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Applied Physics Letters / Volume 96 / Issue 11 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 112103 (2010); http://dx.doi.org/10.1063/1.3364139 (3 pages)

Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature

B. N. Szafranek, D. Schall, M. Otto, D. Neumaier, and H. Kurz

Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Otto-Blumenthal-Strasse 25, 52074 Aachen, Germany

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(Received 29 January 2010; accepted 24 February 2010; published online 17 March 2010)

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using complementary metal-oxide semiconductor (CMOS)-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ∼ 50 meV. This demonstrates the potential of bilayer graphene as channel material for a field-effect transistor in a conventional CMOS environment.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

CMOS integrated circuits, electronic density of states, field effect transistors, graphene, nanofabrication, nanostructured materials

PACS

  • 71.20.Tx

    Fullerenes and related materials; intercalation compounds

  • 73.22.Pr

    Electronic structure of graphene

  • 78.67.Wj

    Optical properties of graphene

  • 72.80.Vp

    Electronic transport in graphene

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3364139

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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