APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 96 / Issue 16 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 163504 (2010); http://dx.doi.org/10.1063/1.3405692 (3 pages)

AlGaN based highly sensitive radio-frequency UV sensor

Venkata Chivukula1, Daumantas Ciplys1,2, Albertas Sereika2, Michael Shur1, Jinwei Yang3, and Remis Gaska1,3

1Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
2Department of Radiophysics, Vilnius University, Vilnius 10222, Lithuania
3Sensor Electronic Technology, Inc., 1195 Atlas Rd, Columbia, South Carolina 29209, USA

View MapView Map

(Received 15 January 2010; accepted 30 March 2010; published online 21 April 2010)

The response of the AlGaN based radio-frequency (rf) sensor to deep ultraviolet (UV) illumination was investigated. Illumination by UV light emitting diodes with wavelengths from 280 to 375 nm significantly decreased rf oscillator frequency due to change in the impedance of AlGaN-based metal-semiconductor-metal structure. The UV-induced frequency shift attains 400 kHz from the oscillator dark frequency of 144.5 MHz with the highest sensitivity of 40 kHz/(μW/cm2) at 280 nm wavelength and UV power density less than 7.4 μW/cm2. The AlGaN-based rf oscillator allows for a wireless visible-blind and solar-blind UV sensing.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

aluminium compounds, gallium compounds, III-V semiconductors, light emitting diodes, metal-semiconductor-metal structures, radiofrequency oscillators, ultraviolet detectors

PACS

  • 85.60.Gz

    Photodetectors (including infrared and CCD detectors)

  • 84.30.Ng

    Oscillators, pulse generators, and function generators

  • 73.40.Sx

    Metal-semiconductor-metal structures

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3405692

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    M. Razeghi and A. Rogalski, J. Appl. Phys. 79, 7433 (1996)JAPIAU000079000010007433000001.

    P. Sharma and K. Sreenivas, Appl. Phys. Lett. 83, 3617 (2003)APPLAB000083000017003617000001.

    C. -C. Ma, T. -J. Huang, and J. -M. Yu, J. Appl. Phys. 104, 033528 (2008)JAPIAU000104000003033528000001.

    D. Ciplys, R. Rimeika, M. S. Shur, S. Rumyantsev, R. Gaska, A. Sereika, J. Yang, and M. Asif Khan, Appl. Phys. Lett. 80, 2020 (2002)APPLAB000080000011002020000001.


For access to citing articles, you need to log in.


Figures (6)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. AlGaN based highly sensitive radio-frequency UV sensor
  2. Stress-based vapor sensing using resonant microbridges
  3. Continuous operation of high bit rate quantum key distribution
  4. Electron-nuclear spin control in charged semiconductor quantum dots by electrical currents through micro-coils
  5. Correlation of oxygen vacancy concentration and thermoelectric properties in Na0.73CoO2−δ
Go to AIP Home
Copyright © American Institute of Physics
close