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3 Aug 2009

Volume 95, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 95, 052901 (2009); http://dx.doi.org/10.1063/1.3190518 (3 pages)

Didit Yudistira, Sarah Benchabane, Davide Janner, and Valerio Pruneri
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Surface acoustic wave generation in ZX-cut LiNbO3 superlattices using coplanar electrodes

Didit Yudistira, Sarah Benchabane, Davide Janner, and Valerio Pruneri

Appl. Phys. Lett. 95, 052901 (2009); http://dx.doi.org/10.1063/1.3190518 (3 pages) | Cited 11 times

Online Publication Date: 3 August 2009

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We report on a configuration to generate surface acoustic waves (SAWs) in acoustic superlattices based on ZX-cut periodically poled lithium niobate. The coplanar electrode configuration allows inducing Rayleigh type SAWs with the elastic energy mainly concentrated in between the electrodes gap and under the crystal surface. With respect to standard interdigitated transducers using the same crystal orientation, the efficiency of the SAW generation in the proposed designs are similar, while, for the same grating period, the resonance frequency that can be achieved is two times larger.
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68.35.Iv Acoustical properties
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
77.22.Ej Polarization and depolarization

Tunneling electroresistance in ferroelectric tunnel junctions with a composite barrier

M. Ye. Zhuravlev, Y. Wang, S. Maekawa, and E. Y. Tsymbal

Appl. Phys. Lett. 95, 052902 (2009); http://dx.doi.org/10.1063/1.3195075 (3 pages) | Cited 13 times

Online Publication Date: 3 August 2009

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Tunneling electroresistance (TER) effect is the change in the electrical resistance of a ferroelectric tunnel junction (FTJ) associated with polarization reversal in the ferroelectric barrier layer. Here we predict that a FTJ with a composite barrier that combines a functional ferroelectric film and a thin layer of a nonpolar dielectric can exhibit a significantly enhanced TER. Due to the change in the electrostatic potential with polarization reversal, the nonpolar dielectric barrier acts as a switch that changes its barrier height from a low to high value. The predicted values of TER are giant and indicate that the resistance of the FTJ can be changed by several orders in magnitude at the coercive electric field of ferroelectric.
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77.80.-e Ferroelectricity and antiferroelectricity
73.40.Gk Tunneling
77.22.Ej Polarization and depolarization
77.84.Lf Composite materials
77.55.-g Dielectric thin films
73.61.-r Electrical properties of specific thin films

Detection of morphotropic phase boundary of (Bi1/2Na1/2)TiO3–Ba(Al1/2Sb1/2)O3 solid-solution ceramics

Yuji Hiruma, Hajime Nagata, and Tadashi Takenaka

Appl. Phys. Lett. 95, 052903 (2009); http://dx.doi.org/10.1063/1.3194146 (3 pages) | Cited 13 times

Online Publication Date: 4 August 2009

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A solid-solution system, (1−x)(Bi1/2Na1/2)TiO3–xBa(Al1/2Sb1/2)O3 (BNT-BAS100x), was fabricated by a conventional ceramic fabrication process. The morphotropic phase boundary (MPB) between rhombohedral and pseudocubic phases of BNT-BAS100x was clarified to be at approximately x = 0.045, and the highest normalized strain d33* of 532 pm/V was obtained at this composition. This study also revealed that the MPB composition of a BNT-based solid solution shifts to a BNT-rich composition as the tolerance factor t of the end member increases, and t of the MPB composition is always approximately 0.983. This indicates that the MPB position can be predicted from t values of the end members.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.20.-n Methods of materials synthesis and materials processing
77.80.B- Phase transitions and Curie point

Increasing permittivity in HfZrO thin films by surface manipulation

T. S. Böscke, P. Y. Hung, P. D. Kirsch, M. A. Quevedo-Lopez, and R. Ramírez-Bon

Appl. Phys. Lett. 95, 052904 (2009); http://dx.doi.org/10.1063/1.3195623 (3 pages) | Cited 9 times

Online Publication Date: 4 August 2009

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We report on the electrical and physical characterization of nanoscale crystalline HfxZr1−xO2 films by x-ray diffraction (XRD) and attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy. Increasing the ZrO2 content generally led to an increase in tetragonal phase fraction and dielectric constant. This was reflected in both XRD and ATR-FTIR measurements. We demonstrate that not only the composition, but also the distribution of ZrO2 throughout the film determines phase formation. Concentrating ZrO2 at the top surface of the film allowed the dielectric constant to be optimized for a given composition. These observations are explained by a surface energy thermodynamic model.
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77.22.Ch Permittivity (dielectric function)
65.40.gp Surface energy
68.35.Md Surface thermodynamics, surface energies
78.30.Hv Other nonmetallic inorganics
78.66.Nk Insulators

Monoclinic MB phase and phase instability in [110] field cooled Pb(Zn1/3Nb2/3)O3–4.5%PbTiO3 single crystals

Jianjun Yao, Hu Cao, Wenwei Ge, Jiefang Li, and D. Viehland

Appl. Phys. Lett. 95, 052905 (2009); http://dx.doi.org/10.1063/1.3200230 (3 pages) | Cited 3 times

Online Publication Date: 5 August 2009

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We report the finding of a monoclinic MB phase in Pb(Zn1/3Nb2/3)O3–4.5%PbTiO3 single crystals. High precision x-ray diffraction investigations of [110] field cooled crystals have shown a transformation sequence of cubic(C)→tetragonal(T)→orthorhombic(O)→monoclinic(MB), which is different from that previously reported [ A.-E. Renault et al., J. Appl. Phys. 97, 044105 (2005) ]. Beginning in the zero-field-cooled condition at 383 K, a rhombohedral (R)→MB→O sequence was observed with increasing field. Coexisting MB and O phases were then found upon removal of field, which fully transformed to MB on cooling to room temperature.
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77.80.B- Phase transitions and Curie point
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.66.Fn Inorganic compounds

Resonant photoionization of defects in Si/SiO2/HfO2 film stacks observed by second-harmonic generation

J. Price, Y. Q. An, P. S. Lysaght, G. Bersuker, and M. C. Downer

Appl. Phys. Lett. 95, 052906 (2009); http://dx.doi.org/10.1063/1.3202392 (3 pages) | Cited 6 times

Online Publication Date: 6 August 2009

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Internal multiphoton photoemission (IMPE) and time-dependent electrostatic field-induced second-harmonic (TD-EFISH) generation are used to probe charge trapping kinetics in Si/SiO2/Hf1−xSixO2 films. For as-deposited Si/SiO2/HfO2 samples, we observe a unique resonant TD-EFISH response to IMPE charging at incident photon energies near 1.6 eV: a delayed TD-EFISH decay not observed at off resonant energies or in x ≠ 0 samples. We explain the TD-EFISH decay by resonant two-photon ionization of point defects and subsequent tunneling of the photoelectrons to the Si substrate. Hysteresis in the resonant TD-EFISH response shows that the photoionized defects are rechargeable and located within the HfO2 bulk.
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77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
79.60.-i Photoemission and photoelectron spectra
78.47.N- High resolution nonlinear optical spectroscopy
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Changing the dielectric properties of BaTiO3 filled poly(phenylene oxide) composites by control of their structure

Yong Kyun Jang, Jong Chan Won, and Ho Gyu Yoon

Appl. Phys. Lett. 95, 052907 (2009); http://dx.doi.org/10.1063/1.3194155 (3 pages) | Cited 2 times

Online Publication Date: 7 August 2009

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The dielectric properties of BaTiO3 (BT) filled poly(phenylene oxide) (PPO) composites are investigated according to their structure, which is modified by filling the matrix with PPO-encapsulated BT particles and forming the semi-interpenetrating polymer network with triallyl isocyanurate (TAIC). Polymer encapsulation is most effective in lowering the permittivity and tan δ of the composite by suppressing the interface polarization. The copolymerization effect of TAIC is ignorable for a low dielectric matrix such as PPO. However, the dielectric values of the composites with low molecular weight-sized PPO, as the matrix, are decreased significantly by TAIC due to the constrained orientation polarization of the matrix.
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77.22.Ch Permittivity (dielectric function)
82.35.-x Polymers: properties; reactions; polymerization
61.41.+e Polymers, elastomers, and plastics
77.22.Ej Polarization and depolarization

Low temperature preparation of ferroelectric bismuth titanate thin films

Kan-Hao Xue, Jolanta Celinska, and Carlos A. Paz de Araujo

Appl. Phys. Lett. 95, 052908 (2009); http://dx.doi.org/10.1063/1.3204002 (3 pages) | Cited 6 times

Online Publication Date: 7 August 2009

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The low temperature metal organic decomposition techniques of ferroelectric bismuth titanate (BIT) thin films were investigated. BIT was found to be crystallized by rapid thermal processing at 450 °C. The stoichiometric Bi4Ti3O12 sample exhibited (117) orientation, while the Bi4.8Ti3O13.2 sample, with 20% excess bismuth, possessed a/b axes orientation with (117) component. Pt/Bi4.8Ti3O13.2/Pt ferroelectric capacitors were fabricated with temperature confined below 450 °C. The saturated 2Pr value was 31.1 μC/cm2. Such method is valuable for ferroelectric memories at 65 nm technology node and beyond because low temperature processes are required for the stability of interconnect material nickel silicide.
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77.55.-g Dielectric thin films
81.65.-b Surface treatments
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
77.80.Dj Domain structure; hysteresis
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