. -P. Rakotoniaina, J. Appl. Phys. 97, 074905 (2005)JAPIAU000097000007074905000001.

    C. Herring, Phys. Rev. 96, 1163 (1954).

    T. H. Geballe and G. W. Hull, Phys. Rev. 98, 940 (1955).


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