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17 Aug 2009

Volume 95, Issue 7, Articles (07xxxx)

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Appl. Phys. Lett. 95, 073703 (2009); http://dx.doi.org/10.1063/1.3152768 (3 pages)

Mohammud R. Noor, Swati Goyal, Shawn M. Christensen, and Samir M. Iqbal
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Suppression of the current leakage in charge ordered Lu2Fe2Fe1−xMnxO7 (0<x ≤ 0.86)

Y. B. Qin, H. X. Yang, Y. Zhang, H. F. Tian, C. Ma, L. J. Zeng, and J. Q. Li

Appl. Phys. Lett. 95, 072901 (2009); http://dx.doi.org/10.1063/1.3207751 (3 pages) | Cited 6 times

Online Publication Date: 17 August 2009

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The ferroelectricity, magnetic properties, and charge-ordering modulations in the layered Lu2Fe2Fe1−xMnxO7 have been investigated for x ranging from 0 to 0.86. Experimental measurements reveal that substitution of Mn for Fe could evidently influence the low temperature magnetic transition. Moreover, ferroelectric analysis suggests that introduction of Mn ions in this layered system can efficiently suppress the conducting leakage and result in clear hysteresis loops in the polarization–electric field switching curves. The charge ordering states in Lu2Fe2Fe1−xMnxO7 characterized by two incommensurate modulations has been observed and discussed in association with the local spontaneous polarizations.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
77.80.Dj Domain structure; hysteresis
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

dc field effect on stability of piezoelectric PZN-0.06PT single crystals under compressive stress

Chiaki Okawara and Ahmed Amin

Appl. Phys. Lett. 95, 072902 (2009); http://dx.doi.org/10.1063/1.3193547 (3 pages) | Cited 10 times

Online Publication Date: 19 August 2009

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A reversible elastic instability was observed in PZN-0.06PT high coupling single crystals when subjected to uniaxial compressions similar to those used in sound projectors. The strain magnitude at the onset of the instability supported a free energy prediction of a ferroelectric rhombohedral (FR)-ferroelectric orthorhombic (FO) phase transition. The thermal response of the normalized phase transition strain is in a good agreement with model calculation. A dc bias field drastically enhanced the crystal stability under compression. dc bias and compressive stress levels that are required for their stable operation in sound projectors have been deduced and will be presented.
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77.80.B- Phase transitions and Curie point
77.65.-j Piezoelectricity and electromechanical effects
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
65.40.G- Other thermodynamical quantities
81.40.Jj Elasticity and anelasticity, stress-strain relations

High resolution photoemission study of SiOx/Si(111) interface disruption following in situ HfO2 deposition

Stephen McDonnell, Barry Brennan, and Greg Hughes

Appl. Phys. Lett. 95, 072903 (2009); http://dx.doi.org/10.1063/1.3210794 (3 pages) | Cited 4 times

Online Publication Date: 20 August 2009

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We report on an in situ high resolution core level photoemission study of the early stages of interface formation between an ultrathin SiOx layer ( ∼ 0.3 nm) grown on the atomically clean Si(111) surface and a HfO2 dielectric layer. Si 2p core level spectra acquired at 130 eV photon energy reveal evidence of a chemically shifted component on the lower binding energy side of the substrate peak which is attributed to interface defect states resulting from the incorporation of silicon atoms from the substrate into the interfacial oxide at room temperature. This evidence of Si/SiOx interface disruption would be expected to increase charge carrier scattering mechanisms in the silicon and contribute to the generally observed mobility degradation in high-k stacks with ultrathin silicon oxide interface layers.
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79.60.Jv Interfaces; heterostructures; nanostructures
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ng Insulators
73.50.Dn Low-field transport and mobility; piezoresistance
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
77.55.-g Dielectric thin films

Observation of dielectric dispersion of BaTiO3 ceramics in the gigahertz frequency region by scattering parameter measurement using a pair of surface electrodes

A. Nakayama and H. Yoshikawa

Appl. Phys. Lett. 95, 072904 (2009); http://dx.doi.org/10.1063/1.3207831 (3 pages) | Cited 4 times

Online Publication Date: 20 August 2009

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A measurement method is proposed for observing dielectric dispersion of ferroelectric ceramics in the gigahertz region. This method is based on scattering parameter (S11) measurements using a pair of electrodes. Using this method, relaxation-type dielectric dispersion of BaTiO3 ceramics is observed in the range from 100 MHz to 20 GHz. The relaxation frequency shifts to lower frequencies with larger grain size. In coarse-grain BaTiO3 ceramics, two peaks of the imaginary part of permittivity are observed, depending on the amount of time after thermal treatment. The contribution of the ferroelectric domain and ionic vibration to the dielectric dispersion is discussed.
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77.22.Ch Permittivity (dielectric function)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.40.Gh Other heat and thermomechanical treatments
77.80.Dj Domain structure; hysteresis
77.22.Gm Dielectric loss and relaxation
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