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Applied Physics Letters / Volume 96 / Issue 1 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 96, 011901 (2010); http://dx.doi.org/10.1063/1.3280384 (3 pages)

Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

M. Syperek1, P. Leszczyński1, J. Misiewicz1, E. M. Pavelescu2, C. Gilfert2, and J. P. Reithmaier2

1Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
2Institute of Nanostructure Technologies and Analytics, Technische Physik, Universitaet Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany

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(Received 5 November 2009; accepted 6 December 2009; published online 4 January 2010)

Low temperature carrier dynamics in the InGaAs/GaAs quantum dot-based tunnel injection structure is studied by the time resolved photoluminescence experiment. We observed strongly modified photoluminescence kinetics between tunnel injection and reference quantum dot structures. Slowing down of the photoluminescence rise time in the tunnel injection system under weak and moderate excitation powers, we attributed to a fingerprint of a feeding process of quantum dot states with nonresonant carriers tunneling from the quantum well reservoir. We propose a simple three-level rate equation model to explain qualitatively the observed photoluminescence temporal behavior. Its result shows a good agreement with our experimental data.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium arsenide, III-V semiconductors, indium compounds, photoluminescence, semiconductor quantum dots, semiconductor quantum wells, time resolved spectra, tunnelling

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3280384

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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