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Applied Physics Letters / Volume 96 / Issue 10 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 101112 (2010); http://dx.doi.org/10.1063/1.3340945 (3 pages)

High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes

G. Tabares1, A. Hierro1, J. M. Ulloa1, A. Guzman1, E. Muñoz1, A. Nakamura2, T. Hayashi2, and J. Temmyo2

1Dpto. Ingeniería Electrónica, ISOM, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
2Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan

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(Received 14 October 2009; accepted 10 February 2010; published online 10 March 2010)

Schottky photodiodes based on Au-ZnMgO/sapphire are demonstrated covering the spectral region from 3.35 to 3.48 eV, with UV/VIS rejection ratios up to ∼ 105 and responsivities as high as 185 A/W. Both the rejection ratio and the responsivity are shown to be largely enhanced by the presence of an internal gain mechanism, by which the compensated films become highly conductive as a result of illumination. This causes a large increase in the tunnel current through the Schottky barrier, yielding internal gains that are a function of the incident photon flux.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

gold, photodiodes, sapphire, Schottky barriers, zinc compounds

PACS

  • 85.60.Dw

    Photodiodes; phototransistors; photoresistors

  • 73.30.+y

    Surface double layers, Schottky barriers, and work functions

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3340945

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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