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Applied Physics Letters / Volume 96 / Issue 10 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 101116 (2010); http://dx.doi.org/10.1063/1.3356221 (3 pages)

Directional and controllable edge-emitting ZnO ultraviolet random laser diodes

H. K. Liang, S. F. Yu, and H. Y. Yang

School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798

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(Received 19 January 2010; accepted 16 February 2010; published online 12 March 2010)

Room-temperature ultraviolet random lasing action is demonstrated from a p-GaN/annealed i-ZnO:Al(3%)/n-ZnO:Al(5%) buried heterojunction diode with a 2 μm rib waveguide. Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and optical confinement of a buried heterojunction rib waveguide structure. Hence, emission intensity (threshold current) can be enhanced (reduced) by ∼ 9 times ( ∼ 40%). Directional emission as well as controllability on the number of the random lasing modes can also be achieved.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, II-VI semiconductors, rib waveguides, semiconductor lasers, waveguide lasers, zinc compounds

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.By

    Design of specific laser systems

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3356221

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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