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5 Apr 2010

Volume 96, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 96, 143103 (2010); http://dx.doi.org/10.1063/1.3378684 (3 pages)

Joshua A. Kellar, Justice M. P. Alaboson, Qing Hua Wang, and Mark C. Hersam
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Inertial measurement with trapped particles: A microdynamical system

E. Rehmi Post, George A. Popescu, and Neil Gershenfeld

Appl. Phys. Lett. 96, 143501 (2010); http://dx.doi.org/10.1063/1.3360808 (3 pages) | Cited 1 time

Online Publication Date: 5 April 2010

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We describe an inertial measurement device based on an electrodynamically trapped proof mass. Mechanical constraints are replaced by guiding fields, permitting the trap stiffness to be tuned dynamically. Optical readout of the proof mass motion provides a measurement of acceleration and rotation, resulting in an integrated six degree of freedom inertial measurement device. We demonstrate such a device—constructed without microfabrication—with sensitivity comparable to that of commercial microelectromechanical systems technology and show how trapping parameters may be adjusted to increase dynamic range.
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07.10.Cm Micromechanical devices and systems
06.30.Gv Velocity, acceleration, and rotation

Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation technique

Yue Guo, Xia An, Ru Huang, Chunhui Fan, and Xing Zhang

Appl. Phys. Lett. 96, 143502 (2010); http://dx.doi.org/10.1063/1.3378878 (3 pages)

Online Publication Date: 6 April 2010

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In this paper, a method of ion-implantation after germanidation (IAG) has been presented to modulate the Schottky barrier (SB) heights on germanium substrates. Schottky diodes have been fabricated with improved rectifying current curves and larger Ion/Ioff ratio up to 106. A relatively high effective electron barrier height for NiGe/n-Ge has been achieved by the BF2+ IAG technique, which suggests a record-low effective hole barrier height of nearly 0.06 eV. The tuning of SB height can be mainly contributed to the effects of fluorine. In addition, there is a process temperature window between 350 to 450 °C for the drive-in annealing of IAG to obtain optimized SB heights. These results provide the design guidelines for the process integration of germanium based Schottky barrier source/drain metal-oxide-semiconductor field-effect transistors.
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73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
61.72.up Other materials
61.72.Cc Kinetics of defect formation and annealing
73.40.Ei Rectification
85.30.Kk Junction diodes

Thin film tandem photovoltaic cell from II-IV-V chalcopyrites

Mark van Schilfgaarde, Timothy J. Coutts, Nathan Newman, and Timothy Peshek

Appl. Phys. Lett. 96, 143503 (2010); http://dx.doi.org/10.1063/1.3377857 (3 pages) | Cited 4 times

Online Publication Date: 7 April 2010

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Using quasiparticle self-consistent GW (QSGW) theory, we analyze materials properties of the II-IV-V family of chalcopyrite semiconductors consisting of compounds and alloys based on (Mg,Zn,Cd)(Si,Ge,Sn)(P,As)2, and show how they may offer excellent opportunities for the development of tandem thin-film solar cells. The constituent elements are abundant and nearly lattice-matched compounds can be found with near optimum band gaps. We show the close connection to band structures of other fourfold coordinated compounds that have led to the highest efficiency devices, and suggest potentially optimum alloys for tandem thin-film cells.
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88.40.J- Types of solar cells
71.20.Nr Semiconductor compounds

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

Sansaptak Dasgupta, Nidhi, David F. Brown, Feng Wu, Stacia Keller, James S. Speck, and Umesh K. Mishra

Appl. Phys. Lett. 96, 143504 (2010); http://dx.doi.org/10.1063/1.3374331 (3 pages) | Cited 21 times

Online Publication Date: 7 April 2010

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Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher ft and fmax in high electron mobility transistors (HEMTs). N-polar (000math) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.
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85.30.Tv Field effect devices
52.77.Dq Plasma-based ion implantation and deposition
73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Opposite bias polarity dependence of resistive switching in n-type Ga-doped-ZnO and p-type NiO thin films

Kentaro Kinoshtia, Takumi Okutani, Hayato Tanaka, Toshio Hinoki, Kenji Yazawa, Koutoku Ohmi, and Satoru Kishida

Appl. Phys. Lett. 96, 143505 (2010); http://dx.doi.org/10.1063/1.3380822 (3 pages) | Cited 14 times

Online Publication Date: 7 April 2010

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A hypothesis based on the model that explains the resistance change effect of resistive random access memory by redox reaction is proposed. This hypothesis leads to the conclusion that the relationship between the polarity of the applied bias voltage and the resultant resistance change in p-type semiconductors is opposite to that for n-type semiconductors. The bias polarity dependence of the resultant resistance change in ZnO and Ga-doped ZnO (GZO), which are n-type semiconductors, and that in NiO, which is a p-type semiconductor, were investigated using conducting atomic force microscopy. Opposite bias polarity was confirmed to induce GZO and NiO into the same resistance state, which is consistent with the hypothesis.
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73.61.Ga II-VI semiconductors
68.37.Ps Atomic force microscopy (AFM)

Polyelectrolyte junction field effect transistor based on microfluidic chip

Kwang Bok Kim, Ji-Hyung Han, Hee Chan Kim, and Taek Dong Chung

Appl. Phys. Lett. 96, 143506 (2010); http://dx.doi.org/10.1063/1.3389492 (3 pages) | Cited 9 times

Online Publication Date: 9 April 2010

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This study developed the first polyelectrolyte junction field effect transistor capable of operating in an aqueous microfluidic network on a chip. In this system, polydiallyldimethylammonium chloride and poly-2-acrylamido-2-methyl-1-propanesulfonic acid are used for the elaborate control of the ion flow by selective extraction of anions and cations from the microchannel. The rate of ion extraction can be regulated by simply adjusting the gate voltage, and it results in ion depletion in the vicinity of the polyelectrolyte plugs. The extent of ion depletion between the polyelectrolyte plugs is a sensitive function of the ion resistance of the microchannel; therefore, the current between the source and the drain can be controlled by regulating the gate voltage.
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85.30.Tv Field effect devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
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