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Appl. Phys. Lett. 96, 101505 (2010); http://dx.doi.org/10.1063/1.3360228 (3 pages)

Self-organization of SiO2 nanodots deposited by chemical vapor deposition using an atmospheric pressure remote microplasma

G. Arnoult, T. Belmonte, and G. Henrion

Department of Physics and Chemistry of Solids and Surfaces, Institut Jean Lamour, Nancy-Université, CNRS, Parc de Saurupt, CS 14234, F-54042 Nancy Cedex, France

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(Received 19 January 2010; accepted 22 February 2010; published online 12 March 2010)

Self-organization of SiO2 nanodots is obtained by chemical vapor deposition out of hexamethyldisiloxane (HMDSO) and atmospheric pressure remote Ar–O2 plasma operating at high temperature (1200–1600 K). The dewetting of the film being deposited when it is still thin enough (<500 nm) is found to be partly responsible for this self-organization. When the coating becomes thicker ( ∼ 1 μm), and for relatively high contents in HMDSO, SiO2 walls forming hexagonal cells are obtained on a SiO2 sublayer. For thicker coatings (>1 μm), droplet-shaped coatings with a Gaussian distribution in thickness over their width are deposited. The coatings are submitted to high compressive stress. When it is relaxed, “nestlike structures” made of nanoribbons are synthesized.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 81.16.Dn

    Self-assembly

  • 52.77.Dq

    Plasma-based ion implantation and deposition

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 68.55.A-

    Nucleation and growth

  • 61.46.Df

    Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

  • 68.55.jd

    Thickness

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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