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22 Mar 2010

Volume 96, Issue 12, Articles (12xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 121101 (2010); http://dx.doi.org/10.1063/1.3365020 (3 pages)

S. Sederberg, V. Van, and A. Y. Elezzabi
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Monolithic integration of plasmonic waveguides into a complimentary metal-oxide-semiconductor- and photonic-compatible platform

S. Sederberg, V. Van, and A. Y. Elezzabi

Appl. Phys. Lett. 96, 121101 (2010); http://dx.doi.org/10.1063/1.3365020 (3 pages) | Cited 8 times

Online Publication Date: 22 March 2010

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A silicon-based plasmonic waveguide was designed and fabricated for use at telecommunications wavelengths. This waveguide is interfaced to the silicon photonics platform by use of a tapered silicon-on-insulator waveguide. Simulations indicate that this scheme excites the transverse magnetic plasmonic mode and that the electric fields are confined to the silicon-gold interface. Transmitted power is measured for several device lengths and the propagation distance and coupling efficiency are found to be 2.00 μm and 38.0%, respectively. These results demonstrate the potential for integration between silicon photonics and silicon plasmonic devices and demonstrate the ability to incorporate silicon-based plasmonic devices into complimentary metal-oxide-semiconductor electronic and photonic circuitry.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
42.82.Bq Design and performance testing of integrated-optical systems

Pump-pump experiment in KH2PO4 crystals: Coupling two different wavelengths to identify the laser-induced damage mechanisms in the nanosecond regime

S. Reyné, G. Duchateau, J.-Y. Natoli, and L. Lamaignère

Appl. Phys. Lett. 96, 121102 (2010); http://dx.doi.org/10.1063/1.3368121 (3 pages) | Cited 5 times

Online Publication Date: 22 March 2010

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Laser-induced damage experiments based on an original pump-pump set-up have been carried out in the nanosecond regime for KH2PO4 (KDP) crystal. The impact of a simultaneous mixing of 351 nm and 1064 nm pulses has been experimentally studied and compared to a model based on heat transfer, the Mie theory and a Drude model. This study sheds light on the physical processes implied in the KDP laser damage. In particular, a three-photon ionization mechanism is shown to be responsible for laser damage in KDP.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
61.82.Ms Insulators

Optically tuneable blue phase photonic band gaps

Hu-Yi Liu, Chun-Ta Wang, Chiao-Yun Hsu, Tsung-Hsien Lin, and Jui-Hsiang Liu

Appl. Phys. Lett. 96, 121103 (2010); http://dx.doi.org/10.1063/1.3368119 (3 pages) | Cited 9 times

Online Publication Date: 23 March 2010

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This study investigates an optically switchable band gap of photonic crystal that is based on an azobenzene-doped liquid crystal blue phase. The trans-cis photoisomerization of azobenzene deforms the cubic unit cell of the blue phase and shifts the photonic band gap. The fast back-isomerization of azobenzene was induced by irradiation with different wavelengths light. The crystal structure is verified using Kossel diffraction diagram. An optically addressable blue phase display, based on Bragg reflection from the photonic band gap, is also demonstrated. The tunable ranges are around red, green, and blue wavelengths and exhibit a bright saturated color.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
61.30.Mp Blue phases and other defect-phases
82.30.Qt Isomerization and rearrangement
82.50.-m Photochemistry
42.79.Kr Display devices, liquid-crystal devices
42.70.Df Liquid crystals

Analyses of the intermediate energy levels in ZnTe:O alloys

C. Tablero, A. Martí, and A. Luque

Appl. Phys. Lett. 96, 121104 (2010); http://dx.doi.org/10.1063/1.3370356 (3 pages) | Cited 5 times

Online Publication Date: 23 March 2010

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The isoelectronic doping of ZnTe with oxygen leads to deep levels on which carriers recombine radiatively via intermediate band states. The electronic density and the impurity-host character of these deep levels are analyzed using first principles, for the wurtzite and zinc-blende structures, different oxygen concentration, and different exchange-correlation approach.
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71.55.Gs II-VI semiconductors
71.20.Nr Semiconductor compounds
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
71.70.Gm Exchange interactions
61.72.uj III-V and II-VI semiconductors

Semiconductor snail lasers

M. J. Strain, G. Mezősi, J. Javaloyes, M. Sorel, A. Pérez-Serrano, A. Scirè, S. Balle, J. Danckaert, and G. Verschaffelt

Appl. Phys. Lett. 96, 121105 (2010); http://dx.doi.org/10.1063/1.3371721 (3 pages) | Cited 1 time

Online Publication Date: 23 March 2010

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A modified ring laser geometry is presented to promote stable unidirectional lasing. The effects of directional coupling and facet reflectivities are investigated with respect to quantum efficiency, directionality, and side-mode suppression ratio of the lasing spectra. Simulation and experimental results are presented showing single mode (>20 dB side-mode suppression ratio), unidirectional lasing on an InP based multiple quantum well material.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Terahertz nanoresonators: Giant field enhancement and ultrabroadband performance

H. R. Park, Y. M. Park, H. S. Kim, J. S. Kyoung, M. A. Seo, D. J. Park, Y. H. Ahn, K. J. Ahn, and D. S. Kim

Appl. Phys. Lett. 96, 121106 (2010); http://dx.doi.org/10.1063/1.3368690 (3 pages) | Cited 12 times

Online Publication Date: 24 March 2010

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Transmission of terahertz (THz) electromagnetic waves through a series of nanoresonator arrays punctured in a thin metallic film is investigated. Over 30% of normalized transmitted amplitude is observed with only 0.18% of aperture-coverage, implying an electric field enhancement of 170. Increasing the coverage to 0.6% results in a 90% normalized amplitude, with a broader line width. Inspired by log-periodic antenna, we put ten nanoresonators with four different lengths per unit cell, succeeding in an ultrabroadband THz filter with one decade width between 0.2 and 2.0 THz.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
68.55.-a Thin film structure and morphology
84.40.Ba Antennas: theory, components and accessories
84.30.Vn Filters

Large-area InP-based crystalline nanomembrane flexible photodetectors

Weiquan Yang, Hongjun Yang, Guoxuan Qin, Zhenqiang Ma, Jesper Berggren, Mattias Hammar, Richard Soref, and Weidong Zhou

Appl. Phys. Lett. 96, 121107 (2010); http://dx.doi.org/10.1063/1.3372635 (3 pages) | Cited 8 times

Online Publication Date: 25 March 2010

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Large-area (3×3 mm2) flexible photodetectors were realized, based on crystalline InP semiconductor nanomembranes transferred to flexible polyethylene terephthalate substrates. Very low dark current (a few microamperes) and high responsivity (0.12 A/W) were demonstrated for flexible InP p-i-n photodetectors. Bending characteristics were also investigated for this type of flexible crystalline semiconductor photodetector, and it was found that, whereas the dark current was independent of bending radii, the photocurrent degraded, depending on the bending radii.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
81.05.Ea III-V semiconductors

Frequency-resolved temperature imaging of integrated circuits with full field heterodyne interferometry

S. Y. Suck, G. Tessier, N. Warnasooriya, A. Babuty, and Y. De Wilde

Appl. Phys. Lett. 96, 121108 (2010); http://dx.doi.org/10.1063/1.3367738 (3 pages) | Cited 2 times

Online Publication Date: 25 March 2010

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We report a fast imaging method based on full field heterodyne interferometry for the purpose of frequency resolved temperature imaging. An integrated circuit is supplied with a modulated current resulting into a temperature modulation. The frequency content for this modulation is detected using an object beam and a reference beam, frequency-shifted to create a beating of the interference pattern. We obtain frequency domain spectra of the temperature with excellent precision.
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07.20.Ka High-temperature instrumentation; pyrometers
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
42.87.Bg Phase shifting interferometry

Compression of 1.8 μm laser pulses to sub two optical cycles with bulk material

Bruno E. Schmidt, Pierre Béjot, Mathieu Giguère, Andrew D. Shiner, Carlos Trallero-Herrero, Éric Bisson, Jérôme Kasparian, Jean-Pierre Wolf, David M. Villeneuve, Jean-Claude Kieffer, Paul B. Corkum, and François Légaré

Appl. Phys. Lett. 96, 121109 (2010); http://dx.doi.org/10.1063/1.3359458 (3 pages) | Cited 18 times

Online Publication Date: 25 March 2010

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We demonstrate a simple scheme to generate 0.4 mJ 11.5 fs laser pulses at 1.8 μm. Optical parametrically amplified pulses are spectrally broadened by nonlinear propagation in an argon-filled hollow-core fiber and subsequently compressed to 1.9 optical cycles by linear propagation through bulk material in the anomalous dispersion regime. This pulse compression scheme is confirmed through numerical simulations.
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42.55.Wd Fiber lasers
42.70.Hj Laser materials
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

Di Zhu (朱迪), Ahmed N. Noemaun, Martin F. Schubert, Jaehee Cho, E. Fred Schubert, Mary H. Crawford, and Daniel D. Koleske

Appl. Phys. Lett. 96, 121110 (2010); http://dx.doi.org/10.1063/1.3371812 (3 pages) | Cited 8 times

Online Publication Date: 25 March 2010

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The confinement of electrons to the active region of GaInN light-emitting diodes (LEDs) is limited by the (i) inefficient electron capture into polar quantum wells, (ii) electron-attracting properties of electron-blocking layers (EBL), (iii) asymmetry in electron and hole transport, and (iv) unfavorable p-doping in the EBL for high Al content. To counteract these mechanisms, we employ tailored Si-doping in the quantum barriers (QBs). Experiments show a 37.5% enhancement in light-output power at high currents of one-QB-doped LEDs over all-QB-doped LEDs. These results are consistent with simulations showing that QB doping can be used to symmetrize the electron and hole distribution.
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85.60.Jb Light-emitting devices
61.72.U- Doping and impurity implantation

Coherent collisions of infrared self-trapped beams in photorefractive InP:Fe

Massimo Alonzo, Cristian Dan, Delphine Wolfersberger, and Eugenio Fazio

Appl. Phys. Lett. 96, 121111 (2010); http://dx.doi.org/10.1063/1.3373609 (3 pages)

Online Publication Date: 26 March 2010

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In this paper, we experimentally demonstrate collisions between two copropagating parallel coherent beams inside the photorefractive semiconductor iron doped indium phosphide (InP:Fe) at λ = 1064 nm.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Gi Light-sensitive materials
42.50.Wk Mechanical effects of light on material media, microstructures and particles
78.20.Mg Photorefractive effects
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