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12 Apr 2010

Volume 96, Issue 15, Articles (15xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 153701 (2010); http://dx.doi.org/10.1063/1.3385388 (3 pages)

Sinan Keten and Markus J. Buehler
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Pick, break, and placement of one-dimensional nanostructures for direct assembly and integration

Brian D. Sosnowchik, Jiyoung Chang, and Liwei Lin

Appl. Phys. Lett. 96, 153101 (2010); http://dx.doi.org/10.1063/1.3374879 (3 pages) | Cited 4 times

Online Publication Date: 12 April 2010

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A direct, simple, and versatile assembly method for the manipulation of one-dimensional nanostructures and their integration with microscale devices has been demonstrated. Using a probe station with an unbiased tungsten probe, the facile process has been employed to accurately pick, break, and place individual titanium dioxide nanoswords and zinc oxide nanowires under a room-temperature, dry environment. The surface morphology of the nanostructures, probe tips, and adhesion forces were characterized. As such, the technique could enable the rapid assembly of individual nanostructures with complementary metal-oxide-semiconductor-compatible or complex microscale devices.
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81.16.-c Methods of micro- and nanofabrication and processing
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.bg Semiconductors
81.07.Gf Nanowires
81.07.Vb Quantum wires

Production of carbonaceous nanostructures from a silver-carbon ambient spark

Jeong Hoon Byeon and Jang-Woo Kim

Appl. Phys. Lett. 96, 153102 (2010); http://dx.doi.org/10.1063/1.3396188 (3 pages) | Cited 7 times

Online Publication Date: 14 April 2010

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Using silver-carbon ambient sparks, hollow carbon nanospheres or multiwall carbon nanotubes were produced separately from carbon encapsulated silver nanoparticles (−1,400 K s−1) during relatively slow (−800 K s−1) or fast (−2,900 K s−1) cooling process. Different cooling processes (i.e., different exposures within high temperature) caused the formation of different carbon precipitates in the process of silver mediated graphitization: for −2,900 K s−1 and <−1,400 K s−1, respectively, obtained tubelike and sphere (encapsulated and hollow)-like carbonaceous nanostructures.
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81.07.De Nanotubes
61.46.Fg Nanotubes
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.07.Bc Nanocrystalline materials
52.77.-j Plasma applications

Crystal symmetry breaking in few-quintuple Bi2Te3 films: Applications in nanometrology of topological insulators

K. M. F. Shahil, M. Z. Hossain, D. Teweldebrhan, and A. A. Balandin

Appl. Phys. Lett. 96, 153103 (2010); http://dx.doi.org/10.1063/1.3396190 (3 pages) | Cited 34 times

Online Publication Date: 15 April 2010

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The authors report results of micro-Raman spectroscopy investigation of mechanically exfoliated single-crystal bismuth telluride films with thickness ranging from a few-nanometers to bulk limit. It is found that the optical phonon mode A1u, which is not-Raman active in bulk Bi2Te3 crystals, appears in the atomically-thin films due to crystal-symmetry breaking. The intensity ratios of the out-of-plane A1u and A1g modes to the in-plane Eg mode grow with decreasing film thickness. The evolution of Raman signatures with the film thickness can be used for identification of Bi2Te3 crystals with the thickness of few-quintuple layers important for topological insulator and thermoelectric applications.
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61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
78.66.Bz Metals and metallic alloys
78.30.Er Solid metals and alloys
63.20.-e Phonons in crystal lattices

Photoelectric performance of TiO2 nanotube array photoelectrodes cosensitized with CdS/CdSe quantum dots

Xian-Feng Gao, Wen-Tao Sun, Guo Ai, and Lian-Mao Peng

Appl. Phys. Lett. 96, 153104 (2010); http://dx.doi.org/10.1063/1.3386525 (3 pages) | Cited 16 times

Online Publication Date: 15 April 2010

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The photoresponse of TiO2 nanotube-array films in the visible region is shown to have been significantly improved by sensitizing them with CdS and CdSe semiconductor quantum dots using a sequential chemical bath deposition method. These quantum dots served as cosensitizers, and the performance of corresponding photoelectrode was measured in a photoelectrochemical solar cell. A 13.0 mA/cm2 short circuit current density is achieved with the TiO2/CdS/CdSe photoelectrode under AM 1.5G illuminations, which is higher than the direct sum of CdS and CdSe sensitized TiO2.
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88.40.J- Types of solar cells
88.40.hj Efficiency and performance of solar cells
82.45.Fk Electrodes
82.47.Jk Photoelectrochemical cells, photoelectrochromic and other hybrid electrochemical energy storage devices
84.60.Jt Photoelectric conversion

In situ x-ray diffraction study of graphitic carbon formed during heating and cooling of amorphous-C/Ni bilayers

K. L. Saenger, J. C. Tsang, A. A. Bol, J. O. Chu, A. Grill, and C. Lavoie

Appl. Phys. Lett. 96, 153105 (2010); http://dx.doi.org/10.1063/1.3397985 (3 pages) | Cited 10 times

Online Publication Date: 15 April 2010

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We examine graphitization of amorphous carbon (a-C) in a-C/Ni bilayer samples having the structure Si/SiO2/a-C(3–30 nm)/Ni(100 nm). In situ x-ray diffraction (XRD) measurements during heating in He at 3 °C/s to 1000 °C showed graphitic C formation beginning at temperatures T of 640–730 °C, suggesting graphitization by direct metal-induced crystallization, rather than by a dissolution/precipitation mechanism in which C is dissolved during heating and expelled from solution upon cooling. We also find that graphitic C, once formed, can be reversibly dissolved by heating to T>950 °C, and that nongraphitic C can be volatilized by annealing in H2-containing ambients.
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81.05.uf Graphite

Confinement in PbSe wires grown by rf magnetron sputtering

Hyeson Jung, Rade Kuljic, Michael A. Stroscio, and Mitra Dutta

Appl. Phys. Lett. 96, 153106 (2010); http://dx.doi.org/10.1063/1.3400215 (3 pages) | Cited 4 times

Online Publication Date: 15 April 2010

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Lead selenide (PbSe) nanowires were grown by magnetron sputtering on silicon with silicon dioxide (SiO2/Si) substrates, and characterized by scanning electron microscopy, x-ray diffraction, Fourier transform infrared spectroscopy, photoluminescence, and x-ray photoelectron spectroscopy. Closely packed PbSe nanowires of approximately 100 nm diameter grew in the 〈111〉 rock-salt cubic structure orientation. These large wires showed a large blueshift in the luminescence and absorption compared to the bulk crystal, demonstrating quantum confinement. This is attributed to a strong built-in field due to surface states, band bending, and a depletion layer which confines the carrier states.
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81.15.Cd Deposition by sputtering
68.55.A- Nucleation and growth
78.30.-j Infrared and Raman spectra
68.65.La Quantum wires (patterned in quantum wells)
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
81.07.Gf Nanowires

Light detection enhanced by surface plasmon resonance in metal film

Mitsuo Fukuda, Takuma Aihara, Kenzo Yamaguchi, Yu Y. Ling, Kazuma Miyaji, and Makoto Tohyama

Appl. Phys. Lett. 96, 153107 (2010); http://dx.doi.org/10.1063/1.3402771 (3 pages) | Cited 7 times

Online Publication Date: 15 April 2010

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Light detection enhanced by surface plasmons was confirmed in Au film/n-type Si Schottky structures. Electrons excited directly with light in Au film overflowed into the n-type silicon, and this excitation was enhanced by surface plasmons induced by Au nanorods attached to the Au film. Excitation was clearly observed in a wavelength range corresponding to the energy of less than the band gap of silicon. The feasibility of Schottky-type photodiodes, in which electrons were never generated by absorption in semiconductors but directly excited in metal, was experimentally demonstrated.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Kk Junction diodes
85.60.Dw Photodiodes; phototransistors; photoresistors

Fabrication of silicon nanopillar-based nanocapacitor arrays

Shih-wei Chang, Jihun Oh, Steven T. Boles, and Carl V. Thompson

Appl. Phys. Lett. 96, 153108 (2010); http://dx.doi.org/10.1063/1.3374889 (3 pages) | Cited 9 times

Online Publication Date: 15 April 2010

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We report the fabrication of silicon nanopillar-based nanocapacitor arrays using metal-assisted etching in conjunction with electrodeposition. The high aspect ratio made possible by the catalyzed etching provides for an increased effective electrode area and hence a significant improvement in the capacitance density. Electroplated Ni electrode forms a conformal layer over the silicon nanopillars. Capacitance measurements show the expected trend as a function of pillar height and array period. The fabrication approach is simple, compatible with integration into standard silicon technology, and easily scalable.
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84.32.Tt Capacitors
85.35.-p Nanoelectronic devices
81.16.-c Methods of micro- and nanofabrication and processing
81.65.Cf Surface cleaning, etching, patterning
81.15.Pq Electrodeposition, electroplating
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