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Applied Physics Letters / Volume 96 / Issue 10 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 101114 (2010); http://dx.doi.org/10.1063/1.3330876 (3 pages)

Photogated transistor of III-nitride nanorods

H. W. Seo1, L. W. Tu2, Q. Y. Chen2, C. Y. Ho2, Y. T. Lin2, K. L. Wu2, D. J. Jang2, D. P. Norman1, and N. J. Ho3

1Department of Physics and Astronomy, University of Arkansas, Little Rock, Arkansas 72204, USA
2Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
3Department of Materials and Optoelectronic Science and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

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(Received 21 October 2009; accepted 1 February 2010; published online 11 March 2010)

A III-nitride-based photogated transistor using photons to control the channel width of an otherwise gateless field effect transistor (FET) is investigated. This is accomplished by stacking sequential layers of p-GaN/InGaN/n-GaN on a Si substrate in an array of nanorods. The nitride p-i-n diode can be activated by light, whereupon the nanorod device shows phototransistor characteristics in forward bias but behaves like a photoconductor when in reverse bias. An optically pumped FET model, as justified by the low-dimensional nanogeometry, is used in analysis of the device. The resulting photogate efficiency and photocarrier mobilities are estimated to be ∼ 0.04 V/(W/cm2) and, ∼ 2000–3000 cm2/V s, respectively.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

field effect transistors, gallium compounds, III-V semiconductors, indium compounds, nanorods, photons, phototransistors, p-i-n photodiodes, wide band gap semiconductors

PACS

  • 85.60.Dw

    Photodiodes; phototransistors; photoresistors

  • 73.63.Bd

    Nanocrystalline materials

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3330876

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    H. W. Seo, Q. Y. Chen, M. N. Iliev, L. W. Tu, C. L. Hsiao, J. K. Meen, and W. K. Chu, Appl. Phys. Lett. 88, 153124 (2006)APPLAB000088000015153124000001.

    I. K. Park, M. K. Kwon, S. H. Baek, Y. W. Ok, T. Y. Seong, S. J. Park, Y. S. Kim, Y. T. Moon, and D. J. Kim, Appl. Phys. Lett. 87, 061906 (2005)APPLAB000087000006061906000001
    Y. T. Moon, D. J. Kim, J. S. Park, J. T. Oh, J. M. Lee, Y. W. Ok, H. S. Kim, and S. J. Park, ibid. 79, 599 (2001)APPLAB000079000005000599000001.

    J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. Denbaars, Appl. Phys. Lett. 71, 2572 (1997)APPLAB000071000018002572000001.


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