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15 Mar 2010

Volume 96, Issue 11, Articles (11xxxx)

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Appl. Phys. Lett. 96, 111901 (2010); http://dx.doi.org/10.1063/1.3358107 (3 pages)

B. Rožič, S. Krause, H. Finkelmann, G. Cordoyiannis, and Z. Kutnjak
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Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3

N. M. Terlinden, G. Dingemans, M. C. M van de Sanden, and W. M. M. Kessels

Appl. Phys. Lett. 96, 112101 (2010); http://dx.doi.org/10.1063/1.3334729 (3 pages) | Cited 17 times

Online Publication Date: 15 March 2010

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Al2O3 synthesized by plasma-assisted atomic layer deposition yields excellent surface passivation of crystalline silicon (c-Si) for films down to ∼ 5 nm in thickness. Optical second-harmonic generation was employed to distinguish between the influence of field-effect passivation and chemical passivation through the measurement of the electric field in the c-Si space-charge region. It is demonstrated that this electric field—and hence the negative fixed charge density—is virtually unaffected by the Al2O3 thickness between 2 and 20 nm indicating that a decrease in chemical passivation causes the reduced passivation performance for <5 nm thick Al2O3 films.
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81.65.Rv Passivation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors

J. Noborisaka, K. Nishiguchi, H. Kageshima, Y. Ono, and A. Fujiwara

Appl. Phys. Lett. 96, 112102 (2010); http://dx.doi.org/10.1063/1.3360224 (3 pages) | Cited 2 times

Online Publication Date: 17 March 2010

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We report the tunneling spectroscopy of thin silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors with tunneling gate oxide. When electrons are injected into a thin SOI well, the gate-tunneling current shows kink structures originating from quantized energy levels in the SOI well. From the theoretical consideration of the energy levels and their density of states, the observed features can be ascribed to electron tunneling into the in-plane fourfold degenerate valley subbands. Furthermore, inhomogeneous peak broadening of the kink structures in the experiment is well explained by the SOI thickness variation.
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85.30.Tv Field effect devices

Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature

B. N. Szafranek, D. Schall, M. Otto, D. Neumaier, and H. Kurz

Appl. Phys. Lett. 96, 112103 (2010); http://dx.doi.org/10.1063/1.3364139 (3 pages) | Cited 23 times

Online Publication Date: 17 March 2010

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We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using complementary metal-oxide semiconductor (CMOS)-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ∼ 50 meV. This demonstrates the potential of bilayer graphene as channel material for a field-effect transistor in a conventional CMOS environment.
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71.20.Tx Fullerenes and related materials; intercalation compounds
73.22.Pr Electronic structure of graphene
78.67.Wj Optical properties of graphene
72.80.Vp Electronic transport in graphene

AlGaAs/GaAs single electron transistor fabricated without modulation doping

A. M. See, O. Klochan, A. R. Hamilton, A. P. Micolich, M. Aagesen, and P. E. Lindelof

Appl. Phys. Lett. 96, 112104 (2010); http://dx.doi.org/10.1063/1.3358388 (3 pages) | Cited 7 times

Online Publication Date: 19 March 2010

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We have fabricated a quantum dot single electron transistor, based on AlGaAs/GaAs heterojunction without modulation doping, which exhibits clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade peak line shape is well described by standard Coulomb blockade theory in the quantum regime. Bias spectroscopy measurements have allowed us to directly extract the charging energy, and showed clear evidence of excited state transport, confirming that individual quantum states in the dot can be resolved.
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81.07.Ta Quantum dots
85.35.Gv Single electron devices
85.35.Ds Quantum interference devices
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