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8 Mar 2010

Volume 96, Issue 10, Articles (10xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 101501 (2010); http://dx.doi.org/10.1063/1.3352316 (3 pages)

Bomi Gweon, Daeyeon Kim, Dan Bee Kim, Heesoo Jung, Wonho Choe, and Jennifer H. Shin
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Electrical characterization of devices based on carbon nanotube films

Charlie Koechlin, Sylvain Maine, Riad Haidar, Brigitte Trétout, Annick Loiseau, and Jean-Luc Pelouard

Appl. Phys. Lett. 96, 103501 (2010); http://dx.doi.org/10.1063/1.3350892 (3 pages) | Cited 7 times

Online Publication Date: 9 March 2010

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Statistical study of electrical conduction on a large array of devices based on carbon nanotube films shows a weakly dispersive film conductivity, and a specific contact resistance of 1.1 10−6 Ω cm2, which is four orders of magnitude lower than previously reported values. This allows identifying the conductivity of the carbon nanotube films as driven by a fluctuation induced tunneling mechanism. Such results pave the way to the realization of optoelectronic devices, such as highly sensitive light or gas sensor arrays.
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85.35.Kt Nanotube devices
85.60.-q Optoelectronic devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks

C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers

Appl. Phys. Lett. 96, 103502 (2010); http://dx.doi.org/10.1063/1.3353993 (3 pages) | Cited 10 times

Online Publication Date: 9 March 2010

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Effective work function (EWF) changes of TiN/HfO2 annealed at low temperatures in different ambient environments are correlated with the atomic concentration of oxygen in the TiN near the metal/dielectric interface. EWF increases of 550 meV are achieved with anneals that incorporate oxygen throughout the TiN with [O] = 2.8×1021 cm−3 near the TiN/HfO2 interface. However, further increasing the oxygen concentration via more aggressive anneals results in a relative decrease of the EWF and increase in electrical thickness. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO2 interface cause the formation of dipoles that increase the EWF.
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61.72.jd Vacancies
61.72.Cc Kinetics of defect formation and annealing
71.15.-m Methods of electronic structure calculations
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)
81.65.Rv Passivation
82.45.Bb Corrosion and passivation

Proof of concept of the quantum capacitance detector

J. Bueno, M. D. Shaw, P. K. Day, and P. M. Echternach

Appl. Phys. Lett. 96, 103503 (2010); http://dx.doi.org/10.1063/1.3339163 (3 pages) | Cited 3 times

Online Publication Date: 9 March 2010

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We fabricated and tested a proof-of-concept quantum capacitance detector, a superconducting radiation detector described in a recent publication [ Shaw et al., Phys. Rev. B 79, 144511 (2009) ]. In this concept, quasiparticle tunneling in a single Cooper-pair box is used to measure the density of quasiparticles in a superconducting absorber. We measured and characterized the response of the device to electrical quasiparticle injection obtaining its sensitivity. Moreover, we have converted the sensitivity to electrical noise-equivalent power, which is in the 10−18 W/Hz1/2 range at loading powers between 10−15–10−16 W.
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85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.25.Cp Josephson devices

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

Aurélien David and Michael J. Grundmann

Appl. Phys. Lett. 96, 103504 (2010); http://dx.doi.org/10.1063/1.3330870 (3 pages) | Cited 36 times

Online Publication Date: 9 March 2010

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To investigate the variation in internal quantum efficiency in InGaN structures, we measure the differential carrier lifetime of an InGaN/GaN double-heterostructure light-emitting diode under varying electroluminescence injection conditions. By coupling this measurement to an internal quantum efficiency measurement, we determine the carrier density and the radiative and nonradiative contributions to the lifetime without making any assumptions on recombination processes. We find that droop is caused by a shortening of the nonradiative lifetime with current. The observed shortening of both radiative and nonradiative lifetimes with current is found to be in excellent agreement with an ABC model including phase-space filling.
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85.60.Jb Light-emitting devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.60.Fi Electroluminescence

Critical oxygen concentration in hydrogenated amorphous silicon solar cells dependent on the contamination source

Jan Woerdenweber, Tsvetelina Merdzhanova, Helmut Stiebig, Wolfhard Beyer, and Aad Gordijn

Appl. Phys. Lett. 96, 103505 (2010); http://dx.doi.org/10.1063/1.3357424 (3 pages) | Cited 6 times

Online Publication Date: 9 March 2010

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For hydrogenated amorphous silicon (a-Si:H) solar cells, the critical concentration of a given impurity defines the lowest concentration which causes a decay of solar cell efficiency. Values of 2–5×1019 cm−3 are commonly found for the critical oxygen concentration (COcrit) of a-Si:H. Here we report a dependence of COcrit on the contamination source. For state-of-the-art a-Si:H solar cells prepared at the same plasma deposition conditions, we obtain with a (controllable) chamber wall leak COcrit ∼ 2×1019 cm−3 while for a leak in the gas supply line a higher COcrit of ∼ 2×1020 cm−3 is measured. No such dependence is observed for nitrogen.
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88.40.jj Silicon solar cells
81.05.Cy Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Dq Plasma-based ion implantation and deposition
61.72.uf Ge and Si
88.40.H- Solar cells (photovoltaics)

Fluorinated HfO2 gate dielectric engineering on In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Yen-Ting Chen, Han Zhao, Yanzhen Wang, Fei Xue, Fei Zhou, and Jack C. Lee

Appl. Phys. Lett. 96, 103506 (2010); http://dx.doi.org/10.1063/1.3357434 (3 pages) | Cited 7 times

Online Publication Date: 9 March 2010

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In this work, we demonstrate that the electrical performance of HfO2/In0.53Ga0.47As gate stack can be greatly improved by incorporating fluorine (F) and engineering its concentration depth profile with respect to HfO2 bulk and the HfO2/In0.53Ga0.47As interface. We introduce F into gate stacks in two ways: CF4 plasma treatment has been performed after 8 nm HfO2 deposition or after partial deposition of HfO2 4 nm and followed by 4 nm HfO2 deposition to make the overall thickness 8 nm. The latter one incorporates more F into the HfO2 and shows great improvements. Fluorine is believed to reduce fixed charge by forming Hf–F bonds in the HfO2 bulk and also passivate the interface traps in the HfO2/In0.53Ga0.47As interface.
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85.30.Tv Field effect devices
82.45.Un Dielectric materials in electrochemistry

A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes

Chun Gong, Eddy Simoen, Niels Posthuma, Emmanuel Van Kerschaver, Jef Poortmans, and Robert Mertens

Appl. Phys. Lett. 96, 103507 (2010); http://dx.doi.org/10.1063/1.3358140 (3 pages) | Cited 7 times

Online Publication Date: 11 March 2010

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Low frequency direct plasma-enhanced chemical vapor deposited Si–SiNx interface properties with and without NH3 plasma pretreatment, with and without rapid thermal annealing (RTA) have been investigated with deep-level transient spectroscopy (DLTS) on both n- and p-type monocrystalline silicon samples. It is shown that four different defect states are identified at the Si–SiNx interface. Energy-dependent electron and hole capture cross sections were also measured by small-pulse DLTS. Samples with plasma NH3 pretreatment and RTA show the lowest DLTS signals, which suggest the lowest overall interface states density. Moreover, SiNx with RTA passivates interface states more efficiently in n-type Si compared with p-type Si; also the deep-level parameters change in n-type Si but not in p-type Si. The combination of plasma NH3 pretreatment and RTA is suggested for application in the solar cell fabrication.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species

Amplified spontaneous emission in the cyano-substituted oligo(p-phenylenevinylene) organic crystals: Effect of excitation wavelength

Hong-Hua Fang, Qi-Dai Chen, Jie Yang, Lei Wang, Ying Jiang, Hong Xia, Jing Feng, Yu-Guang Ma, Hai-Yu Wang, and Hong-Bo Sun

Appl. Phys. Lett. 96, 103508 (2010); http://dx.doi.org/10.1063/1.3359848 (3 pages) | Cited 8 times

Online Publication Date: 12 March 2010

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We report an unusual phenomenon in amplified spontaneous emission (ASE) from cyano-substituted oligo(p-pheny lenevinylene) (CNDPASDB) single crystals, i.e., the ASE peak wavelength, exhibits varied dependence on the pumping wavelength λex. The former is basically kept a constant when λex<505 nm, while a rapid redshift from 560 to 572 nm occurs when λex>505 nm. The observation is different from stimulated Raman resonant scattering (SRRS) in two following aspects: the nonconstant Stokes shift and a much broader emission linewidth. A model describing competition between the stimulated emission and vibration relaxations has been proposed to interpret the underlying mechanism.
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78.45.+h Stimulated emission
78.55.Kz Solid organic materials
78.30.Jw Organic compounds, polymers
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