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15 Mar 2010

Volume 96, Issue 11, Articles (11xxxx)

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Appl. Phys. Lett. 96, 111901 (2010); http://dx.doi.org/10.1063/1.3358107 (3 pages)

B. Rožič, S. Krause, H. Finkelmann, G. Cordoyiannis, and Z. Kutnjak
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Physical and electrical characteristics of the high-k Ta2O5 (tantalum pentoxide) dielectric deposited on the polycrystalline silicon

Chyuan-Haur Kao, Hsiang Chen, Jing Sing Chiu, Kung Shao Chen, and Yu Tsung Pan

Appl. Phys. Lett. 96, 112901 (2010); http://dx.doi.org/10.1063/1.3334725 (3 pages) | Cited 8 times

Online Publication Date: 15 March 2010

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The high-k Ta2O5 films deposited on the polycrystalline silicon treated with different postrapid thermal annealing temperatures were formed as high-k interdielectrics. Physical and electrical characteristics of the Ta2O5 dielectrics were investigated with x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, and electrical analysis. The annealing at 800 °C was found to be the optimal condition to reduce the defects and interface traps existed in the interface between the Ta2O5 dielectric and polysilicon to fabricate a well-crystallized film with higher breakdown field, lower leakage current and smaller charge trapping rate. This Ta2O5 dielectric shows promise for future generation of nonvolatile memory.
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77.55.-g Dielectric thin films
68.60.Wm Other nonelectronic physical properties
73.61.Ng Insulators
79.60.Dp Adsorbed layers and thin films
64.70.K- Solid-solid transitions
81.40.Gh Other heat and thermomechanical treatments

Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology

Po-Tsun Liu, Chen-Shuo Huang, Yi-Ling Huang, Jing-Ru Lin, Szu-Lin Cheng, Yoshio Nishi, and S. M. Sze

Appl. Phys. Lett. 96, 112902 (2010); http://dx.doi.org/10.1063/1.3365177 (3 pages)

Online Publication Date: 17 March 2010

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Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO2/germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO2/Ge interface at 150 °C. A smooth interfacial GeO2 layer between gate SiO2 and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 °C can be restored to a extent similar to the initial state.
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85.30.-z Semiconductor devices
81.65.Mq Oxidation
61.72.Cc Kinetics of defect formation and annealing

Anisotropy of domain growth in epitaxial ferroelectric capacitors

D. Wu, I. Vrejoiu, M. Alexe, and A. Gruverman

Appl. Phys. Lett. 96, 112903 (2010); http://dx.doi.org/10.1063/1.3366724 (3 pages) | Cited 9 times

Online Publication Date: 17 March 2010

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Piezoresponse force microscopy (PFM) has been applied to investigate the switching kinetics in microscale epitaxial Pb(Zr,Ti)O3 capacitors. It is shown that transition from low to high field range brings about a qualitative change in domain growth kinetics, namely, laterally isotropic growth in the high fields as opposed to highly anisotropic growth in the low fields. It is suggested that anisotropy of domain growth can be attributed to orientational variations in the activation energy due to film microstructure. Fitting the switching kinetics using the Kolmogorov–Avrami–Ishibashi model shows excellent agreement with the PFM experimental data and yields the integer values of domain dimensionality.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors

Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell

Seul Ji Song, Kyung Min Kim, Gun Hwan Kim, Min Hwan Lee, Jun Yeong Seok, Ranju Jung, and Cheol Seong Hwang

Appl. Phys. Lett. 96, 112904 (2010); http://dx.doi.org/10.1063/1.3355415 (3 pages) | Cited 14 times

Online Publication Date: 18 March 2010

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This study examined the parameter controlling the set-state resistance (Rset) of a Pt/TiO2/Pt resistive switching (RS) cell in unipolar RS mode. Although the compliance current in the current-voltage sweep had some effect on the Rset, the uncontrolled flow of charge from the parametric analyzer prevented making an accurate estimation of the parameters. The current transient in pulse switching observed using a high-speed digital oscilloscope and physical modeling showed that the capacitive charge moves vigorously at the moment of on-switching, and Rset is governed by the level of migrating charge. The actual switching time was ⪡50 ns.
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73.40.Rw Metal-insulator-metal structures

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

Rahul Suri, Daniel J. Lichtenwalner, and Veena Misra

Appl. Phys. Lett. 96, 112905 (2010); http://dx.doi.org/10.1063/1.3357422 (3 pages) | Cited 12 times

Online Publication Date: 18 March 2010

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The reduction in native oxides on GaAs surface during atomic layer deposition (ALD) of HfO2 using tetrakis-dimethylamino-hafnium precursor was investigated using x-ray photoelectron spectroscopy. The role of the ALD growth temperature on the reaction between surface oxides and precursor was studied. Interfacial oxide reduction was found to be insignificant for ALD at 200 °C, while nearly complete for growth at 300 °C. During postdeposition annealing at 400 °C, any arsenic oxides present were found to decompose, resulting in an increase in the interfacial gallium oxides. Thus, control of the ALD process plays a large role in determining interface properties.
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81.65.Cf Surface cleaning, etching, patterning
77.55.D- High-permittivity gate dielectric films
61.72.Cc Kinetics of defect formation and annealing
79.60.Dp Adsorbed layers and thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.aj Insulators

Local measurements of Preisach density in polycrystalline ferroelectric capacitors using piezoresponse force spectroscopy

O. Ovchinnikov, S. Jesse, S. Guo, K. Seal, P. Bintachitt, I. Fujii, S. Trolier-McKinstry, and S. V. Kalinin

Appl. Phys. Lett. 96, 112906 (2010); http://dx.doi.org/10.1063/1.3360220 (3 pages) | Cited 4 times

Online Publication Date: 18 March 2010

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Polarization switching in polycrystalline ferroelectric capacitors is explored using piezoresponse force microscopy (PFM) based first-order reversal curve (FORC) measurements. The band excitation method facilitates decoupling the electromechanical responses from variations in surface elastic properties. A simulated annealing method is developed to estimate the Preisach densities from PFM FORC data. Microscopic and macroscopic Preisach densities are compared, illustrating good agreement between the two.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.65.-j Piezoelectricity and electromechanical effects

Frequency dependent electrical measurements of amorphous GeSbSe chalcogenide thin films

M. Mirsaneh, E. Furman, J. V. Ryan, M. T. Lanagan, and C. G. Pantano

Appl. Phys. Lett. 96, 112907 (2010); http://dx.doi.org/10.1063/1.3360225 (3 pages) | Cited 1 time

Online Publication Date: 18 March 2010

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A commercial bulk chalcogenide glass (Ge28Sb12Se60) was used as a source to fabricate amorphous thin films via thermal evaporation technique. At low frequencies (<1 MHz) impedance spectroscopy was performed to measure electrical properties. To measure ac conductivity at microwave frequencies, a split resonance cavity technique was applied for which a model based on parallel arrangement of substrate and film capacitors was developed. This model was used to extract tan δ and ac conductivity of the films. Microwave ac conductivity was correlated with the extrapolated low frequency conductivity data confirming applicability of the universal law commonly observed in amorphous semiconductors.
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73.61.Jc Amorphous semiconductors; glasses
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