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Applied Physics Letters / Volume 96 / Issue 10 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 101111 (2010); http://dx.doi.org/10.1063/1.3309707 (3 pages)

Doping tunable resonance: Toward electrically tunable mid-infrared metamaterials

Xiaoyu Miao1,2, Brandon Passmore1, Aaron Gin1,2, William Langston1, Shivashankar Vangala3, William Goodhue3, Eric Shaner1, and Igal Brener1,2

1Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, USA
2Center for Integrated Nanotechnologies, Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, USA
3Department of Physics and Applied Physics, University of Massachusetts–Lowell, Lowell, Massachusetts 01854, USA

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(Received 17 November 2009; accepted 17 January 2010; published online 10 March 2010)

We demonstrate metamaterials at the mid-infrared (mid-IR) wavelengths (8–12 μm) that can be widely tuned by doping in adjacent semiconductor epilayers. The metamaterials are based on metallic split ring resonators (SRRs) fabricated on doped indium antimonide (InSb). Finite integral time-domain simulation results and measured transmission data show that the resonance blueshifts when the semiconductor electron carrier concentration is increased while keeping the split ring geometry constant. A resonant wavelength shift of 1.15 μm is achieved by varying the carrier concentration of underlying InSb epilayer from 1×1016 to 2×1018 cm−3. This work represents the first step toward active tunable metamaterials in the mid-IR where the resonance can be tuned in real time by applying an electric bias voltage to control the effective carrier density.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

carrier density, indium compounds, infrared spectra, metamaterials, optical resonators, semiconductor doping, semiconductor epitaxial layers, spectral line shift

PACS

  • 78.66.Hf

    II-VI semiconductors

  • 78.30.Fs

    III-V and II-VI semiconductors

  • 81.05.Xj

    Metamaterials for chiral, bianisotropic and other complex media

  • 61.72.U-

    Doping and impurity implantation

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3309707

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. Manzanares-Martinez, F. Ramos-Mendieta, and P. Halevi, Phys. Rev. B 72, 035336, (2005).


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