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12 Apr 2010

Volume 96, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 96, 153701 (2010); http://dx.doi.org/10.1063/1.3385388 (3 pages)

Sinan Keten and Markus J. Buehler
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Remote plasma assisted growth of graphene films

Gopichand Nandamuri, Sergei Roumimov, and Raj Solanki

Appl. Phys. Lett. 96, 154101 (2010); http://dx.doi.org/10.1063/1.3387812 (3 pages) | Cited 11 times

Online Publication Date: 13 April 2010

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Single and multiple layers of graphene films were grown on (111) oriented single crystals of nickel and polycrystalline nickel films using remote plasma assisted chemical vapor deposition. Remote plasma was employed to eliminate the effect of the plasma electrical field on the orientation of the grown graphene films, as well as to reduce the growth temperature compared to conventional chemical vapor deposition. The electrical and optical properties, including high resolution transmission electron microscopy of these films, suggest that this approach is both versatile and scalable for potential large area optoelectronic applications.
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81.05.ue Graphene
72.80.Vp Electronic transport in graphene
78.67.Wj Optical properties of graphene
68.55.J- Morphology of films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Longitudinal vibration mode of piezoelectric thick-film cantilever-based sensors in liquid media

Christophe Castille, Isabelle Dufour, and Claude Lucat

Appl. Phys. Lett. 96, 154102 (2010); http://dx.doi.org/10.1063/1.3387753 (3 pages) | Cited 13 times

Online Publication Date: 14 April 2010

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We report on the fabrication of a self-actuated resonant-microsensor, based on a thick-film piezoelectric cantilever, dedicated to either (bio)chemical detection in gaseous or liquid media or fluid characterization. The aim of this paper is to demonstrate that longitudinal modes can be used in highly viscous environments. Lower levels of fluid-solid interaction in comparison with classical flexural modes are expected from the results of our analytical model of a cantilever oscillating in a fluid. For example, in various fluid ranging from air to a Newtonian fluid of 300 cP viscosity, measured quality factors for the first longitudinal mode range from 300 to 20.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
47.61.Fg Flows in micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS)
07.10.Cm Micromechanical devices and systems
47.85.Np Fluidics

Origin of reverse annealing effect in hydrogen-implanted silicon

Z. F. Di, Y. Q. Wang, M. Nastasi, and N. David Theodore

Appl. Phys. Lett. 96, 154103 (2010); http://dx.doi.org/10.1063/1.3396987 (3 pages) | Cited 2 times

Online Publication Date: 15 April 2010

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In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. In this work, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induced platelets. Platelets are responsible for an increase in the height and width of the channeling damage peak following increased isochronal anneals.
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61.72.Cc Kinetics of defect formation and annealing
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.U- Doping and impurity implantation

Effects of metal buffer layer on characteristics of surface acoustic waves in ZnO/metal/diamond structures

Yuan-Feng Chiang, Chia-Chi Sung, and Ruyen Ro

Appl. Phys. Lett. 96, 154104 (2010); http://dx.doi.org/10.1063/1.3400219 (3 pages) | Cited 3 times

Online Publication Date: 15 April 2010

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The interdigital transducer (IDT)/ZnO/metal/diamond structure is investigated for use in the design surface acoustic wave (SAW) devices in the super-high-frequency (SHF) band. Simulation results indicate that adding a metal buffer layer with a finite thickness significantly increases the coupling coefficient. In the Sezawa mode, the coupling coefficient is 4.71% when an Al interlayer is applied. This coupling coefficient is 75% and 77% larger than those in the IDT/ZnO/diamond and IDT/ZnO/shorted surface/diamond structures, respectively. The results in this study are useful in designing SAW devices using diamond-based structures with a large coupling coefficient in the SHF band.
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43.38.Rh Surface acoustic wave transducers

Surface tension-driven chip self-assembly with load-free hydrogen fluoride-assisted direct bonding at room temperature for three-dimensional integrated circuits

T. Fukushima, E. Iwata, T. Konno, J.-C. Bea, K.-W. Lee, T. Tanaka, and M. Koyanagi

Appl. Phys. Lett. 96, 154105 (2010); http://dx.doi.org/10.1063/1.3328098 (3 pages) | Cited 7 times

Online Publication Date: 15 April 2010

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We have demonstrated fluidic chip self-assembly on Si wafers for fabricating three-dimensional integrated circuits. In this self-assembly technique, small droplets of hydrofluoric acid were employed to simultaneously align many millimeter-scale chips and directly bond them to the hydrophilic bonding areas formed on the host wafers by oxide–oxide bonding. The liquid surface tension enables many Si chips to be self-assembled with the highest alignment accuracy of 50 nm. In addition, many chips were tightly bonded to the hydrophilic bonding areas without applying a mechanical force after the liquid was evaporated at room temperature.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.30.-z Semiconductor devices
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