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22 Mar 2010

Volume 96, Issue 12, Articles (12xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 121101 (2010); http://dx.doi.org/10.1063/1.3365020 (3 pages)

S. Sederberg, V. Van, and A. Y. Elezzabi
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Monolithic integration of plasmonic waveguides into a complimentary metal-oxide-semiconductor- and photonic-compatible platform

S. Sederberg, V. Van, and A. Y. Elezzabi

Appl. Phys. Lett. 96, 121101 (2010); http://dx.doi.org/10.1063/1.3365020 (3 pages) | Cited 8 times

Online Publication Date: 22 March 2010

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A silicon-based plasmonic waveguide was designed and fabricated for use at telecommunications wavelengths. This waveguide is interfaced to the silicon photonics platform by use of a tapered silicon-on-insulator waveguide. Simulations indicate that this scheme excites the transverse magnetic plasmonic mode and that the electric fields are confined to the silicon-gold interface. Transmitted power is measured for several device lengths and the propagation distance and coupling efficiency are found to be 2.00 μm and 38.0%, respectively. These results demonstrate the potential for integration between silicon photonics and silicon plasmonic devices and demonstrate the ability to incorporate silicon-based plasmonic devices into complimentary metal-oxide-semiconductor electronic and photonic circuitry.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
42.82.Bq Design and performance testing of integrated-optical systems

Pump-pump experiment in KH2PO4 crystals: Coupling two different wavelengths to identify the laser-induced damage mechanisms in the nanosecond regime

S. Reyné, G. Duchateau, J.-Y. Natoli, and L. Lamaignère

Appl. Phys. Lett. 96, 121102 (2010); http://dx.doi.org/10.1063/1.3368121 (3 pages) | Cited 5 times

Online Publication Date: 22 March 2010

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Laser-induced damage experiments based on an original pump-pump set-up have been carried out in the nanosecond regime for KH2PO4 (KDP) crystal. The impact of a simultaneous mixing of 351 nm and 1064 nm pulses has been experimentally studied and compared to a model based on heat transfer, the Mie theory and a Drude model. This study sheds light on the physical processes implied in the KDP laser damage. In particular, a three-photon ionization mechanism is shown to be responsible for laser damage in KDP.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
61.82.Ms Insulators

Optically tuneable blue phase photonic band gaps

Hu-Yi Liu, Chun-Ta Wang, Chiao-Yun Hsu, Tsung-Hsien Lin, and Jui-Hsiang Liu

Appl. Phys. Lett. 96, 121103 (2010); http://dx.doi.org/10.1063/1.3368119 (3 pages) | Cited 9 times

Online Publication Date: 23 March 2010

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This study investigates an optically switchable band gap of photonic crystal that is based on an azobenzene-doped liquid crystal blue phase. The trans-cis photoisomerization of azobenzene deforms the cubic unit cell of the blue phase and shifts the photonic band gap. The fast back-isomerization of azobenzene was induced by irradiation with different wavelengths light. The crystal structure is verified using Kossel diffraction diagram. An optically addressable blue phase display, based on Bragg reflection from the photonic band gap, is also demonstrated. The tunable ranges are around red, green, and blue wavelengths and exhibit a bright saturated color.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
61.30.Mp Blue phases and other defect-phases
82.30.Qt Isomerization and rearrangement
82.50.-m Photochemistry
42.79.Kr Display devices, liquid-crystal devices
42.70.Df Liquid crystals

Analyses of the intermediate energy levels in ZnTe:O alloys

C. Tablero, A. Martí, and A. Luque

Appl. Phys. Lett. 96, 121104 (2010); http://dx.doi.org/10.1063/1.3370356 (3 pages) | Cited 5 times

Online Publication Date: 23 March 2010

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The isoelectronic doping of ZnTe with oxygen leads to deep levels on which carriers recombine radiatively via intermediate band states. The electronic density and the impurity-host character of these deep levels are analyzed using first principles, for the wurtzite and zinc-blende structures, different oxygen concentration, and different exchange-correlation approach.
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71.55.Gs II-VI semiconductors
71.20.Nr Semiconductor compounds
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
71.70.Gm Exchange interactions
61.72.uj III-V and II-VI semiconductors

Semiconductor snail lasers

M. J. Strain, G. Mezősi, J. Javaloyes, M. Sorel, A. Pérez-Serrano, A. Scirè, S. Balle, J. Danckaert, and G. Verschaffelt

Appl. Phys. Lett. 96, 121105 (2010); http://dx.doi.org/10.1063/1.3371721 (3 pages) | Cited 1 time

Online Publication Date: 23 March 2010

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A modified ring laser geometry is presented to promote stable unidirectional lasing. The effects of directional coupling and facet reflectivities are investigated with respect to quantum efficiency, directionality, and side-mode suppression ratio of the lasing spectra. Simulation and experimental results are presented showing single mode (>20 dB side-mode suppression ratio), unidirectional lasing on an InP based multiple quantum well material.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Terahertz nanoresonators: Giant field enhancement and ultrabroadband performance

H. R. Park, Y. M. Park, H. S. Kim, J. S. Kyoung, M. A. Seo, D. J. Park, Y. H. Ahn, K. J. Ahn, and D. S. Kim

Appl. Phys. Lett. 96, 121106 (2010); http://dx.doi.org/10.1063/1.3368690 (3 pages) | Cited 12 times

Online Publication Date: 24 March 2010

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Transmission of terahertz (THz) electromagnetic waves through a series of nanoresonator arrays punctured in a thin metallic film is investigated. Over 30% of normalized transmitted amplitude is observed with only 0.18% of aperture-coverage, implying an electric field enhancement of 170. Increasing the coverage to 0.6% results in a 90% normalized amplitude, with a broader line width. Inspired by log-periodic antenna, we put ten nanoresonators with four different lengths per unit cell, succeeding in an ultrabroadband THz filter with one decade width between 0.2 and 2.0 THz.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
68.55.-a Thin film structure and morphology
84.40.Ba Antennas: theory, components and accessories
84.30.Vn Filters

Large-area InP-based crystalline nanomembrane flexible photodetectors

Weiquan Yang, Hongjun Yang, Guoxuan Qin, Zhenqiang Ma, Jesper Berggren, Mattias Hammar, Richard Soref, and Weidong Zhou

Appl. Phys. Lett. 96, 121107 (2010); http://dx.doi.org/10.1063/1.3372635 (3 pages) | Cited 8 times

Online Publication Date: 25 March 2010

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Large-area (3×3 mm2) flexible photodetectors were realized, based on crystalline InP semiconductor nanomembranes transferred to flexible polyethylene terephthalate substrates. Very low dark current (a few microamperes) and high responsivity (0.12 A/W) were demonstrated for flexible InP p-i-n photodetectors. Bending characteristics were also investigated for this type of flexible crystalline semiconductor photodetector, and it was found that, whereas the dark current was independent of bending radii, the photocurrent degraded, depending on the bending radii.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
81.05.Ea III-V semiconductors

Frequency-resolved temperature imaging of integrated circuits with full field heterodyne interferometry

S. Y. Suck, G. Tessier, N. Warnasooriya, A. Babuty, and Y. De Wilde

Appl. Phys. Lett. 96, 121108 (2010); http://dx.doi.org/10.1063/1.3367738 (3 pages) | Cited 2 times

Online Publication Date: 25 March 2010

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We report a fast imaging method based on full field heterodyne interferometry for the purpose of frequency resolved temperature imaging. An integrated circuit is supplied with a modulated current resulting into a temperature modulation. The frequency content for this modulation is detected using an object beam and a reference beam, frequency-shifted to create a beating of the interference pattern. We obtain frequency domain spectra of the temperature with excellent precision.
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07.20.Ka High-temperature instrumentation; pyrometers
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
42.87.Bg Phase shifting interferometry

Compression of 1.8 μm laser pulses to sub two optical cycles with bulk material

Bruno E. Schmidt, Pierre Béjot, Mathieu Giguère, Andrew D. Shiner, Carlos Trallero-Herrero, Éric Bisson, Jérôme Kasparian, Jean-Pierre Wolf, David M. Villeneuve, Jean-Claude Kieffer, Paul B. Corkum, and François Légaré

Appl. Phys. Lett. 96, 121109 (2010); http://dx.doi.org/10.1063/1.3359458 (3 pages) | Cited 18 times

Online Publication Date: 25 March 2010

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We demonstrate a simple scheme to generate 0.4 mJ 11.5 fs laser pulses at 1.8 μm. Optical parametrically amplified pulses are spectrally broadened by nonlinear propagation in an argon-filled hollow-core fiber and subsequently compressed to 1.9 optical cycles by linear propagation through bulk material in the anomalous dispersion regime. This pulse compression scheme is confirmed through numerical simulations.
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42.55.Wd Fiber lasers
42.70.Hj Laser materials
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

Di Zhu (朱迪), Ahmed N. Noemaun, Martin F. Schubert, Jaehee Cho, E. Fred Schubert, Mary H. Crawford, and Daniel D. Koleske

Appl. Phys. Lett. 96, 121110 (2010); http://dx.doi.org/10.1063/1.3371812 (3 pages) | Cited 8 times

Online Publication Date: 25 March 2010

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The confinement of electrons to the active region of GaInN light-emitting diodes (LEDs) is limited by the (i) inefficient electron capture into polar quantum wells, (ii) electron-attracting properties of electron-blocking layers (EBL), (iii) asymmetry in electron and hole transport, and (iv) unfavorable p-doping in the EBL for high Al content. To counteract these mechanisms, we employ tailored Si-doping in the quantum barriers (QBs). Experiments show a 37.5% enhancement in light-output power at high currents of one-QB-doped LEDs over all-QB-doped LEDs. These results are consistent with simulations showing that QB doping can be used to symmetrize the electron and hole distribution.
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85.60.Jb Light-emitting devices
61.72.U- Doping and impurity implantation

Coherent collisions of infrared self-trapped beams in photorefractive InP:Fe

Massimo Alonzo, Cristian Dan, Delphine Wolfersberger, and Eugenio Fazio

Appl. Phys. Lett. 96, 121111 (2010); http://dx.doi.org/10.1063/1.3373609 (3 pages)

Online Publication Date: 26 March 2010

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In this paper, we experimentally demonstrate collisions between two copropagating parallel coherent beams inside the photorefractive semiconductor iron doped indium phosphide (InP:Fe) at λ = 1064 nm.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Gi Light-sensitive materials
42.50.Wk Mechanical effects of light on material media, microstructures and particles
78.20.Mg Photorefractive effects
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Electron energy boosting in laser-wake-field acceleration with external magnetic field B ∼ 1 T and laser prepulses

Tomonao Hosokai, Alexei Zhidkov, Atsushi Yamazaki, Yoshio Mizuta, Mitsuru Uesaka, and Ryosuke Kodama

Appl. Phys. Lett. 96, 121501 (2010); http://dx.doi.org/10.1063/1.3371709 (3 pages) | Cited 3 times

Online Publication Date: 24 March 2010

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Hundred-mega-electron-volt electron beams with quasi-monoenergetic distribution, and a transverse geometrical emittance as small as ∼ 0.02 π mm mrad are generated by low power (7 TW, 45 fs) laser pulses tightly focused in helium gas jets in an external static magnetic field, B ∼ 1 T. Generation of monoenergetic beams strongly correlates with appearance of a straight, at least 2 mm length plasma channel in a short time before the main laser pulse and with the energy of copropagating picosecond pedestal pulses (PPP). For a moderate energy PPP, the multiple or staged electron self-injection in the channel gives several narrow peaks in the electron energy distribution.
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29.25.Bx Electron sources
29.20.Ej Linear accelerators
42.62.-b Laser applications
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Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

S. Plissard, K. A. Dick, X. Wallart, and P. Caroff

Appl. Phys. Lett. 96, 121901 (2010); http://dx.doi.org/10.1063/1.3367746 (3 pages) | Cited 17 times

Online Publication Date: 22 March 2010

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Growth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAsxSb1-x segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAs nanowire and passivated using an AlxGa1-xAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.
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81.07.Vb Quantum wires
81.07.Gf Nanowires
81.05.Ea III-V semiconductors
81.16.-c Methods of micro- and nanofabrication and processing
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Divacancies and the hydrogenation of Mg-Ti films with short range chemical order

H. Leegwater, H. Schut, W. Egger, A. Baldi, B. Dam, and S. W. H. Eijt

Appl. Phys. Lett. 96, 121902 (2010); http://dx.doi.org/10.1063/1.3368698 (3 pages) | Cited 4 times

Online Publication Date: 22 March 2010

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We obtained evidence for the partial chemical segregation of as-deposited and hydrogenated Mg1−yTiy films (0 ≤ y ≤ 0.30) into nanoscale Ti and Mg domains using positron Doppler-broadening. We exclusively monitor the hydrogenation of Mg domains, owing to the large difference in positron affinity for Mg and Ti. The electron momentum distribution broadens significantly upon transformation to the MgH2 phase over the whole compositional range. This reveals the similarity of the metal-insulator transition for rutile and fluorite MgH2. Positron lifetime studies show the presence of divacancies in the as-deposited and hydrogenated Mg-Ti metal films. In conjunction with the relatively large local lattice relaxations we deduce to be present in fluorite MgH2, these may be responsible for the fast hydrogen sorption kinetics in this MgH2 phase.
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88.30.R- Hydrogen storage
61.72.jd Vacancies
81.15.Cd Deposition by sputtering
68.55.A- Nucleation and growth
64.70.K- Solid-solid transitions

Low thermal conductivity of CsBiNb2O7 epitaxial layers

David G. Cahill, Alexander Melville, Darrell G. Schlom, and Mark A. Zurbuchen

Appl. Phys. Lett. 96, 121903 (2010); http://dx.doi.org/10.1063/1.3368120 (3 pages) | Cited 2 times

Online Publication Date: 23 March 2010

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The thermal conductivity of an epitaxial layer of CsBiNb2O7 grown by pulsed-laser deposition is measured by time-domain thermoreflectance in the temperature range 100<T<600 K. Characterization by x-ray diffraction and cross-sectional transmission electron microscopy show that the sample has the n = 2 structure of the Dion–Jacobson series of phases. The conductivity of this layered oxide is ≈ 60% of the predicted minimum thermal conductivity in this temperature range; the thermal conductivity at room temperature, 0.4 W m−1 K−1, is comparable to the lowest conductivity ever observed in an oxide crystal.
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66.70.Lm Other systems such as ionic crystals, molecular crystals, nanotubes, etc.
78.66.Nk Insulators
78.20.nd Thermophotonic effects
68.55.-a Thin film structure and morphology

Using indentation to characterize the poroelasticity of gels

Yuhang Hu, Xuanhe Zhao, Joost J. Vlassak, and Zhigang Suo

Appl. Phys. Lett. 96, 121904 (2010); http://dx.doi.org/10.1063/1.3370354 (3 pages) | Cited 15 times

Online Publication Date: 23 March 2010

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When an indenter is pressed into a gel to a fixed depth, the solvent in the gel migrates, and the force on the indenter relaxes. Within the theory of poroelasticity, the force relaxation curves for indenters of several types are obtained in a simple form, enabling indentation to be used with ease as a method for determining the elastic constants and permeability of the gel. The method is demonstrated with a conical indenter on an alginate hydrogel.
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82.70.Gg Gels and sols
62.20.D- Elasticity
62.20.M- Structural failure of materials

Enhanced magnetic response of fluids using self-assembled petal-like iron oxide particles

You-Hwan Son, Jung-Kun Lee, Yee Soong, Donald Martello, and Minking Chyu

Appl. Phys. Lett. 96, 121905 (2010); http://dx.doi.org/10.1063/1.3371713 (3 pages) | Cited 4 times

Online Publication Date: 23 March 2010

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Using self-assembled iron oxide (SAIO) particles with petal-like morphology, aqueous fluids containing magnetic particles were prepared and the effect of hierarchical particle surface on the viscoelasticity under magnetic was investigated. The fluids consisting of self-assembled iron oxide particles exhibit highly tunable viscoelasticity which is controlled by applying external magnetic field. A difference between SAIO particles and spherical particles is explained by the fact that surface features of the self-assembled particles increased the network strength between particles in the fluids.
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75.75.Cd Fabrication of magnetic nanostructures
75.50.Mm Magnetic liquids
81.16.Dn Self-assembly
75.50.Tt Fine-particle systems; nanocrystalline materials

Irreversible altering of crystalline phase of phase-change Ge–Sb thin films

L. Krusin-Elbaum, D. Shakhvorostov, C. Cabral, S. Raoux, and J. L. Jordan-Sweet

Appl. Phys. Lett. 96, 121906 (2010); http://dx.doi.org/10.1063/1.3361656 (3 pages) | Cited 1 time

Online Publication Date: 23 March 2010

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The stability of the crystalline phase of binary phase-change GexSb1−x films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge–Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature TGep to the rate of change dTcryst/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where Tcryst is nearly constant. Our findings point to a preferable 15%≲x≲50% window, that may achieve the desired cycling/archival properties of a phase-change cell.
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64.70.K- Solid-solid transitions
68.55.-a Thin film structure and morphology
64.75.St Phase separation and segregation in thin films
61.82.-d Radiation effects on specific materials
78.30.Hv Other nonmetallic inorganics
61.66.-f Structure of specific crystalline solids
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Conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers through selective oxidation

K.-M. C. Fu, C. Santori, P. E. Barclay, and R. G. Beausoleil

Appl. Phys. Lett. 96, 121907 (2010); http://dx.doi.org/10.1063/1.3364135 (3 pages) | Cited 31 times

Online Publication Date: 23 March 2010

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The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at 465 °C. The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to the diamond surface is an important step toward the integration of these centers into devices for quantum information and magnetic sensing applications.
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61.72.jd Vacancies
81.65.Mq Oxidation
61.72.Cc Kinetics of defect formation and annealing
81.05.ug Diamond
61.72.up Other materials

Crystal structure and optical study of Tm:Sc2SiO5 single crystal

Lihe Zheng, Jun Xu, Liangbi Su, Hongjun Li, Witold Ryba-Romanowski, Radosław Lisiecki, and Piotr Solarz

Appl. Phys. Lett. 96, 121908 (2010); http://dx.doi.org/10.1063/1.3372638 (3 pages) | Cited 3 times

Online Publication Date: 24 March 2010

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Sc2SiO5:4 at. %Tm crystal was obtained by the Czochralski method and the crystal cell parameters were calculated. Sixfold coordinated Sc-ions occupied two different crystallographic sites but the low temperature optical spectra only represented energy transitions originating from Tm ions residing in one site. Room temperature absorption spectrum was analyzed in the framework of Judd–Ofelt theory and the calculated absorption coefficient and cross section were 10.47 cm−1 and 5.55×10−21 cm2 at 791 nm respectively. Stimulated emission cross sections for the 3F4–3H6 transition near 1900 nm were evaluated using the reciprocity method while the luminescence 3F4 lifetime was measured to be 1.14 ms. We conclude that Tm:Sc2SiO5 is promising for diode-pumped infrared lasers.
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61.66.Fn Inorganic compounds
78.55.Hx Other solid inorganic materials
78.40.Ha Other nonmetallic inorganics
78.30.Hv Other nonmetallic inorganics
81.10.Fq Growth from melts; zone melting and refining
78.45.+h Stimulated emission

Size-independent shear band formation in amorphous nanowires made from simulated casting

Yunfeng Shi

Appl. Phys. Lett. 96, 121909 (2010); http://dx.doi.org/10.1063/1.3340908 (3 pages) | Cited 10 times

Online Publication Date: 24 March 2010

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Molecular dynamics simulations indicate that surfaces strongly influence the strain localization behavior of amorphous nanowires in tension. A sample preparation routine that simulates casting was employed to facilitate the relaxation of the sample surface. Samples as short as 15 nm (7.5 nm in diameter) form dominant shear bands during deformation. The elastic energy release during plastic deformation is sufficient to provide the excess potential energy required for the shear band nucleation at rather small sample sizes. The results show that shear band formation is almost size-independent and is bounded only by its own length scale.
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68.65.La Quantum wires (patterned in quantum wells)
61.43.-j Disordered solids
81.20.-n Methods of materials synthesis and materials processing
61.43.Bn Structural modeling: serial-addition models, computer simulation
81.40.Lm Deformation, plasticity, and creep
62.20.fq Plasticity and superplasticity

Illusion media: Generating virtual objects using realizable metamaterials

Wei Xiang Jiang, Hui Feng Ma, Qiang Cheng, and Tie Jun Cui

Appl. Phys. Lett. 96, 121910 (2010); http://dx.doi.org/10.1063/1.3371716 (3 pages) | Cited 8 times

Online Publication Date: 24 March 2010

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We propose a class of optical transformation media, illusion media, which render the enclosed object invisible and generate one or more virtual objects as desired. We apply the proposed media to design a microwave device, which transforms an actual object into two virtual objects. Such an illusion device exhibits unusual electromagnetic behavior as verified by full-wave simulations. Different from the published illusion devices which are composed of left-handed materials with simultaneously negative permittivity and permeability, the proposed illusion media have finite and positive permittivity and permeability. Hence the designed device could be realizable using artificial metamaterials.
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42.70.-a Optical materials
42.79.-e Optical elements, devices, and systems

Structural and optoelectronic properties of germanium-rich islands grown on silicon using molecular beam epitaxy

L. Nataraj, N. Sustersic, M. Coppinger, L. F. Gerlein, J. Kolodzey, and S. G. Cloutier

Appl. Phys. Lett. 96, 121911 (2010); http://dx.doi.org/10.1063/1.3371759 (3 pages) | Cited 3 times

Online Publication Date: 24 March 2010

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We report on the structural and optoelectronic properties of self-assembled germanium-rich islands grown on silicon using molecular beam epitaxy. Raman, photocurrent, photoluminescence, and transient optical spectroscopy measurements suggest significant built-in strains and a well-defined interface with little intermixing between the islands and the silicon. The shape of these islands depends on the growth conditions and includes pyramid, dome, barn-shaped, and superdome islands. Most importantly, we demonstrate that these germanium-rich islands provide efficient light emission at telecommunication wavelengths on a complementary metal-oxide semiconductor-compatible platform.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag Semiconductors
81.05.Cy Elemental semiconductors
72.40.+w Photoconduction and photovoltaic effects
78.30.Am Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors

Passivation of deep electronic states of partial dislocations in GaAs: A theoretical study

Lixin Zhang, W. E. McMahon, and Su-Huai Wei

Appl. Phys. Lett. 96, 121912 (2010); http://dx.doi.org/10.1063/1.3364140 (3 pages) | Cited 2 times

Online Publication Date: 24 March 2010

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The structure and electronic properties of reconstructed cores of 90° partial dislocations in GaAs are studied using first-principles methods. We find that a double-period reconstruction is most stable for an As-core whereas a single-period reconstruction is most stable for a Ga-core. We show that As and Ga dimers induce detrimental deep electronic states. These deep levels can be partially removed by introducing passivating dopants that break dimers in the dislocation core.
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71.55.Eq III-V semiconductors
61.72.uj III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
71.15.-m Methods of electronic structure calculations
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Investigation of the physical origins of etching LiNbO3 during Ti in-diffusion

Vijay Sivan, Anthony Holland, Anthony P. O’Mullane, and Arnan Mitchell

Appl. Phys. Lett. 96, 121913 (2010); http://dx.doi.org/10.1063/1.3367742 (3 pages) | Cited 2 times

Online Publication Date: 25 March 2010

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We investigate the physical origins of etching observed during Ti diffusion. The relationship between observed etch depth and water vapor content in the annealing environment is quantified. The dynamics of the etching process are also identified. It is discovered that water vapor content is essential for etching and that there is a characteristic delay before etching is observed. From these observations we can conclude that the process is electrochemical in nature with ionic defects diffusing into the Ti strip from the lithium niobate and these defects catalyzing the dissociation of water into reactive ions.
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81.65.Cf Surface cleaning, etching, patterning
66.30.-h Diffusion in solids
81.40.Gh Other heat and thermomechanical treatments
82.45.-h Electrochemistry and electrophoresis
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
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