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31 Aug 2009

Volume 95, Issue 9, Articles (09xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 95, 091901 (2009); http://dx.doi.org/10.1063/1.3212896 (3 pages)

Noy Bassik, George M. Stern, and David H. Gracias
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Optical and electron beam studies of carrier transport in quasibulk GaN

Y. Lin, E. Flitsyian, L. Chernyak, T. Malinauskas, R. Aleksiejunas, K. Jarasiunas, W. Lim, S. J. Pearton, and K. Gartsman

Appl. Phys. Lett. 95, 092101 (2009); http://dx.doi.org/10.1063/1.3220062 (3 pages) | Cited 3 times

Online Publication Date: 31 August 2009

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Variable temperature light-induced transient grating technique combined with electron beam-induced current measurements in situ in a scanning electron microscope were employed for carrier transport studies in quasibulk hydride-vapor phase epitaxy grown undoped GaN layers. Diffusion length of carriers independently determined from both techniques was found to increase with temperature in the range from 70 to 400 K. This increase was attributed to the temperature-induced growth of carrier lifetime, as was confirmed by light-induced transient grating measurements below 300 K and by cathodoluminescence above room temperature.
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73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
68.55.ag Semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.60.Hk Cathodoluminescence, ionoluminescence

Electroluminescence from Ge on Si substrate at room temperature

Weixuan Hu (胡炜玄), Buwen Cheng (成步文), Chunlai Xue (薛春来), Haiyun Xue (薛海韵), Shaojian Su (苏少坚), Anqi Bai (白安琪), Liping Luo (罗丽萍), Yude Yu (俞育德), and Qiming Wang (王启明)

Appl. Phys. Lett. 95, 092102 (2009); http://dx.doi.org/10.1063/1.3216577 (3 pages) | Cited 10 times

Online Publication Date: 31 August 2009

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A Ge/Si heterojunction light emitting diode with a p+-Ge/i-Ge/N+–Si structure was fabricated using the ultrahigh vacuum chemical vapor deposition technology on N+–Si substrate. The device had a good I-V rectifying behavior. Under forward bias voltage ranging from 1.1 to 2.5 V, electroluminescence around 1565 nm was observed at room temperature. The mechanism of the light emission is discussed by the radiative lifetime and the scattering rate. The results indicate that germanium is a potential candidate for silicon-based light source material.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Resistivity noise in crystalline magnetic nanowires and its implications to domain formation and kinetics

Amrita Singh, Debtosh Chowdhury, and Arindam Ghosh

Appl. Phys. Lett. 95, 092103 (2009); http://dx.doi.org/10.1063/1.3212872 (3 pages) | Cited 1 time

Online Publication Date: 31 August 2009

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We have investigated the time-dependent fluctuations in electrical resistance, or noise, in high-quality crystalline magnetic nanowires within nanoporous templates. The noise increases exponentially with increasing temperature and magnetic field, and has been analyzed in terms of domain wall depinning within the Neel–Brown framework. The frequency-dependence of noise also indicates a crossover from nondiffusive kinetics to long-range diffusion at higher temperatures, as well as a strong collective depinning, which need to be considered when implementing these nanowires in magnetoelectronic devices.
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75.60.Ch Domain walls and domain structure
75.50.Tt Fine-particle systems; nanocrystalline materials
72.70.+m Noise processes and phenomena
66.30.Pa Diffusion in nanoscale solids
61.43.Gt Powders, porous materials
73.63.-b Electronic transport in nanoscale materials and structures

Gate-controlled current switch in graphene

Kimmo Sääskilahti, Ari Harju, and Pirjo Pasanen

Appl. Phys. Lett. 95, 092104 (2009); http://dx.doi.org/10.1063/1.3216580 (3 pages) | Cited 1 time

Online Publication Date: 1 September 2009

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We numerically study cross conductances in a four-terminal all-graphene setup. We show that far away from the Dirac point, current flows along zigzag directions, giving the possibility to guide the current between terminals using a tunable pn-junction. The device operates as a gate-controlled current switch, and the electronic properties of graphene are crucial for efficient performance.
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73.63.Fg Nanotubes
85.35.Kt Nanotube devices
72.10.Bg General formulation of transport theory

Nonuniform doping distribution along silicon nanowires measured by Kelvin probe force microscopy and scanning photocurrent microscopy

E. Koren, Y. Rosenwaks, J. E. Allen, E. R. Hemesath, and L. J. Lauhon

Appl. Phys. Lett. 95, 092105 (2009); http://dx.doi.org/10.1063/1.3207887 (3 pages) | Cited 17 times

Online Publication Date: 1 September 2009

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We use Kelvin probe force microscopy and scanning photocurrent microscopy to measure the doping distribution along single phosphorous-doped silicon nanowire grown by the vapor-liquid-solid method. A nonlinear potential drop along biased silicon nanowires is detected both by measuring the surface potential directly via Kelvin probe force microscopy and by integrating the photocurrent measured by scanning photocurrent microscopy. These variations in the potential and field are further analyzed to extract the longitudinal dopant distribution along an individual silicon nanowire. The results show a very good agreement between the two methods to quantitatively detect potential, field, and doping variations within doped silicon nanowires.
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61.72.uf Ge and Si
81.16.-c Methods of micro- and nanofabrication and processing
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
81.07.-b Nanoscale materials and structures: fabrication and characterization
72.40.+w Photoconduction and photovoltaic effects
73.63.Nm Quantum wires
81.05.Cy Elemental semiconductors
68.65.La Quantum wires (patterned in quantum wells)

Electron tunneling characteristics on La0.7Sr0.3MnO3 thin-film surfaces at high temperature

Khabiboulakh Katsiev, Bilge Yildiz, Kavaipatti Balasubramaniam, and Paul A. Salvador

Appl. Phys. Lett. 95, 092106 (2009); http://dx.doi.org/10.1063/1.3204022 (3 pages) | Cited 9 times

Online Publication Date: 1 September 2009

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We report on the electron tunneling characteristics on La0.7Sr0.3MnO3 (LSM) thin-film surfaces up to 580 °C in 10−3 mbar oxygen pressure, using scanning tunneling microscopy/spectroscopy (STM/STS). A thresholdlike drop in the tunneling current was observed at positive bias in STS, which is interpreted as a unique indicator for the activation polarization in cation-oxygen bonding on LSM cathodes. Sr-enrichment was found on the surface at high temperature using Auger electron spectroscopy, and was accompanied by a decrease in tunneling conductance in STS. This suggests that Sr-terminated surfaces are less active for electron transfer in oxygen reduction compared to Mn-terminated surfaces on LSM.
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73.61.Ng Insulators
73.20.At Surface states, band structure, electron density of states
79.20.Fv Electron impact: Auger emission
82.47.Ed Solid-oxide fuel cells (SOFC)
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films
73.40.Gk Tunneling

Optical injection and detection of ballistic pure spin currents in Ge

Eric J. Loren, Brian A. Ruzicka, Lalani K. Werake, Hui Zhao, Henry M. van Driel, and Arthur L. Smirl

Appl. Phys. Lett. 95, 092107 (2009); http://dx.doi.org/10.1063/1.3222869 (3 pages) | Cited 9 times

Online Publication Date: 2 September 2009

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Ballistic pure spin currents are injected into Ge at 295 K using quantum interference between one and two photon absorption processes for 1786 and 893 nm, 200 fs optical pulses. The spin currents are spatially and temporally detected using polarization- and phase-dependent differential transmission techniques with nanometer spatial and femtosecond temporal resolution. We interpret the dynamics in terms of the fast spin relaxation of the holes and intervalley transfer of electrons.
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72.20.Ht High-field and nonlinear effects
72.25.Rb Spin relaxation and scattering
72.25.Dc Spin polarized transport in semiconductors
72.80.Cw Elemental semiconductors
73.23.Ad Ballistic transport

Electrochemical growth and resistive switching of flat-surfaced and (111)-oriented Cu2O films

Sung-Oong Kang, Sahwan Hong, Jinsik Choi, Jin-Soo Kim, Inrok Hwang, Ik-Su Byun, Kyu-Sik Yun, and Bae Ho Park

Appl. Phys. Lett. 95, 092108 (2009); http://dx.doi.org/10.1063/1.3202394 (3 pages) | Cited 10 times

Online Publication Date: 2 September 2009

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Flat-surfaced and fully (111)-oriented Cu2O films were grown through a chelate-assisted electrochemical approach. Based on key roles of chelating agent, the flat surface of films controlled over the columnar-grained growth was obtainable with a root-mean-square roughness value below 3 nm. Cu2O films treated by a rapid-thermal-annealing process at 200 °C exhibited unipolar switching I-V characteristics, presenting the bistable resistance states with a high resistance ratio (Roff/Ron) over 3 orders of magnitude and considerably stable switching properties within 100 switching cycles.
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81.15.Pq Electrodeposition, electroplating
81.05.Hd Other semiconductors
68.35.bg Semiconductors
61.72.Cc Kinetics of defect formation and annealing
73.61.Le Other inorganic semiconductors

Influence of Si–N complexes on the electronic properties of GaAsN alloys

Y. Jin, Y. He, H. Cheng, R. M. Jock, T. Dannecker, M. Reason, A. M. Mintairov, C. Kurdak, J. L. Merz, and R. S. Goldman

Appl. Phys. Lett. 95, 092109 (2009); http://dx.doi.org/10.1063/1.3198207 (3 pages) | Cited 3 times

Online Publication Date: 3 September 2009

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We have investigated the influence of Si–N complexes on the electronic properties of GaAsN alloys. The presence of Si–N complexes is suggested by a decrease in carrier concentration, n, with increasing N-composition, observed in GaAsN:Si films but not in modulation-doped heterostructures. In addition, for GaAsN:Te (GaAsN:Si), n increases substantially (minimally) with annealing-T, suggesting a competition between annealing-induced Si–N complex formation and a reduced concentration of N-related traps. Since Si–N complex formation is enhanced for GaAsN:Si growth with the (2×4) reconstruction, which has limited group V sites for As–N exchange, the (Si–N)As interstitial pair is identified as the dominant Si–N complex.
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81.05.Ea III-V semiconductors
71.20.Nr Semiconductor compounds
73.61.Ey III-V semiconductors
61.72.uj III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.72.jj Interstitials

Coulomb blockade behavior in an indium nitride nanowire with disordered surface states

K. Aravind, Y. W. Su, I. L. Ho, C. S. Wu, K. S. Chang-Liao, W. F. Su, K. H. Chen, L. C. Chen, and C. D. Chen

Appl. Phys. Lett. 95, 092110 (2009); http://dx.doi.org/10.1063/1.3216071 (3 pages) | Cited 2 times

Online Publication Date: 4 September 2009

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We present electron transport phenomena in a single electron transistor based on an individual indium nitride nanowire. Meticulous Coulomb oscillations are observed at low temperatures. While the device shows single period Coulomb oscillation at high temperatures or at high bias voltages, additional satellite peaks along with the main Coulomb peak appear at low temperatures and low bias voltages. The quasiperiodic structure is attributed to the mixing of dissimilar Coulomb oscillations arising from two serially coupled islands embedded inadvertently in the surface metallic states of the nanowire. The proposed model is numerically simulated with good agreement with the experimental data.
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73.63.Nm Quantum wires
73.23.Hk Coulomb blockade; single-electron tunneling
85.35.Gv Single electron devices
73.20.At Surface states, band structure, electron density of states
73.21.Hb Quantum wires
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