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Applied Physics Letters / Volume 96 / Issue 10 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 101118 (2010); http://dx.doi.org/10.1063/1.3356224 (3 pages)

Nanogap quantum dot photodetectors with high sensitivity and bandwidth

Michael C. Hegg, Matthew P. Horning, Tom Baehr-Jones, Michael Hochberg, and Lih Y. Lin

Department of Electrical Engineering, University of Washington, Seattle, Washington 98195-2500, USA

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(Received 25 January 2010; accepted 10 February 2010; published online 12 March 2010)

We report high-performance nanoscale photodetectors utilizing annealed nanocrystal quantum dots (QDs) within a nanoscale metal electrode gap. By optimizing the nanogap size and fabrication process, the device demonstrates a significantly better sensitivity (noise equivalent power = 7.76×10−14 W/Hz1/2) and bandwidth ( ≥ 125 kHz) than previously reported nanoscale photodetectors. Furthermore, by utilizing a lateral photoconduction structure and a self-assembled layer of QDs, the detector fabrication is highly compatible with many substrates and device architectures.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

nanofabrication, nanostructured materials, photodetectors, self-assembly, semiconductor quantum dots, sensitivity

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3356224

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    O. Astafiev, S. Komiyama, T. Kutsuwa, V. Antonov, Y. Kawaguchi, and K. Hirakawa, Appl. Phys. Lett. 80, 4250 (2002)APPLAB000080000022004250000001.

    D. Oertel, M. Bawendi, A. Arango, and V. Bulovic, Appl. Phys. Lett. 87, 213505 (2005)APPLAB000087000021213505000001.


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