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19 Apr 2010

Volume 96, Issue 16, Articles (16xxxx)

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Appl. Phys. Lett. 96, 163101 (2010); http://dx.doi.org/10.1063/1.3327831 (3 pages)

Ramesh Nath, Seungbum Hong, Jeffrey A. Klug, Alexandra Imre, Michael J. Bedzyk, Ram S. Katiyar, and Orlando Auciello
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Effects of cantilever buckling on vector piezoresponse force microscopy imaging of ferroelectric domains in BiFeO3 nanostructures

Ramesh Nath, Seungbum Hong, Jeffrey A. Klug, Alexandra Imre, Michael J. Bedzyk, Ram S. Katiyar, and Orlando Auciello

Appl. Phys. Lett. 96, 163101 (2010); http://dx.doi.org/10.1063/1.3327831 (3 pages) | Cited 14 times

Online Publication Date: 19 April 2010

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Systematic studies are presented on the effects of cantilever buckling in vector piezoresponse force microscopy (V-PFM) imaging of polarization domains in thin-film based (001)-oriented BiFeO3 nanostructures, as observed through the coupling of out-of-plane and in-plane PFM images. This effect is a strong function of the laser spot position on the cantilever, being strongest at the free end, and insignificant at 60% of the cantilever length from the pivot point. This finding provides a unique approach to V-PFM imaging of ferroelectric polarization domains, yielding three dimensional PFM images without sample rotation in the plane.
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77.80.Dj Domain structure; hysteresis
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.80.-e Ferroelectricity and antiferroelectricity
77.55.F- High-permittivity capacitive films
62.20.mq Buckling
81.40.Lm Deformation, plasticity, and creep

Electronic and magnetic properties of zigzag graphene nanoribbon with one edge saturated

B. Xu, J. Yin, Y. D. Xia, X. G. Wan, K. Jiang, and Z. G. Liu

Appl. Phys. Lett. 96, 163102 (2010); http://dx.doi.org/10.1063/1.3402762 (3 pages) | Cited 17 times

Online Publication Date: 19 April 2010

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We investigated the energetic stability, electronic, and magnetic properties of the zigzag graphene nanoribbons with one edge saturated by two hydrogen atoms, the other edge saturated by one hydrogen atom by using density-functional theory (DFT). The energy of the ferromagnetic semiconductor state is the lowest state for these nanoribbons. The energy difference between the antiferromagnetic states and the ferromagnetic states varies inversely with the nanoribbon width. Both the band gaps and the magnetic moments in the zigzag graphene nanoribbons with one edge saturated are larger than those of zigzag graphene nanoribbons.
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73.22.Pr Electronic structure of graphene
78.67.Wj Optical properties of graphene
75.75.-c Magnetic properties of nanostructures
75.50.Pp Magnetic semiconductors
75.30.Cr Saturation moments and magnetic susceptibilities
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

One-dimensional alignment of nanoparticles via magnetic sorting

R. Bouskila, R. McAloney, S. Mack, D. D. Awschalom, M. C. Goh, and K. S. Burch

Appl. Phys. Lett. 96, 163103 (2010); http://dx.doi.org/10.1063/1.3405732 (3 pages) | Cited 1 time

Online Publication Date: 19 April 2010

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Near room temperature, MnAs films align into two phases, one ferromagnetic and the other paramagnetic. These phases take the intriguing form of nanoscale wires. We have exploited this phase coexistence to form linear arrays of magnetite nanoparticles without the need for photolithography. This is confirmed via extensive scanning probe microscopy.
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81.07.Bc Nanocrystalline materials
75.50.Dd Nonmetallic ferromagnetic materials
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Tt Fine-particle systems; nanocrystalline materials
75.75.-c Magnetic properties of nanostructures
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Photoinduced deformation of azopolymer nanometric spheres

R. Barillé, P. Tajalli, S. Kucharski, E. Ortyl, and J.-M. Nunzi

Appl. Phys. Lett. 96, 163104 (2010); http://dx.doi.org/10.1063/1.3409123 (3 pages) | Cited 3 times

Online Publication Date: 20 April 2010

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Nanometric spheres of an azopolymer are obtained by micellization from a solution. We observe photoinduced deformation of the individual nanospheres under white light illumination. The diameter expands up to 35% parallel to the substrate surface. The magnitude of the force that is necessary to produce the same effect is estimated.
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81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Mechanical control of magnetic states of finite carbon chains encapsulated in single wall carbon nanotubes

B. Xu, J. Y. Lin, and Y. P. Feng

Appl. Phys. Lett. 96, 163105 (2010); http://dx.doi.org/10.1063/1.3397995 (3 pages) | Cited 1 time

Online Publication Date: 20 April 2010

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Effects of a lateral strain on finite carbon chains encapsulated in armchair carbon nanotubes are investigated using spin-polarized density functional theory. A strain induced transition between magnetic and nonmagnetic states of the encapsulated carbon chain is predicted at certain value of the applied strain which can be easily achieved experimentally, due to variation in interaction strength between the single wall carbon nanotube and the encapsulated carbon chain. Furthermore, this transition is reversible within a certain range of the applied strain. The proposed mechanical control of magnetic state of the hybrid system opens possibility for nanodevices such as mechanomagnetic switch or piezomagnetic sensors.
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75.80.+q Magnetomechanical effects, magnetostriction
75.75.-c Magnetic properties of nanostructures
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

GaN nanowire surface state observed using deep level optical spectroscopy

A. Armstrong, Q. Li, Y. Lin, A. A. Talin, and G. T. Wang

Appl. Phys. Lett. 96, 163106 (2010); http://dx.doi.org/10.1063/1.3404182 (3 pages) | Cited 13 times

Online Publication Date: 20 April 2010

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Deep level defects in n-type GaN nanowires (NWs) with and without an epitaxially-grown AlGaN shell were compared using photoconductivity-mode deep level optical spectroscopy. Hole photoemission from a defect state located approximately 2.6 eV above the valence band was observed for GaN NWs but was not observed for AlGaN/GaN core-shell NWs, indicating that this deep level is associated with a GaN surface state. Identifying GaN NW surface states and developing an effective passivation mechanism is expected to aid in the understanding and improvement of GaN NW-based sensors and optoelectronics.
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71.55.Eq III-V semiconductors
72.40.+w Photoconduction and photovoltaic effects
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Single charge detection of an electron created by a photon in a g-factor engineered quantum dot

Makoto Kuwahara, Takeshi Kutsuwa, Keiji Ono, and Hideo Kosaka

Appl. Phys. Lett. 96, 163107 (2010); http://dx.doi.org/10.1063/1.3407513 (3 pages) | Cited 3 times

Online Publication Date: 21 April 2010

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We demonstrate that a single photoelectron can be trapped in a single quantum dot, which is formed by gate-defining with a nearly-zero g-factor quantum well, and a charge state can be detected with a quantum point contact without destruction. The detection yield has a peak of 0.27 at the resonant photon energy of the dot exciton in photon flux of 4.1×10−10 W/mm2. The number-resolved counting statistics revealed that the yield for the second electron trap is drastically decreased from that for the first trap because of the Coulomb-blockade effect. The demonstrated function is essential for making a high-fidelity quantum interface.
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73.23.Hk Coulomb blockade; single-electron tunneling
72.40.+w Photoconduction and photovoltaic effects
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.63.Rt Nanoscale contacts
73.23.-b Electronic transport in mesoscopic systems

Enhanced generation of single optically active spins in diamond by ion implantation

Boris Naydenov, V. Richter, Johannes Beck, Matthias Steiner, Philipp Neumann, Gopalakrishnan Balasubramanian, Jocelyn Achard, Fedor Jelezko, Jörg Wrachtrup, and Rafi Kalish

Appl. Phys. Lett. 96, 163108 (2010); http://dx.doi.org/10.1063/1.3409221 (3 pages) | Cited 14 times

Online Publication Date: 22 April 2010

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The nitrogen-vacancy (NV) centers in diamond are amongst the most promising candidates for quantum information applications. Up to now the creation of such defects was highly probabilistic, requiring many copies of the nanodevice. Here we show that by employing a two step implantation process which includes low dose N2+ molecular ion implantations followed by high dose C implantation can increase the generation efficiency of NV centers by over 50%. Moreover, we detected intrinsic 14N concentration as low as 0.07 ppb by converting the nitrogen impurities into NV and then counting the single centers by using a confocal microscope.
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61.72.U- Doping and impurity implantation
61.72.jd Vacancies

Position dependent photodetector from large area reduced graphene oxide thin films

Surajit Ghosh, Biddut K. Sarker, Anindarupa Chunder, Lei Zhai, and Saiful I. Khondaker

Appl. Phys. Lett. 96, 163109 (2010); http://dx.doi.org/10.1063/1.3415499 (3 pages) | Cited 25 times

Online Publication Date: 22 April 2010

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We fabricated large area infrared photodetector devices from thin film of chemically reduced graphene oxide (RGO) sheets and studied their photoresponse as a function of laser position. We found that the photocurrent either increases, decreases, or remain almost zero depending upon the position of the laser spot with respect to the electrodes. The position sensitive photoresponse is explained by Schottky barrier modulation at the RGO film-electrode interface. The time response of the photocurrent is dramatically slower than single sheet of graphene possibly due to disorder from the chemical synthesis and interconnecting sheets.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
77.55.-g Dielectric thin films
82.45.Un Dielectric materials in electrochemistry
73.30.+y Surface double layers, Schottky barriers, and work functions

Sensitivity of nanotube chemical sensors at the onset of Poole–Frenkel conduction

Amin Salehi-Khojin, Christopher R. Field, Junghoon Yeom, and Richard I. Masel

Appl. Phys. Lett. 96, 163110 (2010); http://dx.doi.org/10.1063/1.3379291 (3 pages) | Cited 4 times

Online Publication Date: 22 April 2010

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We find that the applied electric field has an unexpectedly large effect on the sensitivity of a sensor consisting of a network array of carbon nanotubes. The sensors are insensitive to gas adsorption at low applied voltages and remains low until a critical potential is reached. The sensor response then rapidly increases over a small range of voltage. The critical voltage roughly corresponds to the barrier for electron hopping between defect sites. These results show that there is a correlation between the conduction mechanism in the nanotube and the sensitivity of the nanotube. Such a correlation has not been observed previously.
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85.35.Kt Nanotube devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Electrical current suppression in Pd-doped vanadium pentoxide nanowires caused by reduction in PdO due to hydrogen exposure

Byung Hoon Kim, Soon-Young Oh, Hu Young Jeong, Han Young Yu, Yong Ju Yun, Yark Yeon Kim, Won G. Hong, Jeong Yong Lee, and Hae Jin Kim

Appl. Phys. Lett. 96, 163111 (2010); http://dx.doi.org/10.1063/1.3394003 (3 pages) | Cited 4 times

Online Publication Date: 22 April 2010

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Pd nanoparticle-doped vanadium pentoxide nanowires (Pd-VONs) were synthesized. Electrical current suppression was observed when the Pd-VON was exposed to hydrogen gas, which cannot be explained by the work function changes mentioned in previous report such as Pd-doped carbon nanotubes and SnO2 nanowires. Using the x-ray photoelectron spectroscopy, we found that the reduction in PdO due to hydrogen exposure plays an important role in the current suppression of the Pd-VON.
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81.16.-c Methods of micro- and nanofabrication and processing
61.72.U- Doping and impurity implantation
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
73.30.+y Surface double layers, Schottky barriers, and work functions

Optical properties and electrical bistability of CdS nanoparticles synthesized in dodecanethiol

Aiwei Tang, Feng Teng, Yanbing Hou, Yongsheng Wang, Furui Tan, Shengchun Qu, and Zhanguo Wang

Appl. Phys. Lett. 96, 163112 (2010); http://dx.doi.org/10.1063/1.3402770 (3 pages) | Cited 7 times

Online Publication Date: 22 April 2010

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We reported the synthesis of CdS semiconductor nanoparticles using a simple one-pot reaction by thermolysis of cadmium acetylacetonate in dodecanethiol. Optical measurements of the as-obtained CdS nanoparticles revealed that their optical properties were closely related to surface effects. Based upon the cocktail of poly(N-vinylcarbazole) (PVK) and CdS nanoparticles, a bistable device was fabricated by a simple solution processing technique. Such a device exhibited a remarkable electrical bistability, which was attributed to the electric field-assisted charge transfer between PVK and the CdS nanoparticles capped by dodecaethiol. The conduction mechanism changed from an injection-controlled current to a bulk-controlled one during switching from OFF-state to ON-state.
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81.05.Dz II-VI semiconductors
81.07.Bc Nanocrystalline materials
85.30.-z Semiconductor devices
73.63.Bd Nanocrystalline materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.16.-c Methods of micro- and nanofabrication and processing

Lamellar nanostructures of silicon heterogeneously solidified on graphite sheets

Y. F. Li, H. Q. Yu, H. Li, K. M. Liew, and X. F. Liu

Appl. Phys. Lett. 96, 163113 (2010); http://dx.doi.org/10.1063/1.3407476 (3 pages) | Cited 3 times

Online Publication Date: 22 April 2010

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Molecular dynamics simulations are performed to examine the heterogeneous solidification of silicon on foreign graphite sheets (GSs). It clearly indicates that silicon atoms are concentrated to form hierarchical nanostructures composed of equidistant nanolayers. Graphite plate induces strong ordered liquid silicon layers near the surfaces of GSs. This study suggests ordered liquid layers should be the early form of the solid crystal, which determine the subsequent nucleation. The confined nanospace between two GSs favors the solidification and results in the decrease in the distance between layers. GSs make silicon atoms solidify into an hcp crystal rather than fcc structure.
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81.07.Bc Nanocrystalline materials
81.05.Cy Elemental semiconductors
64.70.dg Crystallization of specific substances
81.30.Fb Solidification
81.16.-c Methods of micro- and nanofabrication and processing
81.10.Fq Growth from melts; zone melting and refining
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