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Applied Physics Letters / Volume 96 / Issue 11 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 113510 (2010); http://dx.doi.org/10.1063/1.3365241 (3 pages)

Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on HfO2 high-K dielectric

L. Wu1, H. Y. Yu1, X. Li1, K. L. Pey1, J. S. Pan2, J. W. Chai2, Y. S. Chiu3, C. T. Lin3, J. H. Xu3, H. J. Wann3, X. F. Yu3, D. Y. Lee3, K. Y. Hsu3, and H. J. Tao3

1School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
2Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore
3TSMC ROC, 8, Li-Shin Rd., 6 Hsinchu, Taiwan

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(Received 4 February 2010; accepted 25 February 2010; published online 18 March 2010)

In this paper, the thermal stability of TiN metal gate with various composition prepared by different preparation technology [(e.g., atomic layer deposition (ALD) or physical vapor deposition (PVD)] on HfO2 high-K dielectric is investigated and compared by physical and electrical analysis. After annealing of the TiN/HfO2 stack at 1000 °C for 30 s, it is observed that: (1) Nitrogen tends to out-diffuse from TiN for all the samples; (2) Oxygen from the interfacial layer (IL) between HfO2 and Si tends to diffuse toward TiN. PVD Ti-rich TiN shows a wider oxygen distribution in the gate stack, and a thinner IL than the N-rich sample. Ti penetration into HfO2 is also observed in the Ti-rich sample, which can potentially lead to the dielectric break-down. Besides, the oxygen out-diffusion can be significantly suppressed for ALD TiN compared to the PVD TiN samples.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, atomic layer deposition, diffusion, electric breakdown, hafnium compounds, high-k dielectric thin films, thermal stability, titanium compounds, X-ray photoelectron spectra

PACS

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 77.22.Jp

    Dielectric breakdown and space-charge effects

  • 81.40.Gh

    Other heat and thermomechanical treatments

  • 79.60.Dp

    Adsorbed layers and thin films

  • 68.55.ag

    Semiconductors

  • 77.55.D-

    High-permittivity gate dielectric films

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3365241

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Y. Sugimoto, M. Kajiwara, K. Yamamoto, Y. Suehiro, D. Wang, and H. Nakashima, Appl. Phys. Lett. 91, 112105 (2007)APPLAB000091000011112105000001.

    H. Kim, P. C. Mclntyre, C. O. Chui, K. C. Saraswat, and S. Stemmer, J. Appl. Phys. 96, 3467 (2004)JAPIAU000096000006003467000001.

    K. Kita and A. Toriumi, Appl. Phys. Lett. 94, 132902 (2009)APPLAB000094000013132902000001.


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