APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

8 Mar 2010

Volume 96, Issue 10, Articles (10xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 101501 (2010); http://dx.doi.org/10.1063/1.3352316 (3 pages)

Bomi Gweon, Daeyeon Kim, Dan Bee Kim, Heesoo Jung, Wonho Choe, and Jennifer H. Shin
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Strain relaxation in epitaxial (Pb,Sr)TiO3 thin films on NdGaO3 substrates

Y. Lin, C. Dai, Y. R. Li, X. Chen, C. L. Chen, A. Bhalla, and Q. X. Jia

Appl. Phys. Lett. 96, 102901 (2010); http://dx.doi.org/10.1063/1.3357435 (3 pages) | Cited 4 times

Online Publication Date: 8 March 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Strain relaxation behavior of (Pb,Sr)TiO3 thin films on (110) NdGaO3 substrates fabricated under different conditions have been investigated using high resolution x-ray diffraction. Dislocation densities and interfacial strain distribution have been systematically studied with samples in different postdeposition cooling rates. Strain relaxation and dislocation evolution are found to be dependent upon the cooling process. The relationship of dielectric properties and the strain and dislocations of the films were discussed.
Show PACS
81.40.Jj Elasticity and anelasticity, stress-strain relations
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Cg PZT ceramics and other titanates
68.60.Bs Mechanical and acoustical properties
77.55.Px Epitaxial and superlattice films
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Thermally mediated multiferroic composites for the magnetoelectric materials

S. G. Lu, Z. Fang, E. Furman, Y. Wang, Q. M. Zhang, Y. Mudryk, K. A. Gschneidner, V. K. Pecharsky, and C. W. Nan

Appl. Phys. Lett. 96, 102902 (2010); http://dx.doi.org/10.1063/1.3358133 (3 pages) | Cited 5 times

Online Publication Date: 9 March 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A magnetoelectric (ME) composite through thermal mediation is presented, which is different from the traditional strain/stress mediated ME composites. The ME laminate uses the large magnetocaloric effect, that is, a temperature change induced in the ferromagnetic Gd crystal by a magnetic field, and a large pyroelectric response in the relaxor ferroelectric polymer. Consequently, a simple laminate composite can produce a ME response ∼ 0.5 V/(cm Oe). The ME coefficient was further enhanced to ∼ 0.9 V/(cm Oe) by exploiting the magnetic flux concentration effect. The approach opens up an avenue in developing ME materials for broad range of applications.
Show PACS
77.55.Nv Multiferroic/magnetoelectric films
77.80.Jk Relaxor ferroelectrics
75.85.+t Magnetoelectric effects, multiferroics
75.30.Sg Magnetocaloric effect, magnetic cooling
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.70.+a Pyroelectric and electrocaloric effects

Intrinsic electrocaloric effects in ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymers: Roles of order of phase transition and stresses

B. Li, W. J. Ren, X. W. Wang, H. Meng, X. G. Liu, Z. J. Wang, and Z. D. Zhang

Appl. Phys. Lett. 96, 102903 (2010); http://dx.doi.org/10.1063/1.3353989 (3 pages) | Cited 12 times

Online Publication Date: 9 March 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electrocaloric effects accompanied with the ferroelectric to paraelectric phase transitions in poly(vinylidene fluoride-trifluoroethylene) are investigated within the Landau–Devonshire theory. Just changing the nature of the phase transition from the first-order to the second-order reduces the isothermal entropy change, adiabatic temperature change and refrigerant capacity. The isothermal entropy change in the second-order transition is about one half of that in the first-order one, which is confirmed by experiments and is also consistent with the magnetocaloric counterpart. Converting to be film also leads to the reduction in electrocaloric effects, generally ascribed to the decrease of pyroelectric coefficients.
Show PACS
77.70.+a Pyroelectric and electrocaloric effects
77.80.-e Ferroelectricity and antiferroelectricity
71.70.Di Landau levels
61.41.+e Polymers, elastomers, and plastics
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
65.40.gd Entropy

A high-k Tb2TiO5 nanocrystal memory

Tung-Ming Pan, Fa-Hsyang Chen, and Ji-Shing Jung

Appl. Phys. Lett. 96, 102904 (2010); http://dx.doi.org/10.1063/1.3354027 (3 pages) | Cited 5 times

Online Publication Date: 9 March 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this letter, a metal-oxide-high-k-oxide-silicon (MOHOS) memory structure incorporating a high-k Tb2TiO5 nanocrystal film as the charge trapping layer is reported for nonvolatile memory application. The structural and morphological features of these films were explored by x-ray diffraction, transmission electron microscopic, atomic force microscopy, and x-ray photoelectron spectroscopic. The Tb2TiO5 MOHOS-type memory annealed 800 °C exhibited large threshold voltage shifting (memory window of 2.9 V) and long data retention (charge loss of ∼ 15 % after ten years for programmed state at room temperature). These results are attributed to the higher probability for trapping the charge carrier due to the formation of a well-crystallized Tb2TiO5 nanocrystal structure with a higher dielectric constant.
Show PACS
84.30.Sk Pulse and digital circuits
77.55.df For silicon electronics
85.30.Tv Field effect devices
68.37.Ps Atomic force microscopy (AFM)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.72.Cc Kinetics of defect formation and annealing

Experimental evidence for orientation property of Pb(Zr0.35Ti0.65)O3 by manipulating polar axis angle using CaF2 substrate

Satoru Utsugi, Takashi Fujisawa, Yoshitaka Ehara, Tomoaki Yamada, Masaaki Matsushima, Hitoshi Morioka, and Hiroshi Funakubo

Appl. Phys. Lett. 96, 102905 (2010); http://dx.doi.org/10.1063/1.3357421 (3 pages) | Cited 6 times

Online Publication Date: 9 March 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Perfectly oriented (001), (101), and (111) Pb(Zr0.35Ti0.65)O3 (PZT) films were grown on identical (111)CaF2 substrates by metal-organic chemical vapor deposition. These films exclude domains parallel to the surface; therefore, all domains are actively switchable under the electric field between top and bottom electrodes. Saturation polarization values, Psat(001), Psat(101), and Psat(111), for these PZT films were 75, 50, and 43 μC/cm2, respectively. This orientation dependency was in a good agreement with the theoretical relationship for a tetragonal PZT single crystal, where Psat(001) = Psat(101)/math = Psat(111)/math.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
68.55.J- Morphology of films

Unipolar and bipolar fatigue in antiferroelectric lead zirconate thin films and evidences for switching-induced charge injection inducing fatigue

X. J. Lou and J. Wang

Appl. Phys. Lett. 96, 102906 (2010); http://dx.doi.org/10.1063/1.3358138 (3 pages) | Cited 2 times

Online Publication Date: 11 March 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We show that unipolar fatigue does occur in antiferroelectric capacitors, confirming the predictions of a previous work [ Appl. Phys. Lett. 94, 072901 (2009) ]. We also show that unipolar fatigue in antiferroelectrics is less severe than bipolar fatigue if the driving field is of the same magnitude. This phenomenon has been attributed to the switching-induced charge injection, the main cause for polarization fatigue in ferroelectric and antiferroelectric materials. Other evidences for polarization fatigue caused by the switching-induced charge injection from the nearby electrode rather than the charge injection during the stable/quasistable leakage current stage are also discussed.
Show PACS
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
77.84.Cg PZT ceramics and other titanates

Giant flexoelectricity in bent-core nematic liquid crystal elastomers

J. Harden, M. Chambers, R. Verduzco, P. Luchette, J. T. Gleeson, S. Sprunt, and A. Jákli

Appl. Phys. Lett. 96, 102907 (2010); http://dx.doi.org/10.1063/1.3358391 (3 pages) | Cited 10 times

Online Publication Date: 11 March 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Recently ferroelectric ceramic and bent-core nematic liquid crystals have demonstrated flexoelectricity (coupling between curvature strains to electric polarization) up to 104 times larger than the previous standards. This may allow for usable electromechanical devices. However, ceramics are too rigid to withstand large bending and bent-core nematic fluids must be physically supported—their technological applicability is still limited. In this paper, we show that novel side-chain bent-core nematic elastomers not only produce giant flexoelectricity but are also robust and flexible enough for microscale parasitic power generation.
Show PACS
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
77.65.-j Piezoelectricity and electromechanical effects

Effect of gate dielectrics on the device performance of SnO2 nanowire field effect transistors

Hyun Hee Park, Pil Soo Kang, Gyu Tae Kim, and Jeong Sook Ha

Appl. Phys. Lett. 96, 102908 (2010); http://dx.doi.org/10.1063/1.3357432 (3 pages) | Cited 2 times

Online Publication Date: 11 March 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of the gate dielectric materials on the device performance of SnO2 nanowire field effect transistors (FETs) was investigated. The usage of Al-doped TiO2 layer with a large dielectric constant, whose atomic layer deposition process was optimized based on a serially connected capacitor model, enhanced the device performance with lower operation voltages compared to those of SiO2 or Al2O3 film in an accumulated channel. The higher dielectric constant is attributed to give a lower threshold voltage and a smaller subthreshold slope, which will be useful for the low voltage operation of the nanowire FETs.
Show PACS
85.30.Tv Field effect devices
82.45.Un Dielectric materials in electrochemistry
81.07.Gf Nanowires
84.32.Tt Capacitors

Pressure effects on multiferroic LuFe2O4

X. Shen, C. H. Xu, C. H. Li, Y. Zhang, Q. Zhao, H. X. Yang, Y. Sun, J. Q. Li, C. Q. Jin, and R. C. Yu

Appl. Phys. Lett. 96, 102909 (2010); http://dx.doi.org/10.1063/1.3360211 (3 pages) | Cited 4 times

Online Publication Date: 12 March 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter reports that both ac susceptibility and electronic transport measurements of the multiferroic compound LuFe2O4 under pressure show that the transition temperature from the paramagnetic state to the ferrimagnetic state decreases with increasing pressure, indicating that the pressure favors the paramagnetic state and suppresses the ferrimagnetic state. Moreover, the minimum of resistivity changes under pressure, which decreases with increasing pressure, appears at the magnetic phase transition temperature.
Show PACS
75.85.+t Magnetoelectric effects, multiferroics
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
77.80.B- Phase transitions and Curie point
75.30.Cr Saturation moments and magnetic susceptibilities
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
62.50.-p High-pressure effects in solids and liquids

Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces

Yoontae Hwang, Roman Engel-Herbert, Nicholas G. Rudawski, and Susanne Stemmer

Appl. Phys. Lett. 96, 102910 (2010); http://dx.doi.org/10.1063/1.3360221 (3 pages) | Cited 25 times

Online Publication Date: 12 March 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
HfO2 was deposited on n- and p-type In0.53Ga0.47As by chemical beam deposition. Interface trap densities (Dit) and their energy level distribution were quantified using the conductance method in a wide temperature range (77 to 300 K). A trap level close to the intrinsic energy level caused the Dit to rise above 1013 cm−2 eV−1. The trap level at midgap gives rise to false inversion behavior in the capacitance-voltage curves for n-type channels at room temperature. The apparent decrease of the Dit close to the band edges is discussed.
Show PACS
73.20.Qt Electron solids
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.A- Nucleation and growth
73.40.-c Electronic transport in interface structures
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close