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Applied Physics Letters / Volume 96 / Issue 10 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 96, 101901 (2010); http://dx.doi.org/10.1063/1.3357433 (3 pages)

Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa

Network Photonics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2-1, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan

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(Received 3 February 2010; accepted 16 February 2010; published online 8 March 2010)

We demonstrated the intersubband absorption in undoped InGaAs/AlAsSb coupled double quantum wells through silicon ion implantation and rapid thermal annealing. For an implantation dose of 1×1014 cm−2, the actual carrier density of a sample annealed at 600 °C for 1 min was ∼ 7.5×1013 cm−2 ( ∼ 75% activation efficiency); the activation energy was ∼ 1.41 eV. The simultaneously generated quantum well intermixing (QWI) was nonuniform due to the silicon ion distribution. The effects of QWI nonuniformity on both intersubband and interband transitions were explained by eight-band k⋅p calculation. This study will open a route for monolithic integration of intersubband-transition-based high-speed all-optical switches.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium alloys, antimony alloys, arsenic alloys, carrier density, gallium arsenide, III-V semiconductors, indium compounds, ion implantation, monolithic integrated circuits, rapid thermal annealing, semiconductor doping, semiconductor quantum wells, semiconductor-metal boundaries, silicon

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3357433

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, Appl. Phys. Lett. 91, 221115 (2007)APPLAB000091000022221115000001.

    G. W. Cong, R. Akimoto, K. Akita, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, Phys. Rev. B 80, 035306 (2009).


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