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24 Aug 2009

Volume 95, Issue 8, Articles (08xxxx)

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Appl. Phys. Lett. 95, 082507 (2009); http://dx.doi.org/10.1063/1.3186782 (3 pages)

Sang-Koog Kim, Ki-Suk Lee, and Dong-Soo Han
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Multiferroic properties of layer-structured Bi5Fe0.5Co0.5Ti3O15 ceramics

Xiangyu Mao, Wei Wang, Xiaobing Chen, and Yalin Lu

Appl. Phys. Lett. 95, 082901 (2009); http://dx.doi.org/10.1063/1.3213344 (3 pages) | Cited 32 times

Online Publication Date: 25 August 2009

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Layer-structured, single phase Bi5Fe0.5Co0.5Ti3O15 ceramics was synthesized following a multicalcination procedure. Magnetic moment increases more than three times by substituting half Fe sites by Co ions. The material exhibits an Aurivillius phase with a four-layer unit cell structure, and presents a remarkable coexistence of ferroelectricity and ferromagnetism above room temperature. The measured 2Pr and 2Mr are 13 μC/cm2 and 7.8 memu/g, respectively. The material’s magnetic behavior below 275 °C is relaxationlike and its magnetic Curie temperature is ∼ 345 °C.
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75.80.+q Magnetomechanical effects, magnetostriction
77.80.-e Ferroelectricity and antiferroelectricity
75.30.Cr Saturation moments and magnetic susceptibilities
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

Electrical properties of ZnO–BaTiO3–ZnO heterostructures with asymmetric interface charge distribution

V. M. Voora, T. Hofmann, M. Brandt, M. Lorenz, N. Ashkenov, M. Grundmann, and M. Schubert

Appl. Phys. Lett. 95, 082902 (2009); http://dx.doi.org/10.1063/1.3211914 (3 pages) | Cited 10 times

Online Publication Date: 25 August 2009

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We report on capacitance-voltage, current-voltage, Sawyer–Tower, and transient current switching measurements for a ZnO–BaTiO3–ZnO heterostructure deposited on (001) silicon by using pulsed laser deposition. The triple-layer structure reveals asymmetric capacitance- and current-voltage hysteresis and cycling-voltage dependent Sawyer–Tower polarization drift. We explain our findings by coupling of the ferroelectric (BaTiO3) and piezoelectric (ZnO) interface charges and parallel polarization orientation of the ZnO layers causing asymmetric space charge region formation under positive and negative bias. The transient current characteristics suggest use of this structure as nonvolatile memory device.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization

Left-handed behavior of strontium-doped lanthanum manganite in the millimeter waveband

M. K. Khodzitsky, T. V. Kalmykova, S. I. Tarapov, D. P. Belozorov, A. M. Pogorily, A. I. Tovstolytkin, A. G. Belous, and S. A. Solopan

Appl. Phys. Lett. 95, 082903 (2009); http://dx.doi.org/10.1063/1.3204004 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2009

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Left-handed behavior of strontium-doped lanthanum manganite was revealed in the millimeter waveband. The bulk specimen of La1−xSrxMnO3, was used as a boundary medium for one-dimensional photonic crystal. In the absence of magnetic field known Tamm peak appears in the forbidden zone of photonic crystal indicating that manganite is a single negative medium (negative permittivity). In the presence of external magnetic field somewhat above frequency of ferromagnetic resonance the additional (field sensitive) transparency peak appears in photonic crystal forbidden zone, indicating that manganite becomes double negative medium (negative permittivity and permeability). Model theoretical calculations corroborate the experimental findings.
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78.70.Gq Microwave and radio-frequency interactions
77.22.Ch Permittivity (dielectric function)
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
42.70.Qs Photonic bandgap materials

Second harmonic generation microscopic observations of a multiferroic BiFeO3 single crystal

Hiroko Yokota, Raphael Haumont, Jean-Michel Kiat, Hiroto Matsuura, and Yoshiaki Uesu

Appl. Phys. Lett. 95, 082904 (2009); http://dx.doi.org/10.1063/1.3212729 (3 pages) | Cited 1 time

Online Publication Date: 27 August 2009

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Anisotropy of the optical second harmonic generation (SHG) in a multiferroic BiFeO3 single crystal is observed by an SHG microscope. Polarization dependences of SH intensities are measured in several polarization configurations of the incident and SH waves to determine the magnitude and sign of polar i-type SHG tensor components. To obtain proper values of these SHG tensors, the effects of the interference term and wave number mismatch are taken into account in these analyses. d24 component is 15 times larger than d32 and this result is essentially different from the thin film case.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.25.Ja Polarization
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Local bonding effect on the defect states of oxygen vacancy in amorphous HfSiO4

Hyeon-Kyun Noh, Byungki Ryu, Eun-Ae Choi, Junhyeok Bang, and K. J. Chang

Appl. Phys. Lett. 95, 082905 (2009); http://dx.doi.org/10.1063/1.3216058 (3 pages) | Cited 1 time

Online Publication Date: 28 August 2009

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We perform first-principles calculations to investigate the defect properties of O vacancies in amorphous HfSiO4. For atomic models generated from molecular dynamics simulations, we find that O vacancies, which have only Hf atoms or a mixture of Hf and Si in the neighborhood, behave as charge trap centers, similar to those in HfO2. On the other hand, O vacancies surrounded by only Si atoms are energetically most favorable and have very high trap energies for both electron and hole carriers. Thus, these defects are suggested to be responsible for the reduction of threshold voltage instability.
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61.50.Lt Crystal binding; cohesive energy
61.72.jd Vacancies
71.15.Pd Molecular dynamics calculations (Car-Parrinello) and other numerical simulations
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.55.Jv Disordered structures; amorphous and glassy solids
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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