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5 Apr 2010

Volume 96, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 96, 143103 (2010); http://dx.doi.org/10.1063/1.3378684 (3 pages)

Joshua A. Kellar, Justice M. P. Alaboson, Qing Hua Wang, and Mark C. Hersam
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Effect of incident light power on Schottky barriers and I-V characteristics of organic bulk heterojunction photodiodes

Ali Bilge Guvenc, Emre Yengel, Guoping Wang, Cengiz S. Ozkan, and Mihrimah Ozkan

Appl. Phys. Lett. 96, 143301 (2010); http://dx.doi.org/10.1063/1.3374402 (3 pages) | Cited 2 times

Online Publication Date: 5 April 2010

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The space charge region (SCR) width of the Schottky barrier (SB) that forms on the interface between aluminum and organic semiconductor polymer of bulk-heterojunction (BH) organic photodiodes (OPD) based on poly(3-hexylthiophene) (P3HT): [6,6]-phenyl-C61-butyric acid methylester (PCBM) blend, has been investigated according to reverse voltage bias over the OPD. We focused on the effect of incident light power (ILP) on the SCR and the I-V characteristics of the devices. Comparison of the mathematical models and experimental data measured under different ILPs indicate a dependency of SCR to the ILP.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.30.+y Surface double layers, Schottky barriers, and work functions
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Biphase micro/nanometer sized single crystals of organic semiconductors: Control synthesis and their strong phase dependent optoelectronic properties

Chengliang Wang, Yaling Liu, Zhongming Wei, Hongxiang Li, Wei Xu, and Wenping Hu

Appl. Phys. Lett. 96, 143302 (2010); http://dx.doi.org/10.1063/1.3383222 (3 pages) | Cited 2 times

Online Publication Date: 5 April 2010

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The control synthesis of α and β phase micro/nanometer sized single crystals of semiconductor 9,10-bis(phenylethynyl)anthracene were achieved; the device performance of individual α and β phase single crystals showed strong phase dependence; devices of β phase single crystals exhibited very high photoswitch performance (on/off current ratio ∼ 6×103, one of the highest values reported for organic materials), and those of α phase displayed high field-effect performance.
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84.32.Dd Connectors, relays, and switches
85.30.-z Semiconductor devices
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
85.60.-q Optoelectronic devices
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Fullerene-multiwalled carbon nanotube complexes for bulk heterojunction photovoltaic cells

Cheng Li, Yuhong Chen, Susana Addo Ntim, and Somenath Mitra

Appl. Phys. Lett. 96, 143303 (2010); http://dx.doi.org/10.1063/1.3386526 (3 pages) | Cited 6 times

Online Publication Date: 7 April 2010

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We demonstrate the implementation of multiwalled carbon nanotubes-fullerene (MWNT-C60) complexes in bulk heterojunction organic photovoltaic (OPV) cells. Such a design takes advantage of the C60 as an electron acceptor, while the MWNTs serve as efficient charge transporters. Two types of chemically functionalized MWNTs were used to synthesize these complexes. The first used carboxylated nanotubes (c-MWNT), while the latter were functionalized with octadecylamine (o-MWNT). All the photovoltaic parameters were found to be superior with c-MWNT, and their combined effect led to eight times higher power conversion efficiency. The enhancement was attributed to the electron withdrawing nature of the short carboxylic group which facilitated fast electron transfer from the C60 to the nanotube backbone, whereas the long alky chain on the o-MWNT served as an electron blocker. Therefore, it is evident that the form of functionalization is expected to have significant effect on the performance of OPVs containing carbon nanotubes.
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84.60.Jt Photoelectric conversion
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Monolayer dual gate transistors with a single charge transport layer

M. Spijkman, S. G. J. Mathijssen, E. C. P. Smits, M. Kemerink, P. W. M. Blom, and D. M. de Leeuw

Appl. Phys. Lett. 96, 143304 (2010); http://dx.doi.org/10.1063/1.3379026 (3 pages) | Cited 3 times

Online Publication Date: 7 April 2010

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A dual gate transistor was fabricated using a self-assembled monolayer as the semiconductor. We show the possibility of processing a dielectric on top of the self-assembled monolayer without deteriorating the device performance. The two gates of the transistor accumulate charges in the monomolecular transport layer and artifacts caused by the semiconductor thickness are negated. We investigate the electrical transport in a dual gate self-assembled monolayer field-effect transistor and present a detailed analysis of the importance of the contact geometry in monolayer field-effect transistors.
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85.30.Tv Field effect devices
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Light- and ion-gauge-induced space charges in tris-(8-hydroxyquinolate) aluminum-based organic light-emitting diodes

Yutaka Noguchi, Naoki Sato, Yukimasa Miyazaki, and Hisao Ishii

Appl. Phys. Lett. 96, 143305 (2010); http://dx.doi.org/10.1063/1.3374405 (3 pages) | Cited 5 times

Online Publication Date: 7 April 2010

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We report space charge formation in tris-(8-hydroxyquinolate) aluminum (Alq3)-based organic light-emitting diodes induced by light irradiation and ion-gauge (IG) operation during device fabrication. An analysis of the capacitance-voltage curves of the light-treated devices reveals the presence of uniformly distributed negative space charges in the Alq3 layer. Spatial inhomogeneity of the orientation polarization as well as electrons trapped in the Alq3 film can be the origin of the negative space charge. We also found that positively charged species can be included in the device due to IG operation.
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85.60.Jb Light-emitting devices
77.22.Jp Dielectric breakdown and space-charge effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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Highly efficient orange-red phosphorescent organic light-emitting diode using 2,7-bis(carbazo-9-yl)-9,9-ditolyfluorene as the host

Jwo-Huei Jou, Shih-Ming Shen, Szu-Hao Chen, Ming-Hsuan Wu, Wei-Ben Wang, Hsi-Ching Wang, Chuen-Ren Lin, Yi-Chieh Chou, Po-Hsien Wu, and Jing-Jong Shyue

Appl. Phys. Lett. 96, 143306 (2010); http://dx.doi.org/10.1063/1.3374326 (3 pages) | Cited 14 times

Online Publication Date: 8 April 2010

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We demonstrate an efficient orange-red organic light-emitting diode using a host, 2,7-bis(carbazo-9-yl)-9,9-ditolyfluorene, doped with tris(2-phenylquinoline) iridium(III). The device exhibits a high current efficiency of 44.8 cd/A at 1000 cd/m2. This may be attributed to the adoption of the host, which favors the injection of holes, as well as the emissive-layer architecture enabling excitons to form on host and hence favoring efficient energy-transfer from host to guest. Moreover, an electron-confining layer is used to modulate excessive holes to be injected into emissive layer and confine the electrons, which would in turn balance the injection of both carriers and improve efficiency.
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85.60.Jb Light-emitting devices
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Modeling of bulk and bilayer organic heterojunction solar cells

Joseph Cuiffi, Travis Benanti, Wook Jun Nam, and Stephen Fonash

Appl. Phys. Lett. 96, 143307 (2010); http://dx.doi.org/10.1063/1.3383232 (3 pages) | Cited 10 times

Online Publication Date: 9 April 2010

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Solar cells require symmetry-breaking features such as built-in electrostatic fields and/or effective fields. We examine an organic heterojunction structure with no built-in field and explore the origins of its current-voltage characteristics and open circuit voltage (VOC). Two behaviors are found: (1) VOC = VI+m[(HOMO(D) - (LUMO(A)] where m ≈ 1, the intercept (VI) is determined by interface recombination kinetics, HOMO(D) is the donor highest occupied molecular orbital, and LUMO(A) is the acceptor lowest unoccupied molecular orbital; (2) if interface recombination is suppressed, VOC is controlled by bulk/contact recombination and is not dependent upon HOMO(D) - LUMO(A).
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88.40.jp Multijunction solar cells
88.40.H- Solar cells (photovoltaics)
85.30.De Semiconductor-device characterization, design, and modeling
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