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12 Apr 2010

Volume 96, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 96, 153701 (2010); http://dx.doi.org/10.1063/1.3385388 (3 pages)

Sinan Keten and Markus J. Buehler
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Multiferroic properties and surface potential behaviors in cobalt-doped BiFeO3 film

Q. Zhang, C. H. Kim, Y. H. Jang, H. J. Hwang, and J. H. Cho

Appl. Phys. Lett. 96, 152901 (2010); http://dx.doi.org/10.1063/1.3391667 (3 pages) | Cited 11 times

Online Publication Date: 12 April 2010

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The spatial coexistence of magnetic and ferroelectric domains in multiferroic BiFe0.96Co0.04O3 film is confirmed by multimode scanning probe microscopy. The applied bias dependence of the surface potential in BiFe0.96Co0.04O3 indicates that surface potential is determined by the interplay of polarization and surface charges. It is also shown that multiferroic BiFe0.96Co0.04O3 can more easily trap surface charges than the well-known ferroelectric PbZr0.53Ti0.47O3. The time evolution of surface potential exhibits an exponential decay, which is closely related to the observed spread of surface charges. The study on BiFe0.96Co0.04O3 unveils the origin and evolution behavior of the surface potential in BiFeO3-based multiferroic films.
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77.55.Nv Multiferroic/magnetoelectric films
77.80.Dj Domain structure; hysteresis
75.60.Ch Domain walls and domain structure
75.50.Dd Nonmetallic ferromagnetic materials
61.72.up Other materials

Significant enhancement of magnetoelectric output in multiferroic heterostructural films modulated by electric polarization cycles

Yujie Wu, Jian-guo Wan, Jun-ming Liu, and Guanghou Wang

Appl. Phys. Lett. 96, 152902 (2010); http://dx.doi.org/10.1063/1.3394008 (3 pages) | Cited 5 times

Online Publication Date: 12 April 2010

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The Pb(Zr,Ti)O3/CoFe2O4/Pb(Zr,Ti)O3 heterostructural film was prepared and the variation in its magnetoelectric output with the cycling electric polarization was investigated. The giant magnetoelectric output, which was about one order enhancement in magnitude compared with the original film, was observed after the film was subjected to the cycling electric polarization with the strength of 45 MV/m and cycling number of ∼ 2.2×108. We consider that both oxygen vacancy migration in the heterostructure and the polarized electric charges in the CoFe2O4 layer play important roles in such significant magnetoelectric enhancement.
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75.85.+t Magnetoelectric effects, multiferroics
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
77.80.-e Ferroelectricity and antiferroelectricity
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.55.Nv Multiferroic/magnetoelectric films
75.50.Dd Nonmetallic ferromagnetic materials

Properties of a nanodielectric cryogenic resin

Georgios Polizos, Enis Tuncer, Isidor Sauers, and Karren L. More

Appl. Phys. Lett. 96, 152903 (2010); http://dx.doi.org/10.1063/1.3394011 (3 pages) | Cited 5 times

Online Publication Date: 12 April 2010

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Physical properties of a nanodielectric composed of in situ synthesized titanium dioxide (TiO2) nanoparticles ( ≤ 5 nm in diameter) and a cryogenic resin are reported. The dielectric losses were reduced by a factor of 2 in the nanocomposite, indicating that the presence of small TiO2 nanoparticles restricted the mobility of the polymer chains. Dielectric breakdown data of the nanodielectric was distributed over a narrower range than that of the unfilled resin. The nanodielectric had 1.56 times higher 1% breakdown probability than the resin, yielding 0.64 times thinner insulation thickness for the same voltage level, which is beneficial in high voltage engineering.
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77.22.Gm Dielectric loss and relaxation
77.22.Jp Dielectric breakdown and space-charge effects
81.05.Qk Reinforced polymers and polymer-based composites
81.16.-c Methods of micro- and nanofabrication and processing
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
77.84.Lf Composite materials

Right-angle piezoelectric cantilever with improved energy harvesting efficiency

Jia Wen Xu (徐佳文), Wei Wei Shao (邵维维), Fan Rang Kong (孔凡让), and Zhi Hua Feng (冯志华)

Appl. Phys. Lett. 96, 152904 (2010); http://dx.doi.org/10.1063/1.3374880 (3 pages) | Cited 8 times

Online Publication Date: 12 April 2010

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This paper reports a piezoelectric device based on a cantilever with an extended auxiliary part that forms a right angle with the basic part. Theoretical analyses and experiments support that, by using such a device, uniform strain distribution in piezoelectric element surfaces can be obtained, and thus the piezoelectric materials can be used more efficiently. A piezoelectric element on a right-angle cantilever can generate a useful power twice that of a traditional cantilever under the same strain limitation.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.60.-h Direct energy conversion and storage

An optimization-based “phase field” model for polycrystalline ferroelectrics

F. X. Li, X. L. Zhou, and A. K. Soh

Appl. Phys. Lett. 96, 152905 (2010); http://dx.doi.org/10.1063/1.3377899 (3 pages) | Cited 5 times

Online Publication Date: 13 April 2010

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An optimization-based computational model is proposed to study domain evolution in polycrystalline ferroelectrics composed of numerous grains, each of which consists of multiple domains. Domain switching is realized by an optimization process to minimize the free energy of each grain. Similar to phase field modeling, no priori domain-switching criterion is imposed in the proposed model. Moreover, by focusing on the volume fractions of domains only, the computational complexity of this model becomes much smaller and the domain textures evolution can be captured. Simulation results on both tetragonal and rhombohedral lead titanate zirconate ceramics illustrate the efficiency of this model.
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77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
77.84.Cg PZT ceramics and other titanates
65.40.G- Other thermodynamical quantities

Low temperature dielectric characterization of Mg-doped SrTiO3 thin films prepared by sol-gel

Olena Okhay, Aiying Wu, Paula M. Vilarinho, and Alexander Tkach

Appl. Phys. Lett. 96, 152906 (2010); http://dx.doi.org/10.1063/1.3360213 (3 pages) | Cited 2 times

Online Publication Date: 13 April 2010

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Voltage dependence of dielectric constant ε′ of ferroelectrics and low dielectric loss tan δ of incipient ferroelectrics make them attractive for tuning elements in microwave circuits. In this letter, field dependence of the low-temperature dielectric permittivity and polarization of Mg-doped SrTiO3 films is studied. Incorporation of Mg on both Sr and Ti sites decreases the ε′ and relative tunability nr of sol-gel derived SrTiO3 films, whereas polarization is reduced by Ti site substitution only. tan δ of the studied films is ≤ 0.012, decreasing at low temperatures down to 0.001 when Ti is substituted by 5% of Mg.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
77.80.-e Ferroelectricity and antiferroelectricity

Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure

Xiaolei Wang, Kai Han, Wenwu Wang, Shijie Chen, Xueli Ma, Dapeng Chen, Jing Zhang, Jun Du, Yuhua Xiong, and Anping Huang

Appl. Phys. Lett. 96, 152907 (2010); http://dx.doi.org/10.1063/1.3399359 (3 pages) | Cited 9 times

Online Publication Date: 15 April 2010

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A physical model on dipole formation at high-k/SiO2 interface is proposed to study possible mechanism of flatband voltage (VFB) shift in metal-oxide-semiconductor device with high-k/metal gate structure. Dielectric contact induced gap states (DCIGS) on high-k or SiO2 side induced by high-k and SiO2 contact are assigned to dominant origin of dipole formation. DCIGS induced interface dipole is considered to cause VFB shift through charge transfer effect. Based on the proposed model, directions of dipoles at several high-k/SiO2 interfaces are predicted, and magnitudes of dipoles are approximately calculated. Both directions and magnitudes are in agreement with the reported results.
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85.30.Tv Field effect devices
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions
77.55.D- High-permittivity gate dielectric films

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

Byungha Shin, Justin R. Weber, Rathnait D. Long, Paul K. Hurley, Chris G. Van de Walle, and Paul C. McIntyre

Appl. Phys. Lett. 96, 152908 (2010); http://dx.doi.org/10.1063/1.3399776 (3 pages) | Cited 24 times

Online Publication Date: 15 April 2010

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We report experimental and theoretical studies of defects producing fixed charge within Al2O3 layers grown by atomic layer deposition (ALD) on In0.53Ga0.47As(001) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt/ALD-Al2O3/n-In0.53Ga0.47As suggested the presence of positive bulk fixed charge and negative interfacial fixed charge within ALD-Al2O3. We identified oxygen and aluminum dangling bonds (DBs) as the origin of the fixed charge. First-principles calculations predicted possible passivation of both O and Al DBs, which would neutralize fixed charge, and this prediction was confirmed experimentally; postmetallization forming gas anneal removed most of the fixed charge in ALD-Al2O3.
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81.65.Rv Passivation
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
71.55.Eq III-V semiconductors

Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy

Min Hwan Lee, Kyung Min Kim, Gun Hwan Kim, Jun Yeong Seok, Seul Ji Song, Jung Ho Yoon, and Cheol Seong Hwang

Appl. Phys. Lett. 96, 152909 (2010); http://dx.doi.org/10.1063/1.3400222 (3 pages) | Cited 25 times

Online Publication Date: 16 April 2010

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See Also: Publisher's Note

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The electrical conduction mechanism within a resistive switching TiO2 film in its bipolar high resistance state was examined by ac impedance spectroscopy and dc current-voltage measurements. Bipolar switching, which can be initiated from a unipolar high resistance state, was attributed to both modulation of the Schottky barrier height at the film-electrode interface and the electronic energy state in the film. Numerical fittings of the impedance data revealed two distinct RC domains in series, which were attributed to an interfacial barrier (activation energy ∼ 0.1 eV) and a nonconducting layer (activation energy ∼ 0.5 eV), respectively.
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73.61.Le Other inorganic semiconductors
72.60.+g Mixed conductivity and conductivity transitions
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states
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