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15 Mar 2010

Volume 96, Issue 11, Articles (11xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 111901 (2010); http://dx.doi.org/10.1063/1.3358107 (3 pages)

B. Rožič, S. Krause, H. Finkelmann, G. Cordoyiannis, and Z. Kutnjak
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Strain-driven alignment of In nanocrystals on InGaAs quantum dot arrays and coupled plasmon-quantum dot emission

A. Urbańczyk, G. J. Hamhuis, and R. Nötzel

Appl. Phys. Lett. 96, 113101 (2010); http://dx.doi.org/10.1063/1.3358122 (3 pages) | Cited 9 times

Online Publication Date: 15 March 2010

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We report the alignment of In nanocrystals on top of linear InGaAs quantum dot (QD) arrays formed by self-organized anisotropic strain engineering on GaAs (100) by molecular beam epitaxy. The alignment is independent of a thin GaAs cap layer on the QDs revealing its origin is due to local strain recognition. This enables nanometer-scale precise lateral and vertical site registration between the QDs and the In nanocrystals and arrays in a single self-organizing formation process. The plasmon resonance of the In nanocrystals overlaps with the high-energy side of the QD emission leading to clear modification of the QD emission spectrum.
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73.21.La Quantum dots
68.55.ag Semiconductors
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
81.07.Ta Quantum dots
81.16.Dn Self-assembly
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

A direct transfer of layer-area graphene

William Regan, Nasim Alem, Benjamín Alemán, Baisong Geng, Çağlar Girit, Lorenzo Maserati, Feng Wang, Michael Crommie, and A. Zettl

Appl. Phys. Lett. 96, 113102 (2010); http://dx.doi.org/10.1063/1.3337091 (3 pages) | Cited 33 times

Online Publication Date: 15 March 2010

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A facile method is reported for the direct (polymer-free) transfer of layer-area graphene from metal growth substrates to selected target substrates. The direct route, by avoiding several wet chemical steps and accompanying mechanical stresses and contamination common to all presently reported layer-area graphene transfer methods, enables fabrication of layer-area graphene devices with unprecedented quality. To demonstrate, we directly transfer layer-area graphene from Cu growth substrates to holey amorphous carbon transmission electron microscopy (TEM) grids, resulting in robust, clean, full-coverage graphene grids ideal for high resolution TEM.
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81.05.ue Graphene
68.65.Pq Graphene films

The gain effect in a magnetic plasmon waveguide

Shuming Wang, Zhihong Zhu, Jingxiao Cao, Tao Li, Hui Liu, Shining Zhu, and Xiang Zhang

Appl. Phys. Lett. 96, 113103 (2010); http://dx.doi.org/10.1063/1.3365179 (3 pages) | Cited 4 times

Online Publication Date: 16 March 2010

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Loss is a crucial problem in plasmonic integrated optical circuits and metamaterials. The Er, Yb codoped gain material is introduced into a magnetic plasmon waveguide composed of a chain of nanosandwiches in order to solve the loss problem in such subwavelength waveguide. The magnetic plasmon mode and a higher order mode are chosen as the signal and pump light to enhance the radiation and pump efficiencies. The signal light propagating in the waveguide is investigated with different Er3+ doping concentration and signal decay time. It is shown that the gain effect cannot only compensate the loss but also is able to amplify the signal, when exceeding certain threshold values of doping concentration and signal decay time.
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42.82.Et Waveguides, couplers, and arrays
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.Bz Metals and metallic alloys
81.05.Xj Metamaterials for chiral, bianisotropic and other complex media

Radiation emission from wrinkled SiGe/SiGe nanostructure

A. I. Fedorchenko, H. H. Cheng, G. Sun, and R. A. Soref

Appl. Phys. Lett. 96, 113104 (2010); http://dx.doi.org/10.1063/1.3360881 (3 pages) | Cited 4 times

Online Publication Date: 16 March 2010

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Semiconductor optical emitters radiate light via band-to-band optical transitions. Here, a different mechanism of radiation emission, which is not related to the energy band of the materials, is proposed. In the case of carriers traveling along a sinusoidal trajectory through a wrinkled nanostructure, radiation was emitted via changes in their velocity in a manner analogous to synchrotron radiation. The radiated frequency of wrinkled SiGe/SiGe nanostructure was found to cover a wide spectrum with radiation power levels of the order of submilliwatts. Thus, this nanostructure can be used as a Si-based optical emitter and it will enable the integration of optoelectronic devices on a wafer.
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78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
73.63.-b Electronic transport in nanoscale materials and structures
42.70.-a Optical materials
72.20.Fr Low-field transport and mobility; piezoresistance

Dielectric properties of colloidal Gd2O3 nanocrystal films fabricated via electrophoretic deposition

S. V. Mahajan and J. H. Dickerson

Appl. Phys. Lett. 96, 113105 (2010); http://dx.doi.org/10.1063/1.3359418 (3 pages) | Cited 3 times

Online Publication Date: 17 March 2010

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We investigated the dielectric characteristics of [Al/Gd2O3/Si] metal-oxide-semiconductor (MOS) capacitors, which were fabricated from films of gadolinium oxide (Gd2O3) nanocrystals used as the gate oxide layer. Electrophoretic deposition cast Gd2O3 nanocrystal films of different thicknesses by varying the concentration of the nanocrystal suspensions. Capacitance-voltage (C-V) measurements of the MOS capacitors exhibited hysteresis, which indicated potentially favorable charge-storage properties. The films’ dielectric constant (κ = 3.90), calculated from the C-V data, led to the packing density of nanocrystals within the film (66%), which is in the glassy regime approximated by randomly closed packed spheres.
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77.55.-g Dielectric thin films
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
84.32.Tt Capacitors
85.30.Tv Field effect devices
82.45.Qr Electrodeposition and electrodissolution
83.80.Hj Suspensions, dispersions, pastes, slurries, colloids
77.22.Ch Permittivity (dielectric function)

A study of disorder effects in random (AlxGa1−xAs)n(AlyGa1−yAs)m superlattices embedded in a wide parabolic potential

Yu. A. Pusep, P. K. Mohseni, R. R. LaPierre, A. K. Bakarov, and A. I. Toropov

Appl. Phys. Lett. 96, 113106 (2010); http://dx.doi.org/10.1063/1.3364138 (3 pages) | Cited 2 times

Online Publication Date: 17 March 2010

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A photoluminescence (PL) study of the individual electron states localized in a random potential is performed in artificially disordered superlattices embedded in a wide parabolic well. The valence band bowing of the parabolic potential provides a variation of the emission energies which splits the optical transitions corresponding to different wells within the random potential. The blueshift of the PL lines emitted by individual random wells, observed with increasing disorder strength, is demonstrated. The variation of temperature and magnetic field allowed for the behavior of the electrons localized in individual wells of the random potential to be distinguished.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
73.21.Cd Superlattices
73.21.Fg Quantum wells
78.67.De Quantum wells
78.55.Cr III-V semiconductors

Plasmonic dark field microscopy

Houdong Hu, Changbao Ma, and Zhaowei Liu

Appl. Phys. Lett. 96, 113107 (2010); http://dx.doi.org/10.1063/1.3367729 (3 pages) | Cited 9 times

Online Publication Date: 18 March 2010

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We propose plasmonic dark field microscopy, which utilizes a chip-scale integrated plasmonic multilayered structure to substitute the bulky and expensive conventional condenser optics. Experimental results show that we can get high contrast image using the compact, low-cost, and alignment free plasmonic dark field microscopy.
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07.60.Pb Conventional optical microscopes
42.82.-m Integrated optics
42.79.Wc Optical coatings

Long range surface polaritons supported by lossy thin films

Christophe Arnold, Yichen Zhang, and Jaime Gómez Rivas

Appl. Phys. Lett. 96, 113108 (2010); http://dx.doi.org/10.1063/1.3364938 (3 pages) | Cited 4 times

Online Publication Date: 19 March 2010

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We demonstrate experimentally that strongly absorbing chalcogenide thin films can support long range surface polaritons. Moreover, the possibility to change the phase of this material allows us to investigate the influence of the permittivity of the thin film on the surface modes. We demonstrate the relative insensitivity of these modes to the permittivity of the thin film. Extending the range of materials that support long range surface polaritons to strongly absorbing layers opens new possibilities for applications that were thought to be limited to weakly absorbing media.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
78.66.Jg Amorphous semiconductors; glasses
77.22.Ch Permittivity (dielectric function)
63.50.Lm Glasses and amorphous solids

Measuring the temperature of a mesoscopic electron system by means of single electron statistics

Enrico Prati, Matteo Belli, Marco Fanciulli, and Giorgio Ferrari

Appl. Phys. Lett. 96, 113109 (2010); http://dx.doi.org/10.1063/1.3365204 (3 pages) | Cited 5 times

Online Publication Date: 19 March 2010

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We measure the temperature of a mesoscopic system consisting of an ultradilute two-dimensional electron gas at the Si/SiO2 interface in a metal-oxide-semiconductor field effect transistor (MOSFET) by means of the capture and emission of an electron in a point defect close to the interface. We show that the capture and emission by point defects in Si n-MOSFETs can be temperature dependent down to 800 mK. As the finite quantum grand canonical ensemble applies, the time domain charge fluctuation in the defect is used to define the temperature of the few electron gas in the channel.
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85.30.Tv Field effect devices
85.35.Gv Single electron devices
07.20.Dt Thermometers
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