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12 Apr 2010

Volume 96, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 96, 153701 (2010); http://dx.doi.org/10.1063/1.3385388 (3 pages)

Sinan Keten and Markus J. Buehler
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Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells

Imogen M. Pryce, Daniel D. Koleske, Arthur J. Fischer, and Harry A. Atwater

Appl. Phys. Lett. 96, 153501 (2010); http://dx.doi.org/10.1063/1.3377900 (3 pages) | Cited 26 times

Online Publication Date: 12 April 2010

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We demonstrate enhanced external quantum efficiency and current-voltage characteristics due to scattering by 100 nm silver nanoparticles in a single 2.5 nm thick InGaN quantum well photovoltaic device. Nanoparticle arrays were fabricated on the surface of the device using an anodic alumina template masking process. The Ag nanoparticles increase light scattering, light trapping, and carrier collection in the III-N semiconductor layers leading to enhancement of the external quantum efficiency by up to 54%. Additionally, the short-circuit current in cells with 200 nm p-GaN emitter regions is increased by 6% under AM 1.5 illumination. AFORS-Het simulation software results were used to predict cell performance and optimize emitter layer thickness.
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88.40.hj Efficiency and performance of solar cells
73.63.Hs Quantum wells
72.40.+w Photoconduction and photovoltaic effects
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
88.40.jm Thin film III-V and II-VI based solar cells

Single-crystal II-VI on Si single-junction and tandem solar cells

M. Carmody, S. Mallick, J. Margetis, R. Kodama, T. Biegala, D. Xu, P. Bechmann, J. W. Garland, and S. Sivananthan

Appl. Phys. Lett. 96, 153502 (2010); http://dx.doi.org/10.1063/1.3386529 (3 pages) | Cited 8 times

Online Publication Date: 12 April 2010

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CdTe is one of the leading materials used in solar photovoltaics. However, the maximum reported CdTe cell efficiencies are considerably lower than the theoretically expected efficiencies for the ∼ 1.48 eV CdTe band gap. We report a class of single crystal CdTe-based solar cells grown epitaxially on crystalline Si that show promise for enhancing the efficiency and greatly lowering the cost per watt of single-junction and multijunction solar cells. The current-voltage results for our CdZnTe on Si solar cells show open-circuit voltages significantly higher than previously reported for any II-VI cells and as close to the thermodynamic limit as the best III-V-based cells.
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88.40.jm Thin film III-V and II-VI based solar cells
88.40.hj Efficiency and performance of solar cells

Oxygen-atmosphere heat treatment in spin-on doping process for improving the performance of crystalline silicon solar cells

Zhengxin Liu (劉正新), Hidetaka Takato (高遠秀尚), Chiho Togashi (富樫千穂), and Isao Sakata (坂田功)

Appl. Phys. Lett. 96, 153503 (2010); http://dx.doi.org/10.1063/1.3394005 (3 pages) | Cited 2 times

Online Publication Date: 14 April 2010

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Spin-on doping of phosphorus has been investigated and applied for the emitter fabrication of crystalline Si solar cells. Heat treatment in oxygen atmosphere at relatively low temperature of 550 °C prior to phosphorus diffusion is proved effective for improving solar cell performance, showing a conversion efficiency enhancement of more than 0.2% absolute. Internal quantum efficiency measurements show obvious enhancements at both short and long-wavelength regions. Secondary ion mass spectroscopy and Infrared absorption analysis reveal reduced C impurities after the heat treatment, possibly caused by burning the organic residues in the coated dopant source layer.
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88.40.jj Silicon solar cells
88.40.hj Efficiency and performance of solar cells
61.72.uf Ge and Si
66.30.H- Self-diffusion and ionic conduction in nonmetals

High work function transparent middle electrode for organic tandem solar cells

D. J. D. Moet, P. de Bruyn, and P. W. M. Blom

Appl. Phys. Lett. 96, 153504 (2010); http://dx.doi.org/10.1063/1.3387863 (3 pages) | Cited 15 times

Online Publication Date: 16 April 2010

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The use of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) in combination with ZnO as middle electrode in solution-processed organic tandem solar cells requires a pH modification of the PEDOT:PSS dispersion. We demonstrate that this neutralization leads to a reduced work function of PEDOT:PSS, which does not affect the performance of polythiophene:fullerene solar cells, but results in a lower open-circuit voltage of devices based on a polyfluorene derivative with a higher ionization potential. The introduction of a thin layer of a perfluorinated ionomer recovers the anode work function and gives an open-circuit voltage of 1.92 V for a double junction polyfluorene-based solar cell.
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88.40.jr Organic photovoltaics
73.30.+y Surface double layers, Schottky barriers, and work functions
73.50.Pz Photoconduction and photovoltaic effects

Temperature dependent properties of InSb and InAs nanowire field-effect transistors

Henrik A. Nilsson, Philippe Caroff, Claes Thelander, Erik Lind, Olov Karlström, and Lars-Erik Wernersson

Appl. Phys. Lett. 96, 153505 (2010); http://dx.doi.org/10.1063/1.3402760 (3 pages) | Cited 17 times

Online Publication Date: 16 April 2010

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We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.
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85.30.Tv Field effect devices
81.07.Gf Nanowires
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