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3 Aug 2009

Volume 95, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 95, 052901 (2009); http://dx.doi.org/10.1063/1.3190518 (3 pages)

Didit Yudistira, Sarah Benchabane, Davide Janner, and Valerio Pruneri
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Ultrafast pulse characterization using cross phase modulation in silicon

En-Kuang Tien, Xing-Zhu Sang, Feng Qing, Qi Song, and Ozdal Boyraz

Appl. Phys. Lett. 95, 051101 (2009); http://dx.doi.org/10.1063/1.3193538 (3 pages) | Cited 7 times

Online Publication Date: 3 August 2009

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Based on the high nonlinearity of the chip-scale silicon waveguide with small dispersion, a compact frequency-resolved optical gating system has been demonstrated using cross phase modulation for ultrafast pulse characterization. The principal component generalized projections algorithm is used to retrieve the amplitude and phase from the spectrogram. Amplitude and phase of a 540 fs pulse have been measured. The measured amplitude result is confirmed by the autocorrelation measurement.
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42.65.Wi Nonlinear waveguides
42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators

Strain-induced nitrogen incorporation in atomic layer epitaxy growth of InAsN/GaAs quantum wells using metal organic chemical vapor deposition

Asaf Albo, Catherine Cytermann, Gad Bahir, and Dan Fekete

Appl. Phys. Lett. 95, 051102 (2009); http://dx.doi.org/10.1063/1.3193663 (3 pages) | Cited 3 times

Online Publication Date: 4 August 2009

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We report on the growth of high-quality high-indium-content (Ga)InAsN/GaAs quantum wells grown using low-pressure metal organic chemical vapor deposition. The growth was performed employing a strain-controlled atomic layer epitaxy technique. We verified experimentally that the strain enables the incorporation of nitrogen atoms during the atomic layer epitaxy growth of InAsN monolayers on GaAs. Photoluminescence and secondary ion mass spectroscopy measurements indicate that about 2.5% of the nitrogen was incorporated in the grown layers. Utilizing this strain-controlled atomic layer epitaxy technique, we designed and demonstrated highly strained InAsN/GaAs short-period superlattice structure suitable for applications in optical communication.
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68.55.ag Semiconductors
68.65.Fg Quantum wells
78.67.De Quantum wells
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Cr III-V semiconductors
68.65.Cd Superlattices
81.07.St Quantum wells

Micrometric spatial control of rare earth ion emission in LiNbO3: A two-dimensional multicolor array

P. Molina, M. O. Ramírez, J. V. García-Santizo, S. Álvarez-García, R. Pazik, W. Strek, P. J. Dereń, and L. E. Bausá

Appl. Phys. Lett. 95, 051103 (2009); http://dx.doi.org/10.1063/1.3190502 (3 pages) | Cited 2 times

Online Publication Date: 4 August 2009

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We report on the preparation and optical characterization of a two-dimensional multicolor emission arrangement obtained by embedding high refractive-index Er3+ doped CaTiO3 nanoparticles into a Nd3+ doped LiNbO3 crystal substrate prepatterned with an array of microvoids. By controlling the spatial location of the rare earth ions at the micrometer scale, we show the possibility of simultaneous spatial and spectral control of the spontaneous emission in a two-dimensional rare earth optically activated array. The results can be useful for the development of microcomposite rare earth based photonic devices, such as multicolor emission displays or pixelated color structures.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.72.up Other materials
61.72.Qq Microscopic defects (voids, inclusions, etc.)
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Hx Other solid inorganic materials

Burn-in mechanism of 450 nm InGaN ridge laser test structures

Jens Müller, Georg Brüderl, Marc Schillgalies, Sönke Tautz, Dimitri Dini, Andreas Breidenassel, Bastian Galler, and Stephan Lutgen

Appl. Phys. Lett. 95, 051104 (2009); http://dx.doi.org/10.1063/1.3194139 (3 pages) | Cited 9 times

Online Publication Date: 5 August 2009

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We investigated the short term stability of the optical output power of 450 nm InGaN test lasers. The short term degradation strongly depended on ridge width. It was mainly caused by an increase in threshold current. From measurements of subthreshold wave-length blueshift, carrier lifetime, and output power, we found a decrease in carrier density after 15 h of aging. We show a direct correlation of the short term aging with current spreading effects.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers

Fabry–Pérot nanocavities in multilayered plasmonic crystals for enhanced biosensing

Alp Artar, Ahmet Ali Yanik, and Hatice Altug

Appl. Phys. Lett. 95, 051105 (2009); http://dx.doi.org/10.1063/1.3202391 (3 pages) | Cited 17 times

Online Publication Date: 6 August 2009

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We have demonstrated extraordinary light transmission effect through Fabry–Pérot cavities in multilayered plasmonic crystals formed by coupling two physically separated metallic nanohole and nanodisk array layers. Superior field-medium overlap is observed with Fabry–Pérot resonances as a result of stronger electromagnetic field confinement in the dielectric region far from the metallic surfaces. We show that these cavity resonances are highly sensitive to refractive index changes. The large field-material overlap combined with simple fabrication scheme used here makes these structures an ideal candidate for biosensing applications.
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07.60.-j Optical instruments and equipment
87.80.-y Biophysical techniques (research methods)

Effect of defect saturation on terahertz emission and detection properties of low temperature GaAs photoconductive switches

Samir Rihani, Richard Faulks, Harvey Beere, Hideaki Page, Ian Gregory, Michael Evans, David A. Ritchie, and Michael Pepper

Appl. Phys. Lett. 95, 051106 (2009); http://dx.doi.org/10.1063/1.3193680 (3 pages) | Cited 4 times

Online Publication Date: 6 August 2009

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We present a study into the properties of terahertz (THz) emission and detection using low temperature grown GaAs photoconductive switches over a range of ex situ anneal temperatures. Our analysis focuses on the effect of defect saturation, which has been confirmed in many experiments. However its effect on the THz emission and detection has so far not been fully investigated. In this letter, we examine the dependence of the radiated THz pulse width (full width at half maximum) upon optical power, and show that the differences in the characteristics with annealing can be theoretically accounted for when defect saturation is taken into account. Defect saturation was found to substantially increase the trapping time of photoexcited electrons, which in turn can cause THz pulse broadening at high optical powers. This effect was found to increase with anneal temperature due to the decrease in defect density. The radiated peak THz amplitude from emitters increases monotonically with increasing optical power across the range of anneal temperatures investigated. In the detector configuration, however, the detected peak THz amplitude reaches a maximum before starting to decrease with increasing optical power. The latter trend was observed for devices annealed at temperatures higher than 300 °C and is attributed to the onset of defect saturation.
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85.60.-q Optoelectronic devices
61.72.Cc Kinetics of defect formation and annealing

Dynamics of microbubble generation and trapping by self-focused femtosecond laser pulses

Kun Yang, Yun Zhou, Qiushi Ren, Jing Yong Ye, and Cheri X. Deng

Appl. Phys. Lett. 95, 051107 (2009); http://dx.doi.org/10.1063/1.3187535 (3 pages) | Cited 4 times

Online Publication Date: 6 August 2009

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Different from conventional optical tweezers used for trapping high refractive index micron-sized particles, bubble generation and trapping by femtosecond laser offer a unique strategy to manipulate microbubbles. Using high frequency ultrasound imaging and fast-frame optical video microscopy, we obtained results revealing the spatiotemporal characteristics of bubble generation and trapping by self-focused femtosecond laser pulses at multiple locations along the laser beam. We detected distinct acoustic signals associated with the laser focus and measured the trapping force by using acoustic radiation force to detrap the bubble from the laser beam.
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47.55.db Drop and bubble formation
47.55.dd Bubble dynamics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.50.Wk Mechanical effects of light on material media, microstructures and particles
47.80.Jk Flow visualization and imaging

Spontaneous formation of a polariton condensate in a planar GaAs microcavity

Esther Wertz, Lydie Ferrier, Dmitry D. Solnyshkov, Pascale Senellart, Daniele Bajoni, Audrey Miard, Aristide Lemaître, Guillaume Malpuech, and Jacqueline Bloch

Appl. Phys. Lett. 95, 051108 (2009); http://dx.doi.org/10.1063/1.3192408 (3 pages) | Cited 24 times

Online Publication Date: 7 August 2009

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We report on polariton condensation in a planar GaAs microcavity under nonresonant optical excitation. Angularly resolved photoluminescence measurements demonstrate polariton condensation for temperature up to 40 K. Numerical simulations using Boltzmann equations give an overall description of the observed condensation for various detunings and temperatures. This model highlights the importance of the polariton relaxation rate as compared to the polariton decay for condensation to occur on the lowest energy polariton states.
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81.05.Ea III-V semiconductors
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
78.55.Cr III-V semiconductors
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