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Applied Physics Letters / Volume 96 / Issue 17 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 172103 (2010); http://dx.doi.org/10.1063/1.3396186 (3 pages)

Random pn-junctions for physical cryptography

C. Jaeger1, M. Algasinger1, U. Rührmair2, G. Csaba3, and M. Stutzmann1

1Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany
2Computer Science Department, Technische Universität München, Boltzmannstrasse 3, 85748 Garching, Germany
3Institute for Nanoelectronics, Technische Universität München, Arcisstrasse 21, 80333 München, Germany

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(Received 30 December 2009; accepted 23 March 2010; published online 27 April 2010)

In this paper, we report on high-rectification pn-diodes (rectification ratios up to 2×107) prepared by aluminum-induced crystallization on crystalline Si-wafers, which exhibit highly random I(V) characteristics. We argue that arrays of such diodes can be employed as physical uncloneable functions for cryptography. To resolve the structure of the active diode area, focused-ion beam imaging was used. The I(V) curves of the diodes reveal that both a smaller polycrystalline silicon film thickness and a smaller diode size lead to increasing randomness due to the increasing inhomogeneity of thinner films and due to more pronounced grain boundary effects for smaller diodes.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium, cryptography, crystal growth, crystallisation, elemental semiconductors, grain boundaries, p-n junctions, random processes, rectification, semiconductor diodes, semiconductor growth, semiconductor thin films, semiconductor-metal boundaries, silicon

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3396186

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    O. Nast and A. J. Hartmann, J. Appl. Phys. 88, 716 (2000)JAPIAU000088000002000716000001.

    O. Nast and S. R. Wenham, J. Appl. Phys. 88, 124 (2000)JAPIAU000088000001000124000001.

    G. Majni and G. Ottaviani, Appl. Phys. Lett. 31, 125 (1977)APPLAB000031000002000125000001.

    T. Antesberger, C. Jaeger, M. Scholz, and M. Stutzmann, Appl. Phys. Lett. 91, 201909 (2007)APPLAB000091000020201909000001.


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