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24 Aug 2009

Volume 95, Issue 8, Articles (08xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 082507 (2009); http://dx.doi.org/10.1063/1.3186782 (3 pages)

Sang-Koog Kim, Ki-Suk Lee, and Dong-Soo Han
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Prediction of ordering and spontaneous rotation of epitaxial habits in substrate-coherent InGaN and GaAsSb

Jefferson Zhe Liu, Giancarlo Trimarchi, and Alex Zunger

Appl. Phys. Lett. 95, 081901 (2009); http://dx.doi.org/10.1063/1.3200234 (3 pages)

Online Publication Date: 24 August 2009

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Coherently strained In0.5Ga0.5N on GaN and CaO substrates are theoretically predicted to show stable ordering in the chalcopyrite structure, as is Ga2AsSb on GaAs and InP substrates. Depending on the substrate and the film concentration, we predict a spontaneous rotation of the stablest chalcopyrite film axis from perpendicular to parallel to the (001) substrate.
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68.55.ag Semiconductors
68.35.bg Semiconductors
81.65.-b Surface treatments

Flexoelectric studies on mixtures of compounds made of rodlike and bent-core molecules

Brindaban Kundu, Arun Roy, R. Pratibha, and N. V. Madhusudana

Appl. Phys. Lett. 95, 081902 (2009); http://dx.doi.org/10.1063/1.3213544 (3 pages) | Cited 5 times

Online Publication Date: 24 August 2009

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We report measurements of the temperature variations of the flexoelastic ratio (e1−e3)/K of octadecyl cyanobiphenyl and a mixture of this compound with another one with bent-core (BC) molecules, using hybrid aligned nematic cells. Addition of 5 mol % of the BC compound doubles the flexoelastic ratio, implying that the BC compound has ∼ 20 times larger value compared to that of the compound with calamitic molecules. Mixtures with >11 mol % of the BC compound exhibit only a homeotropic alignment. We develop a simple model to account for this result which arises because of a large positive self-energy due to flexoelectric polarization.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
61.30.Hn Surface phenomena: alignment, anchoring, anchoring transitions, surface-induced layering, surface-induced ordering, wetting, prewetting transitions, and wetting transitions

Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions

S. Roy, M. Portail, T. Chassagne, J. M. Chauveau, P. Vennéguès, and M. Zielinski

Appl. Phys. Lett. 95, 081903 (2009); http://dx.doi.org/10.1063/1.3202783 (3 pages) | Cited 6 times

Online Publication Date: 24 August 2009

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In this work, transmission electron microscopy is used to investigate the influence of the carbonization conditions on the formation of crystal defects in 3C-SiC layers deposited on (111) silicon. We focus on two kinds of defects; (1) the stacking faults and microtwins lying in the (mathmath1) planes, and (2) the double positioning domains. While the density of the stacking faults and microtwins is found independent on the carbonization conditions, the size of the double positioning domains is strongly influenced by the propane flow rate and can be related to the substrate sealing at the early stage of carbonization.
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71.55.Ht Other nonmetals
61.72.Mm Grain and twin boundaries
68.37.Og High-resolution transmission electron microscopy (HRTEM)
61.72.Nn Stacking faults and other planar or extended defects

Highly dense amorphous Nb2O5 films with closed nanosized pores

M. Vinnichenko, A. Rogozin, D. Grambole, F. Munnik, A. Kolitsch, W. Möller, O. Stenzel, S. Wilbrandt, A. Chuvilin, and U. Kaiser

Appl. Phys. Lett. 95, 081904 (2009); http://dx.doi.org/10.1063/1.3212731 (3 pages) | Cited 1 time

Online Publication Date: 24 August 2009

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This study is focused on tailoring the porosity of Nb2O5 films during reactive pulsed magnetron sputtering. Dense amorphous films containing nanopores only in deeper regions have been grown at a high rate using substrate temperatures below 60 °C. The films exhibit a high refractive index, n400 = 2.54, a low extinction coefficient, k400 ∼ 6×10−4, a low mechanical stress (−90 MPa), and a negligible thermal shift. The specific depth distribution of the nanopores is believed to be the reason for the optimum trade-off between a high refractive index and low mechanical stress.
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68.55.-a Thin film structure and morphology
61.43.Gt Powders, porous materials
62.25.-g Mechanical properties of nanoscale systems
81.15.Cd Deposition by sputtering
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Jg Amorphous semiconductors; glasses
61.46.-w Structure of nanoscale materials

Investigation on the role of nitrogen in crystallization of Sb-rich phase change materials

Jihoon Choi, Hyun Seok Lee, Taek Sung Lee, Suyoun Lee, Won Mok Kim, Donghwan Kim, and Byung-ki Cheong

Appl. Phys. Lett. 95, 081905 (2009); http://dx.doi.org/10.1063/1.3211871 (3 pages) | Cited 5 times

Online Publication Date: 26 August 2009

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To better understand the role of nitrogen (N) during crystallization of Sb-rich phase change materials, a study was conducted using Sb and Sb70Te30 as host materials of N. Crystallization of the as-sputtered Sb–N films of varying N content was examined to reveal that Sb–N bonds are formed in the as-sputtered states, enhancing amorphous phase stability increasingly with N content. Crystallization appeared to proceed with irreversible dissociation of these bonds to form N2 molecules that may then exist stably during the subsequent memory operations. N2 molecules are considered to play as growth-retarding agents as demonstrated with memory operations of N-doped Sb70Te30.
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64.70.dg Crystallization of specific substances
42.70.-a Optical materials
61.43.Er Other amorphous solids
61.72.up Other materials
68.55.aj Insulators
81.15.Cd Deposition by sputtering

Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm

D. Lackner, O. J. Pitts, M. Steger, A. Yang, M. L. W. Thewalt, and S. P. Watkins

Appl. Phys. Lett. 95, 081906 (2009); http://dx.doi.org/10.1063/1.3216041 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2009

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We report the growth and optical characterization of InAsSb/InAs strain balanced superlattice structures on GaSb substrates for potential application in midinfrared photodetectors. Photoluminescence (PL) emission was observed in the range 5 μm ≤ λ ≤ 10 μm at 4 K for Sb compositions 0.14 ≤ xSb ≤ 0.27. The PL energy was found to depend approximately linearly on antimony, consistent with a type II band lineup. The dependence of the emission energies on the Sb mole fraction is in agreement with trends predicted by various theoretical works. The data suggest that this transition reaches zero energy for a composition of xSb = 0.37.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Toward an ideal Schottky barrier on 3C-SiC

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone, and Vito Raineri

Appl. Phys. Lett. 95, 081907 (2009); http://dx.doi.org/10.1063/1.3211965 (3 pages) | Cited 8 times

Online Publication Date: 27 August 2009

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The electrical characteristics of Au/3C-SiC Schottky diodes were studied as a function of contact area. While the larger diodes were characterized by conventional current-voltage measurements, conductive atomic force microscopy was used to perform current-voltage measurements on diodes of contact radius down to 5 μm. The results show that the Schottky barrier height increases upon reducing the contact area, and for the smallest diodes the value approaches the ideal barrier height of the system. The results were correlated with defects in the 3C-SiC and an analytical expression was derived to describe the dependence of the barrier height on the defect density.
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85.30.Kk Junction diodes
73.40.Ns Metal-nonmetal contacts
85.30.De Semiconductor-device characterization, design, and modeling
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices

Enhanced plasticity in a Zr-based bulk metallic glass composite with in situ formed intermetallic phases

G. Chen, H. Bei, Y. Cao, A. Gali, C. T. Liu, and E. P. George

Appl. Phys. Lett. 95, 081908 (2009); http://dx.doi.org/10.1063/1.3211912 (3 pages) | Cited 8 times

Online Publication Date: 28 August 2009

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An in situ formed intermetallic phase/bulk metallic glass composite with high strength and good plasticity was fabricated by casting Zr55.0Cu29.0Ni8.0Al8.0 melts. In situ formed tetragonal structured (Zr,Ni,Al)2(Cu,Ni,Al) intermetallic particles with a hardness of 9.6±0.3 GPa improve the fracture strength of the composite. Micrographs of the fractured samples reveal that the shear band spacing is smaller than the intermetallic particles, indicating that they can effectively block shear band propagation before catastrophic fracture.
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81.40.Lm Deformation, plasticity, and creep
62.20.fq Plasticity and superplasticity
61.43.Fs Glasses
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.mm Fracture
81.20.-n Methods of materials synthesis and materials processing
81.05.Pj Glass-based composites, vitroceramics
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