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Applied Physics Letters / Volume 96 / Issue 12 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 122105 (2010); http://dx.doi.org/10.1063/1.3367708 (3 pages)

Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels

Abigail Lubow1, Sohrab Ismail-Beigi2, and T. P. Ma1

1Department of Electrical Engineering, Center for Research on Interface Science and Phenomena (CRISP), Yale University, New Haven, Connecticut 06520-8284, USA
2Department of Applied Physics, Center for Research on Interface Science and Phenomena (CRISP), Yale University, New Haven, Connecticut 06520-8284, USA

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(Received 13 January 2010; accepted 25 February 2010; published online 24 March 2010)

In this study, the effect of using high-electron-mobility channel materials, such as GaAs, InAs, and InGaAs, on drive current in n-channel metal-oxide-semiconductor (nMOS) and p-channel metal-oxide-semiconductor devices is studied. Relative to silicon, these materials have lower electron effective mass, which leads to lower inversion capacitance (Cinv) due to their lower density of states. Despite their lower Cinv, high-electron mobility channel materials are shown to be promising alternatives to silicon in delivering higher drive current in nMOS devices.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

effective mass, elemental semiconductors, gallium arsenide, germanium, high electron mobility transistors, III-V semiconductors, indium compounds, MOSFET, silicon

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3367708

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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$abstract.society.value is a Member of CrossRef American Institute of Physics

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