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3 Aug 2009

Volume 95, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 95, 052901 (2009); http://dx.doi.org/10.1063/1.3190518 (3 pages)

Didit Yudistira, Sarah Benchabane, Davide Janner, and Valerio Pruneri
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Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution

David Cooper, Jean-Paul Barnes, Jean-Michel Hartmann, Armand Béché, and Jean-Luc Rouviere

Appl. Phys. Lett. 95, 053501 (2009); http://dx.doi.org/10.1063/1.3196549 (3 pages) | Cited 17 times

Online Publication Date: 7 August 2009

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Strain measurements on strained SiGe specimens have been performed using dark field electron holography. By combining the excellent stability of state-of-the-art electron microscopes with careful specimen preparation we have been able to acquire two-dimensional strain maps of the layers with a spatial resolution of 5 nm, a background noise of 2×10−4, an interference width of 1500 nm, and a field of view of more than 500×500 nm2. We also show that the strain measurements are quantitative to within experimental error.
Show PACS
42.40.My Applications
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
07.10.Pz Instruments for strain, force, and torque
06.60.Ei Sample preparation (including design of sample holders)
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