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Applied Physics Letters / Volume 96 / Issue 10 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 101107 (2010); http://dx.doi.org/10.1063/1.3358142 (3 pages)

High performance tunnel injection quantum dot comb laser

Chi-Sen Lee, Wei Guo, Debashish Basu, and Pallab Bhattacharya

Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122, USA

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(Received 15 January 2010; accepted 17 February 2010; published online 10 March 2010)

A high-speed multiwavelength quantum dot comb laser, grown by molecular beam epitaxy, is demonstrated. The device is characterized with a 75.9 nm (full width at half maximum) and a 91.4 nm (Δ−15 dB) wide lasing spectrum. There are 105 and 185 simultaneously emitted longitudinal modes with a maximum channel intensity nonuniformity of less than 3 dB in the spectral range of 1231–1252 nm and 1274–1311 nm, respectively, for a laser with 1040 μm cavity length. The channel spacing can be tuned with cavity length and remains invariant in the temperature range of 300–323 K. The small signal modulation bandwidth is 7.5 GHz.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium arsenide, III-V semiconductors, indium compounds, microcavity lasers, molecular beam epitaxial growth, quantum dot lasers

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.By

    Design of specific laser systems

  • 42.55.Sa

    Microcavity and microdisk lasers

  • 68.55.A-

    Nucleation and growth

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3358142

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Z. Mi, P. Bhattacharya, and S. Fathpour, Appl. Phys. Lett. 86, 153109 (2005)APPLAB000086000015153109000001.

    S. Fathpour, Z. Mi, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, A. V. Kozhukhov, and N. N. Ledentsov, Appl. Phys. Lett. 85, 5164 (2004)APPLAB000085000022005164000001.

    I. P. Marko, N. F. Massé, S. J. Sweeney, A. D. Andreev, A. R. Adams, N. Hatori, and M. Sugawara, Appl. Phys. Lett. 87, 211114 (2005)APPLAB000087000021211114000001.

    B. W. Hakki and T. L. Paoli, J. Appl. Phys. 46, 1299 (1975)JAPIAU000046000003001299000001.


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