APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 96 / Issue 11 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 113501 (2010); http://dx.doi.org/10.1063/1.3327829 (3 pages)

Scanning gate microscopy of current-annealed single layer graphene

M. R. Connolly1, K. L. Chiou1, C. G. Smith1, D. Anderson1, G. A. C. Jones1, A. Lombardo2,3, A. Fasoli3, and A. C. Ferrari3

1Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
2Universitá degli Studi di Palermo, Dipartimento di Ingegneria Elettrica, Elettronica e delle Telecomunicazioni, Viale delle Scienze, 90128 Palermo, Italy
3Department of Engineering, University of Cambridge, Cambridge CB3 OFA, United Kingdom

View MapView Map

(Received 18 November 2009; accepted 29 January 2010; published online 15 March 2010)

We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole-doped domain close to one of the metal contacts combined with underlying striations in the local NP.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

annealing, current density, electrical conductivity, electron-hole recombination, graphene, scanning probe microscopy

PACS

  • 73.61.Wp

    Fullerenes and related materials

  • 72.80.Vp

    Electronic transport in graphene

  • 61.72.Cc

    Kinetics of defect formation and annealing

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3327829

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    M. Y. Han, B. Ozyilmaz, Y. Zhang, and P. Kim, Phys. Rev. Lett. 98, 206805 (2007).

    B. Özyilmaz, P. Jarillo-Herrero, D. Efetov, and P. Kim, Appl. Phys. Lett. 91, 192107 (2007)APPLAB000091000019192107000001.

    F. Cervantes-Sodi, G. Csanyi, S. Piscanec, and A. C. Ferrari, Phys. Rev. B 77, 165427 (2008).

    A. Deshpande, W. Bao, F. Miao, C. N. Lau, and B. J. LeRoy, Phys. Rev. B 79, 205411 (2009).

    T. Mueller, F. Xia, M. Freitag, J. Tsang, and P. Avouris, Phys. Rev. B 79, 245430 (2009).

    C. Casiraghi, S. Pisana, K. S. Novoselov, A. K. Geim, and A. C. Ferrari, Appl. Phys. Lett. 91, 233108 (2007)APPLAB000091000023233108000001.

    C. Stampfer, F. Molitor, D. Graf, K. Ensslin, A. Jungen, C. Hierold, and L. Wirtz, Appl. Phys. Lett. 91, 241907 (2007)APPLAB000091000024241907000001.

    L. A. Ponomarenko, R. Yang, T. M. Mohiuddin, M. I. Katsnelson, K. S. Novoselov, S. V. Morozov, A. A. Zhukov, F. Schedin, E. W. Hill, and A. K. Geim, Phys. Rev. Lett. 102, 206603 (2009).

    J. Moser, A. Barriero, and A. Bachtold, Appl. Phys. Lett. 91, 163513 (2007)APPLAB000091000016163513000001.

    A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, and A. K. Geim, Phys. Rev. Lett. 97, 187401 (2006).

    D. B. Farmer, Y. -M. Lin, A. Afzali-Ardakani, and P. Avouris, Appl. Phys. Lett. 94, 213106 (2009)APPLAB000094000021213106000001.

    E. Rossi, S. Adam, and S. D. Sarma, Phys. Rev. B 79, 245423 (2009).


For access to citing articles, you need to log in.


Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Scanning gate microscopy of current-annealed single layer graphene
  2. Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature
  3. Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
  4. Proof of concept of the quantum capacitance detector
  5. Readout for phase qubits without Josephson junctions
Go to AIP Home
Copyright © American Institute of Physics
close