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24 Aug 2009

Volume 95, Issue 8, Articles (08xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 082507 (2009); http://dx.doi.org/10.1063/1.3186782 (3 pages)

Sang-Koog Kim, Ki-Suk Lee, and Dong-Soo Han
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Free alignment defect, low driving voltage of half-V ferroelectric liquid crystal device

Huang-Ming P. Chen and Chi-Wen Lin

Appl. Phys. Lett. 95, 083501 (2009); http://dx.doi.org/10.1063/1.3211108 (3 pages) | Cited 3 times

Online Publication Date: 25 August 2009

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The horizontal chevron alignment defect in half-V mode ferroelectric liquid crystal (FLC) cell can be reduced by asymmetrical alignment hybrid cell. The low free energy level generated from the interaction between spontaneous polarization and opposite polar alignment surfaces was found. As a result, uniformly aligned FLC cell can be achieved without applied external voltage. The R3206 FLC material is applied as model compound. The contrast ratio of R3206–70 is greatly enhanced from 76 to 780 with 1.0 ms response time under 5 V.
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42.79.Kr Display devices, liquid-crystal devices

Characterization of current injection mechanism in Schottky-barrier metal-oxide-semiconductor field-effect transistors

Sung-Jin Choi, Jin-Woo Han, Moongyu Jang, Cheljong Choi, and Yang-Kyu Choi

Appl. Phys. Lett. 95, 083502 (2009); http://dx.doi.org/10.1063/1.3204439 (3 pages)

Online Publication Date: 25 August 2009

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We discuss the carrier injection mechanism from source/drain to a channel in the on/off-state of Schottky-barrier silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor by developing a refined extraction method for estimation of the Schottky-barrier height. This method is applied to validate the suggested mechanism by utilizing the dummy-gate in an underlap device with a thicker spacer and applying back-gate bias to SOI wafer. The results clearly show that the tunneled carriers from the drain side drive the off-state leakage current. In contrast with the conventional leakage path, the leakage current flows along the interfacial surface of the channel rather than a path underneath the channel.
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85.30.Tv Field effect devices

Thermoelectric power generator module of 16×16 Bi2Te3 and 0.6% ErAs:(InGaAs)1−x(InAlAs)x segmented elements

Gehong Zeng, Je-Hyeong Bahk, John E. Bowers, Hong Lu, Arthur C. Gossard, Suzanne L. Singer, Arun Majumdar, Zhixi Bian, Mona Zebarjadi, and Ali Shakouri

Appl. Phys. Lett. 95, 083503 (2009); http://dx.doi.org/10.1063/1.3213347 (3 pages) | Cited 17 times

Online Publication Date: 26 August 2009

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We report the fabrication and characterization of thermoelectric power generator modules of 16×16 segmented elements consisting of 0.8 mm thick Bi2Te3 and 50 μm thick ErAs:(InGaAs)1−x(InAlAs)x with 0.6% ErAs by volume. An output power up to 6.3 W was measured when the heat source temperature was at 610 K. The thermoelectric properties of (InGaAs)1−x(InAlAs)x were characterized from 300 up to 830 K. The finite element modeling shows that the performance of the generator modules can further be enhanced by improving the thermoelectric properties of the element materials, and reducing the electrical and thermal parasitic losses.
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72.20.Pa Thermoelectric and thermomagnetic effects
73.50.Lw Thermoelectric effects
81.07.Bc Nanocrystalline materials
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
66.70.Df Metals, alloys, and semiconductors

Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes

Z. T. Chen, Y. Sakai, J. C. Zhang, T. Egawa, J. J. Wu, H. Miyake, and K. Hiramatsu

Appl. Phys. Lett. 95, 083504 (2009); http://dx.doi.org/10.1063/1.3213562 (3 pages) | Cited 7 times

Online Publication Date: 27 August 2009

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A series of InxAl1−xN-based Schottky solar-blind photodiodes are fabricated on the InxAl1−xN epilayers with high and very close crystal qualities. The quantum efficiency varies from 14.5% to 68.5%. The microstructure and strain state of epilayers are investigated in detail. It is found that the quantum efficiency of photodiode depends on the strain state in InxAl1−xN films. This indicates that adjusting the strain state in InxAl1−xN film is one of the promising approaches to optimize the performance of InAlN-based solar-blind photodiode.
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85.60.Dw Photodiodes; phototransistors; photoresistors
81.05.Ea III-V semiconductors

Analytic twist angle measurement in liquid crystal cells

Chang-Hun Lee, P. Salter, E. P. Raynes, and S. J. Elston

Appl. Phys. Lett. 95, 083505 (2009); http://dx.doi.org/10.1063/1.3207759 (3 pages)

Online Publication Date: 27 August 2009

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Previously we have described a method to measure residual twist angle in homogeneously aligned liquid crystal cells by comparing experimental results with simulated data in an electric field. This allows determination of a small twist angle to an accuracy of 0.02°. In this paper, an analytic method is described whereby it is possible to determine the small twist angle directly from the measured transmission without simulation. A simple equation for the twist angle independent of any material parameters is derived and its reliability and accuracy confirmed by comparison with the results of the previous method.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

A three-terminal spin-torque-driven magnetic switch

J. Z. Sun, M. C. Gaidis, E. J. O’Sullivan, E. A. Joseph, G. Hu, D. W. Abraham, J. J. Nowak, P. L. Trouilloud, Yu Lu, S. L. Brown, D. C. Worledge, and W. J. Gallagher

Appl. Phys. Lett. 95, 083506 (2009); http://dx.doi.org/10.1063/1.3216851 (3 pages) | Cited 17 times

Online Publication Date: 28 August 2009

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A three-terminal spin-torque-driven magnetic switch is experimentally demonstrated. The device uses nonlocal spin current and spin accumulation as the main mechanism for current-driven magnetic switching. It separates the current-induced write operation from that of a magnetic tunnel junction based read. The write current only passes through metallic structures, improving device reliability. The device structure makes efficient use of lithography capabilities, important for robust process integration.
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85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
75.60.-d Domain effects, magnetization curves, and hysteresis
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
85.40.Hp Lithography, masks and pattern transfer

An in-plane, variable optical attenuator using a fluid-based tunable reflective interface

Michael Ian Lapsley, Sz-Chin Steven Lin, Xiaole Mao, and Tony Jun Huang

Appl. Phys. Lett. 95, 083507 (2009); http://dx.doi.org/10.1063/1.3213348 (3 pages) | Cited 11 times

Online Publication Date: 28 August 2009

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We introduce an optofluidic based variable optical attenuator with high stability, high reliability, simple and inexpensive fabrication, and an attenuation performance comparable to commercial devices. A standard soft lithography process produces a single-layered polydimethylsiloxane (PDMS) microfluidic device integrated with optical fibers. By altering the refractive index of the fluid within the microchannel, we can control the reflectivity of the fluid/PDMS interface and thus achieve variable attenuation. Theoretical calculations are conducted based on Snell’s law of refraction and the Fresnel equations of reflection, and the calculated attenuation response matches well with experimental data.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.81.-i Fiber optics
42.82.-m Integrated optics
42.82.Cr Fabrication techniques; lithography, pattern transfer
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
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