APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 96 / Issue 10 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 101104 (2010); http://dx.doi.org/10.1063/1.3354078 (3 pages)

Uniform-field transverse electroreflectance using a mode-locked laser and a radio-frequency bias

J. K. Wahlstrand, H. Zhang, and S. T. Cundiff

JILA, National Institute of Standards and Technology, University of Colorado, Boulder, Colorado 80309-0440, USA

View MapView Map

(Received 28 December 2009; accepted 24 January 2010; published online 9 March 2010)

We describe a technique for transverse electroreflectance that uses broadband optical pulses from a mode-locked laser and a rapidly oscillating bias with a frequency near half the laser repetition rate. Since the electrodes are electrically isolated from the sample, highly nonuniform trap-enhanced fields do not occur. Because the time-averaged electric field is zero, space charges do not build up. Experimental results are presented for semi-insulating GaAs. The technique is also useful in ultrafast experiments that require a uniform transverse electric field.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

electroreflectance, gallium arsenide, III-V semiconductors, laser mode locking, space charge

PACS

  • 78.20.Jq

    Electro-optical effects

  • 42.60.Fc

    Modulation, tuning, and mode locking

  • 77.22.Jp

    Dielectric breakdown and space-charge effects

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3354078

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    D. E. Aspnes and J. E. Rowe, Phys. Rev. B 5, 4022 (1972).

    D. E. Aspnes and A. A. Studna, Phys. Rev. B 7, 4605 (1973).

    X. Yin and F. H. Pollak, Appl. Phys. Lett. 59, 2305 (1991)APPLAB000059000018002305000001.

    J. L. Shay, Phys. Rev. B 2, 803 (1970).

    O. J. Glembocki, B. V. Shanabrook, N. Bottka, W. T. Beard, and J. Comas, Appl. Phys. Lett. 46, 970 (1985)APPLAB000046000010000970000001.

    H. Shen and M. Dutta, J. Appl. Phys. 78, 2151 (1995)JAPIAU000078000004002151000001
    and references therein.

    V. Rehn and D. S. Kyser, Phys. Rev. Lett. 18, 848 (1967).

    M. Ruff, D. Streb, S. U. Dankowski, S. Tautz, P. Kiesel, B. Knüpfer, M. Kneissl, N. Linder, G. H. Döhler, and U. D. Keil, Appl. Phys. Lett. 68, 2968 (1996)APPLAB000068000021002968000001.

    N. Bottka and J. E. Fischer, Phys. Rev. B 3, 2514 (1971).

    J. Hader, N. Linder, and G. H. Döhler, Phys. Rev. B 55, 6960 (1997).

    S. E. Ralph and D. Grischkowsky, Appl. Phys. Lett. 59, 1972 (1991)APPLAB000059000016001972000001.

    D. S. Kim and D. S. Citrin, J. Appl. Phys. 101, 053105 (2007)JAPIAU000101000005053105000001.


For access to citing articles, you need to log in.


Figures (2)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Uniform-field transverse electroreflectance using a mode-locked laser and a radio-frequency bias
  2. All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip
  3. Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes
  4. Anisotropic heat propagation velocity in quantum cascade lasers
  5. Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure
Go to AIP Home
Copyright © American Institute of Physics
close