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Applied Physics Letters / Volume 96 / Issue 10 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 103504 (2010); http://dx.doi.org/10.1063/1.3330870 (3 pages)

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

Aurélien David and Michael J. Grundmann

Philips Lumileds Lighting Company, 370 W. Trimble Rd., San Jose, California 95131, USA

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(Received 6 January 2010; accepted 2 February 2010; published online 9 March 2010)

To investigate the variation in internal quantum efficiency in InGaN structures, we measure the differential carrier lifetime of an InGaN/GaN double-heterostructure light-emitting diode under varying electroluminescence injection conditions. By coupling this measurement to an internal quantum efficiency measurement, we determine the carrier density and the radiative and nonradiative contributions to the lifetime without making any assumptions on recombination processes. We find that droop is caused by a shortening of the nonradiative lifetime with current. The observed shortening of both radiative and nonradiative lifetimes with current is found to be in excellent agreement with an ABC model including phase-space filling.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

carrier lifetime, electroluminescence, electron-hole recombination, III-V semiconductors, indium compounds, light emitting diodes, wide band gap semiconductors

PACS

  • 85.60.Jb

    Light-emitting devices

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

  • 78.60.Fi

    Electroluminescence

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3330870

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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