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Appl. Phys. Lett. 96, 101113 (2010); http://dx.doi.org/10.1063/1.3340946 (3 pages)

Electronic and optical properties of CdZnO quantum well structures with electric field and polarization effects

H. C. Jeon1, S. H. Park2, S. J. Lee1, T. W. Kang1, and T. F. George3

1Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea
2Department of Electronics Engineering, Catholic University of Daegu, Kyeongbuk 712-702, Republic of Korea
3Department of Chemistry and Biochemistry and Department of Physics and Astronomy, Office of the Chancellor and Center for Nanoscience, University of Missouri–St. Louis, St. Louis, Missouri 63121, USA

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(Received 3 December 2009; accepted 10 February 2010; published online 10 March 2010)

Electronic, optical, and electrical properties of CdZnO/MgZnO quantum well (QW) structures, considering internal field and polarization effect, are investigated by using many-body theory. The CdZnO/MgZnO QW structure with higher Cd composition, which has deeper and stronger confinement, is found to have smaller optical gain because the strain-induced piezoelectric polarization and spontaneous polarization in the well increase with the inclusion of Cd. The internal field and polarization is reduced effectively by using the ferroelectric dipole moment of the Li addition in the well region of the Li-doped CdZnO/ZnMgO QW structure. These results demonstrate that a high-performance optical devices operation can be realized in CdZnO/MgZnO QW structures by eliminating the droop phenomenon.

© 2010 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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