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5 Apr 2010

Volume 96, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 96, 143103 (2010); http://dx.doi.org/10.1063/1.3378684 (3 pages)

Joshua A. Kellar, Justice M. P. Alaboson, Qing Hua Wang, and Mark C. Hersam
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Unipolar recovery of dielectric breakdown in fully silicided high-κ gate stack devices and its reliability implications

N. Raghavan, K. L. Pey, W. H. Liu, X. Wu, and X. Li

Appl. Phys. Lett. 96, 142901 (2010); http://dx.doi.org/10.1063/1.3374450 (3 pages) | Cited 3 times

Online Publication Date: 5 April 2010

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We report observations of unipolar recovery of dielectric breakdown in fully silicided NiSi-gate HfSiON–SiOx bilayer dielectric based high-κ metal-insulator-semiconductor (MIS) gate stack, analogous to resistive switching in metal-insulator-metal (MIM) nonvolatile memory devices. The dependence of the recovery voltage on breakdown hardness and filament location is analyzed and the physics behind MIS recovery, governed by joule heating induced oxygen vacancy trap passivation, is explained using failure analysis and statistical investigations. The observed MIS recovery phenomenon can be a tool to design for reliability in novel metal gate high-κ gate stacks.
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85.30.Tv Field effect devices
81.40.Gh Other heat and thermomechanical treatments
81.65.Rv Passivation
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
77.55.D- High-permittivity gate dielectric films

Dielectric relaxation and polaronic conduction in double perovskite La2MgMnO6

Y. Q. Lin and X. M. Chen

Appl. Phys. Lett. 96, 142902 (2010); http://dx.doi.org/10.1063/1.3377906 (3 pages)

Online Publication Date: 6 April 2010

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The dielectric and conductive characteristics of double perovskite La2MgMnO6 were investigated together with the mixed-valence structure. The magnetic characterization and x-ray photoemission spectroscopy analysis showed the co-presence of Mn3+ and Mn4+. A Debye type dielectric relaxation with an activation energy of 0.33 eV was observed in La2MgMnO6 ceramics. The relaxorlike dielectric characteristic was attributed to the dipolar effects coming from charge carrier hopping between Mn3+ and Mn4+. The dc conductivity of La2MgMnO6 was well fitted using adiabatic small polaron theory, and also correlated with the mixed-valence structure of Mn3+/Mn4+.
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77.22.Gm Dielectric loss and relaxation
71.38.-k Polarons and electron-phonon interactions
72.20.Ee Mobility edges; hopping transport
79.60.-i Photoemission and photoelectron spectra

Numerical simulation of vacuum-ultraviolet irradiation of dielectric layers

H. Sinha, H. Ren, A. Sehgal, G. A. Antonelli, Y. Nishi, and J. L. Shohet

Appl. Phys. Lett. 96, 142903 (2010); http://dx.doi.org/10.1063/1.3386531 (3 pages) | Cited 7 times

Online Publication Date: 8 April 2010

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Vacuum-ultraviolet irradiation produces trapped charges in dielectrics. The trapped charges often generate self-consistent electric fields. A Monte Carlo simulation coupled with a Poisson equation solver is used to model the relationship between the irradiation photon flux and electrostatic potential. The simulation includes photoconduction, photoemission, photoinjection, and the effects of self-consistent electric fields. Calculations show that photoemission and photoinjection are responsible for changes in the electric potential as photon dose or dielectric thicknesses are varied. Experimental surface-potential measurements were made to compare the results of the simulation.
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77.55.-g Dielectric thin films
73.50.Pz Photoconduction and photovoltaic effects

Ferroelectric BaTiO3 single crystal under superstrong electric fields up to 55 MV/m: A comparative experimental and theoretical study

I. N. Leontyev, O. E. Fesenko, N. G. Leontyev, and B. Dkhil

Appl. Phys. Lett. 96, 142904 (2010); http://dx.doi.org/10.1063/1.3386537 (3 pages) | Cited 2 times

Online Publication Date: 8 April 2010

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We investigated the effect of huge electric field up to E = 55 MV/m on tetragonal ferroelectric phase of BaTiO3 single crystal. Both lattice parameters and the dielectric susceptibility along the polar axis were determined. The induced polarization shows a continuous increase up to 20% of the spontaneous polarization. The longitudinal d33 and transverse d31 piezoelectric coefficients were also determined. The experimental data are described by a phenomenological approach. Interestingly, an intermediate critical electric field value of E ∼ 25 MV/m was evidenced suggesting that the physics below and above this value are different.
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77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects
77.80.-e Ferroelectricity and antiferroelectricity
61.66.Fn Inorganic compounds

Temperature dependence of strain–polarization coupling in ferroelectric ceramics

P. M. Weaver, M. G. Cain, and M. Stewart

Appl. Phys. Lett. 96, 142905 (2010); http://dx.doi.org/10.1063/1.3367734 (3 pages) | Cited 2 times

Online Publication Date: 8 April 2010

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The temperature dependence of the strain, electric field, and polarization of lead zirconate titanate ceramic under unipolar electric fields up to 1.3 kV mm−1 from −50 °C up to +200 °C is reported. An electrostrictive model is shown to describe the response to high levels of induced polarization and electric field below and above the ferroelectric to paraelectric transition. This is despite nonlinearity and hysteresis in the strain–field response. A linear strain–polarization response is shown to be an approximation to a quadratic electrostriction which is invalid at higher temperatures while the electrostriction holds across the temperature range.
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77.65.-j Piezoelectricity and electromechanical effects
77.22.Ej Polarization and depolarization
77.80.bn Strain and interface effects
77.80.Dj Domain structure; hysteresis
77.84.Cg PZT ceramics and other titanates

The effects of wet surface clean and in situ interlayer on In0.52Al0.48As metal-oxide-semiconductor characteristics

Masaharu Kobayashi, Gaurav Thareja, Yun Sun, Niti Goel, Mike Garner, Wilman Tsai, Piero Pianetta, and Yoshio Nishi

Appl. Phys. Lett. 96, 142906 (2010); http://dx.doi.org/10.1063/1.3379024 (3 pages) | Cited 2 times

Online Publication Date: 8 April 2010

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The effect of the surface passivation with ex situ wet clean as well as insertion of an III-V in situ grown interlayer, on the HfO2/In0.52Al0.48As interface characteristics was investigated with capacitance/conductance measurements, and synchrotron radiation photoemission spectroscopy. A very thin aluminum oxide passivation layer grown after In0.52Al0.48As surface clean improves the In0.52Al0.48As metal-oxide-semiconductor characteristics compared to native oxide covered interface, giving an interface state density (Dit) 3.8×1012 cm−2 eV−1 at 0.31 eV from conduction band edge. Furthermore, insertion of a thin In0.53Ga0.47As cap layer effectively prevented Al oxidation further improving electrical properties, such as frequency dispersion, hysteresis, Dit (2.7×1012 cm−2 eV−1) and capacitive equivalent oxide thickness.
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81.65.Rv Passivation
81.65.Cf Surface cleaning, etching, patterning
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.20.At Surface states, band structure, electron density of states
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