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10 Aug 2009

Volume 95, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 95, 062501 (2009); http://dx.doi.org/10.1063/1.3200226 (3 pages)

O. Vávra, W. Pfaff, and Ch. Strunk
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Nanoscale oxygen octahedral tilting in 0.90(Bi1/2Na1/2)TiO3–0.05(Bi1/2K1/2)TiO3–0.05BaTiO3 lead-free perovskite piezoelectric ceramics

Cheuk W. Tai (戴卓偉) and Y. Lereah

Appl. Phys. Lett. 95, 062901 (2009); http://dx.doi.org/10.1063/1.3193544 (3 pages) | Cited 18 times

Online Publication Date: 10 August 2009

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The oxygen octahedral tilted domains in 0.90(Bi1/2Na1/2)TiO3–0.5(Bi1/2K1/2)TiO3–0.5BaTiO3 lead-free perovskite piezoelectric ceramic have been studied by transmission electron microscopy (TEM). Selected-area electron diffraction patterns shows the ½ooo and ½ooe reflections, indicating the presence of antiphase (a−a−a−) and in-phase (aoaoc+) octahedral tilting, respectively. The morphology and distributions of these tilted domains are shown in the centered dark-field images. Further, the Bragg-filtered high-resolution TEM image reveals that the size of the in-phase tilted domains varies from 1 to 8 nm across. The ceramic contains the mixture of nontilted and variants of the antiphase and in-phase tilted domains.
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77.65.Bn Piezoelectric and electrostrictive constants
77.80.Dj Domain structure; hysteresis
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization

Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation

G. Niu, G. Saint-Girons, B. Vilquin, G. Delhaye, J.-L. Maurice, C. Botella, Y. Robach, and G. Hollinger

Appl. Phys. Lett. 95, 062902 (2009); http://dx.doi.org/10.1063/1.3193548 (3 pages) | Cited 17 times

Online Publication Date: 10 August 2009

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The molecular beam epitaxy of SrTiO3 (STO) layers on Si (001) is studied, focusing on the early stages of the growth and on the strain relaxation process. Evidence is given that even for optimized growth conditions, STO grows initially amorphous on silicon and recrystallizes, leading to the formation of an atomically abrupt heterointerface with silicon. Just after recrystallization, STO is partially strained. Further increase in its thickness leads to the onset of a progressive plastic relaxation mechanism. STO recovers its bulk lattice parameter for thicknesses of the order of 30 ML.
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68.55.at Other materials
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.40.Lm Deformation, plasticity, and creep
62.20.fq Plasticity and superplasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Dielectric response of high permittivity polymer ceramic composite with low loss tangent

G. Subodh, V. Deepu, P. Mohanan, and M. T. Sebastian

Appl. Phys. Lett. 95, 062903 (2009); http://dx.doi.org/10.1063/1.3200244 (3 pages) | Cited 13 times

Online Publication Date: 10 August 2009

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The present communication investigates the dielectric response of the Sr9Ce2Ti12O36 ceramics loaded high density polyethylene and epoxy resin. Sr9Ce2Ti12O36 ceramic filled polyethylene and epoxy composites were prepared using hot blending and mechanical mixing, respectively. 40 vol % ceramic loaded polyethylene has relative permittivity of 12.1 and loss tangent of 0.004 at 8 GHz, whereas the corresponding composite using epoxy as matrix has permittivity and loss tangent of 14.1 and 0.022, respectively. The effective medium theory fits relatively well for the observed permittivity of these composites.
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77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Mh Cermets, ceramic and refractory composites
81.05.Qk Reinforced polymers and polymer-based composites

High dielectric permittivity in semiconducting Pr0.6Ca0.4MnO3 filled polyvinylidene fluoride nanocomposites with low percolation threshold

K. Devi Chandrasekhar, A. Venimadhav, and A. K. Das

Appl. Phys. Lett. 95, 062904 (2009); http://dx.doi.org/10.1063/1.3196550 (3 pages) | Cited 6 times

Online Publication Date: 10 August 2009

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Semiconducting Pr0.6Ca0.4MnO3 nanoparticles with width of ∼ 50 nm and length ∼ 80–150 nm were prepared by sol-gel method. The dielectric behavior of Pr0.6Ca0.4MnO3, polyvinylidene fluoride composites was investigated by varying the Pr0.6Ca0.4MnO3 volume fraction and frequency. The percolation threshold of the composites was found to be 0.1 and an enhanced effective dielectric permittivity of ∼ 700 with low dielectric loss of ∼ 0.3 at 103 Hz near the percolation threshold was observed. The low percolation threshold was attributed to the nanosize and nonspherical shape of the filler particles, and the enhanced dielectric properties have been explained by using boundary layer capacitance effect and percolation theory.
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81.16.-c Methods of micro- and nanofabrication and processing
81.07.-b Nanoscale materials and structures: fabrication and characterization
77.22.Gm Dielectric loss and relaxation
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.63.-b Electronic transport in nanoscale materials and structures
77.22.Ch Permittivity (dielectric function)

Non-180° domains in LiTaO3 thin films deposited by metal organic chemical vapor deposition

Z. B. He, N. Setter, T. Ono, and K. Shinozaki

Appl. Phys. Lett. 95, 062905 (2009); http://dx.doi.org/10.1063/1.3204451 (3 pages) | Cited 2 times

Online Publication Date: 13 August 2009

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Epitaxial lithium tantalate (LiTaO3) thin films were grown on the hexagonal plane of sapphire substrates by metal organic chemical vapor deposition. Two crystallographic variants, related to each other by 180° rotation around the c axis, as well as non-180° domains were determined by transmission electron microscopy from cross-sectional samples of these films. A structural model for the non-180° domain is proposed and the possible formation mechanisms are discussed.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.37.Og High-resolution transmission electron microscopy (HRTEM)
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.aj Insulators

The effect of SrTiO3 substrate orientation on the surface morphology and ferroelectric properties of pulsed laser deposited NaNbO3 films

Seiji Yamazoe, Hiroyuki Sakurai, Masaki Fukada, Hideaki Adachi, and Takahiro Wada

Appl. Phys. Lett. 95, 062906 (2009); http://dx.doi.org/10.1063/1.3205103 (3 pages) | Cited 11 times

Online Publication Date: 14 August 2009

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Orientated NaNbO3 (NN) films were grown on SrRuO3/(001)SrTiO3 [SRO/(001)STO], SRO/(110)STO, and SRO/(111)STO substrates by pulsed laser deposition. Scanning electron microscopy images showed that the surface morphologies of the NN/SRO/(001)STO, NN/SRO/(110)STO, and NN/SRO/(111)STO took the form of a stepped structure, a striped pattern, and trigonal pyramidal-like structures, respectively. The dielectric and ferroelectric properties of the films were characterized. The NN/SRO/(110)STO film showed the lowest relative dielectric constant and the largest remanent polarization of 30.8 μC/cm2 among all films. These were interpreted as being due to the orientation direction of the NN film grown on (110)STO being parallel to the polarization direction of NN.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ch Permittivity (dielectric function)
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Fg Pulsed laser ablation deposition

On the strain coupling across vertical interfaces of switchable BiFeO3–CoFe2O4 multiferroic nanostructures

N. Dix, R. Muralidharan, J. Guyonnet, B. Warot-Fonrose, M. Varela, P. Paruch, F. Sánchez, and J. Fontcuberta

Appl. Phys. Lett. 95, 062907 (2009); http://dx.doi.org/10.1063/1.3204464 (3 pages) | Cited 11 times

Online Publication Date: 14 August 2009

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In magnetoelectrically coupled CoFe2O4–BiFeO3 nanostructures vertical and lateral lattice parameters of both phases are determined. We find that the in-plane lattice parameter of CoFe2O4 is fully relaxed whereas it presents compressive strain along the out-of-plane direction. Although the CoFe2O4–BiFeO3 interface is semicoherent, CoFe2O4 out-of-plane lattice strain is not relaxed after selective removal of the matrix and thus it is of nonelastic origin. In spite of the absence of elastic residual strain caused by CoFe2O4–BiFeO3 interfaces, the two phases are mechanically coupled as demonstrated by the electrical switching of the magnetization.
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68.35.Gy Mechanical properties; surface strains
68.35.Ct Interface structure and roughness
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
61.46.-w Structure of nanoscale materials

Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition

Roman Engel-Herbert, Yoontae Hwang, Joël Cagnon, and Susanne Stemmer

Appl. Phys. Lett. 95, 062908 (2009); http://dx.doi.org/10.1063/1.3204465 (3 pages) | Cited 21 times

Online Publication Date: 14 August 2009

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Zirconium oxide films were grown by chemical beam deposition with zirconium tert-butoxide as the source on (2×4) reconstructed, n-type In0.53Ga0.47As surfaces obtained after As decapping. Optimized growth conditions yielded ZrO2/In0.53Ga0.47As interfaces that were free of second phases. Capacitance-voltage (CV) measurements with different top electrodes showed a frequency dispersion of less than 2% per decade in accumulation. The accumulation capacitance and horizontal position of the CV curve were independent of temperature, while the inversion capacitance was strongly temperature dependent. Flat band voltages correlated with the work function of the metal electrode.
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84.32.Tt Capacitors
82.45.Un Dielectric materials in electrochemistry

Photovoltaic effects in BiFeO3

S. Y. Yang, L. W. Martin, S. J. Byrnes, T. E. Conry, S. R. Basu, D. Paran, L. Reichertz, J. Ihlefeld, C. Adamo, A. Melville, Y.-H. Chu, C.-H. Yang, J. L. Musfeldt, D. G. Schlom, J. W. Ager, III, et al.

Appl. Phys. Lett. 95, 062909 (2009); http://dx.doi.org/10.1063/1.3204695 (3 pages) | Cited 52 times

Online Publication Date: 14 August 2009

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We report a photovoltaic effect in ferroelectric BiFeO3 thin films. The all-oxide heterostructures with SrRuO3 bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages ∼ 0.8–0.9 V and external quantum efficiencies up to ∼ 10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO3/tin doped indium oxide interface.
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73.50.Pz Photoconduction and photovoltaic effects
77.55.-g Dielectric thin films
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