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Applied Physics Letters / Volume 96 / Issue 10 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 101115 (2010); http://dx.doi.org/10.1063/1.3360199 (3 pages)

Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy

Wei Lin, Shuping Li, and Junyong Kang

Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People’s Republic of China

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(Received 28 October 2009; accepted 19 February 2010; published online 12 March 2010)

The near-ultraviolet (UV) light emitting diodes (LED) using ultrathin InN/GaN quantum well (QW) are fabricated by metal organic vapor phase epitaxy. The x-ray diffraction measurement shows well-defined satellite peaks, which implies abrupt interfaces and good layer periodicity of the QWs. The electroluminescence only exhibits a near-UV emission centered at approximately 3.14–3.18 eV without other emission peaks even the common yellow luminescence, which further confirms the advantages of the near-UV LED especially the minimization of phase separation, interdiffusion, and defects in the QWs. The near-UV emission is found to be stable even under high pulsed injection-current in contrast to the conventional InGaN based LED. This behavior indicates effective avoidance of the redshift related to the many body effect as well as the blueshift induced by band filling effect, localized states in the barrier, and the quantum confined stark effect. The realization of the near-UV LED using the ultrathin InN/GaN QW would facilitate the application of near-UV solid-state lighting source.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

electroluminescence, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, localised states, MOCVD, quantum confined Stark effect, red shift, semiconductor growth, vapour phase epitaxial growth, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3360199

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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