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Applied Physics Letters / Volume 96 / Issue 13 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 131115 (2010); http://dx.doi.org/10.1063/1.3374884 (3 pages)

Clustering effects in Ga(AsBi)

Sebastian Imhof1, Angela Thränhardt1, Alexej Chernikov2, Martin Koch2, Niko S. Köster2, Kolja Kolata2, Sangam Chatterjee2, Stephan W. Koch2, Xianfeng Lu3, Shane R. Johnson3, Dan A. Beaton4, Thomas Tiedje5, and Oleg Rubel6,7

1Institut für Physik, Technische Universität Chemnitz, 09107 Chemnitz, Germany
2Fachbereich Physik, Philipps-Universität Marburg, 35032 Marburg, Germany
3Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-6206, USA
4Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
5Department of Electrical and Computer Engineering, University of Victoria, Victoria, British Columbia V8W 3P6, Canada
6Thunder Bay Regional Research Institute, Thunder Bay, Ontario P7A 7T1, Canada
7Department of Physics, Lakehead University, Thunder Bay, Ontario P7B 5E1, Canada

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(Received 3 March 2010; accepted 10 March 2010; published online 1 April 2010)

The photoluminescence from a Ga(AsBi) sample is investigated as a function of pump power and lattice temperature. The disorder-related features are analyzed using a Monte Carlo simulation technique. A two-scale approach is introduced to separately account for cluster localization and alloy disorder effects. The corresponding characteristic energy scales of 11 and 45 meV are deduced from the detailed comparison between experiment and simulation.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium arsenide, III-V semiconductors, Monte Carlo methods, photoluminescence

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3374884

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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