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Applied Physics Letters / Volume 96 / Issue 10 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 101102 (2010); http://dx.doi.org/10.1063/1.3353995 (3 pages)

Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

Hee Jin Kim1, Suk Choi1, Seong-Soo Kim1, Jae-Hyun Ryou1, P. Douglas Yoder1, Russell D. Dupuis1, Alec M. Fischer2, Kewei Sun2, and Fernando A. Ponce2

1Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr. NW, Atlanta, Georgia 30332-0250, USA
2Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA

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(Received 30 November 2009; accepted 14 February 2010; published online 8 March 2010)

Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency has also been found to significantly depend on the InAlN growth temperature. Optimized InAlN growth at ∼ 840 °C results in a lower growth rate and longer growth times than at ∼ 780 °C. The observed reduction in emission efficiency for InAlN layers grown at higher temperatures is possibly attributed to thermal damage in the green active region.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, electroluminescence, III-V semiconductors, indium compounds, light emitting diodes

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3353995

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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