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Appl. Phys. Lett. 96, 101105 (2010); http://dx.doi.org/10.1063/1.3357426 (3 pages)

An electrically injected quantum dot spin polarized single photon source

Pallab Bhattacharya, Ayan Das, Debashish Basu, Wei Guo, and Junseok Heo

Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA

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(Received 1 December 2009; accepted 16 February 2010; published online 9 March 2010)

The characteristics of an electrically injected spin polarized single photon source have been investigated. The GaAs-based microcavity diode consists of a single InAs/GaAs self-organized quantum dot as the single photon source and a MnAs/Al0.1Ga0.9As Schottky tunnel barrier for the ferromagnetic contact to inject spin polarized electrons. The measured output circular polarization of the biexciton emission at λ ∼ 1130 nm exhibits a switching behavior as a function of magnetic field, in the Faraday geometry, the value remaining near-zero for B<1 T and ∼ 6%–8% for B ≥ 1 T. The linear polarization shows a complementary trend. The results are explained in the framework of the exciton fine structure in the quantum dot and the effects of electron-hole exchange splitting, due to in-plane quantum dot anisotropy, and Zeeman splitting on the spin eigenstates and their coupling to the photon field.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 73.21.La

    Quantum dots

  • 73.30.+y

    Surface double layers, Schottky barriers, and work functions

  • 71.35.-y

    Excitons and related phenomena

  • 71.70.Ej

    Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

  • 78.67.Hc

    Quantum dots

  • 81.07.Ta

    Quantum dots

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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