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26 Apr 2010

Volume 96, Issue 17, Articles (17xxxx)

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Appl. Phys. Lett. 96, 173501 (2010); http://dx.doi.org/10.1063/1.3409475 (3 pages)

Seoung-Ki Lee, Houk Jang, Musarrat Hasan, Jae Bon Koo, and Jong-Hyun Ahn
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Mechanically flexible thin film transistors and logic gates on plastic substrates by use of single-crystal silicon wires from bulk wafers

Seoung-Ki Lee, Houk Jang, Musarrat Hasan, Jae Bon Koo, and Jong-Hyun Ahn

Appl. Phys. Lett. 96, 173501 (2010); http://dx.doi.org/10.1063/1.3409475 (3 pages) | Cited 4 times

Online Publication Date: 26 April 2010

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This letter presents a method to fabricate single-crystal silicon wires from (100) wafer and print them onto thin plastic substrates for high-performance, mechanically flexible, thin-film transistors by dry transfer printing. Electrical measurements indicate excellent performance, with a per ribbon mobility of 580 cm2/V s, subthreshold voltage of 100 mV/dec and on/off ratios >107. The inverter shows good performance and voltage gains of ∼ 2.5 at 3 V supply voltage. In addition, these devices revealed stable performance at bending configuration, an important feature essential for flexible electronic systems.
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85.30.Tv Field effect devices

Extraction of lateral eigenmode properties in thin film bulk acoustic wave resonator from interferometric measurements

Kimmo Kokkonen, Tuomas Pensala, Johanna Meltaus, and Matti Kaivola

Appl. Phys. Lett. 96, 173502 (2010); http://dx.doi.org/10.1063/1.3299012 (3 pages) | Cited 3 times

Online Publication Date: 26 April 2010

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A heterodyne laser interferometer is used to study acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator. The electrical response of the resonator exhibits a strong thickness resonance onto which spurious modes, caused by lateral standing plate waves, are superposed. Optical interferometer measurements are used to extract dispersion curves of the laterally propagating waves responsible for the spurious responses. A discrete eigenmode spectrum due to the finite lateral dimensions of the resonator is observed. An equivalent circuit model for a multimode resonator is fitted to the mechanical resonator response extracted along a single curve in the dispersion diagram, and is used to determine properties, such as Q-values, of the individual lateral eigenmodes. Measured wave field images, extracted dispersion curves, and the eigenmode spectrum with the model fitting results are presented.
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43.20.-f General linear acoustics
68.60.Bs Mechanical and acoustical properties
46.40.Cd Mechanical wave propagation (including diffraction, scattering, and dispersion)
02.10.Ud Linear algebra

Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

K. De Keyser, C. Van Bockstael, R. L. Van Meirhaeghe, C. Detavernier, E. Verleysen, H. Bender, W. Vandervorst, J. Jordan-Sweet, and C. Lavoie

Appl. Phys. Lett. 96, 173503 (2010); http://dx.doi.org/10.1063/1.3384997 (3 pages) | Cited 11 times

Online Publication Date: 27 April 2010

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The solid-state reaction and agglomeration of thin nickel-silicide films was investigated from sputter deposited nickel films (1–10 nm) on silicon-on-insulator (100) substrates. For typical anneals at a ramp rate of 3 °C/s, 5–10 nm Ni films react with silicon and form NiSi, which agglomerates at 550–650 °C, whereas films with a thickness of 3.7 nm of less were found to form an epitaxylike nickel-silicide layer. The resulting films show an increased thermal stability with a low electrical resistivity up to 800 °C.
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71.30.+h Metal-insulator transitions and other electronic transitions
73.61.Ng Insulators
81.15.Cd Deposition by sputtering
68.55.A- Nucleation and growth
82.30.-b Specific chemical reactions; reaction mechanisms
81.40.Gh Other heat and thermomechanical treatments

Pressure sensitive multifunctional solar cells using carbon nanotubes

Prakash R. Somani

Appl. Phys. Lett. 96, 173504 (2010); http://dx.doi.org/10.1063/1.3409119 (3 pages) | Cited 1 time

Online Publication Date: 28 April 2010

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A unique multifunctional device combining the photovoltaic action and pressure sensitivity is demonstrated which is based on the heterojunction of n-Si and carbon nanotubes (double walled carbon nanotubes or multiwalled carbon nanotubes) and using copper phthalocyanine surface modified indium-tin-oxide electrode and shows pressure dependent photovoltaic action. The device can work as a solar cell, pressure sensor, or photovoltaic pressure sensor. Such multifunctional organic/organic-inorganic hybrid solar cells are expected to find many applications in the near future.
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88.40.H- Solar cells (photovoltaics)
88.40.jp Multijunction solar cells
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Cantilever deflection measurement and actuation by an interdigitated transducer

E. Strambini, V. Piazza, P. Pingue, G. Biasiol, L. Sorba, and F. Beltram

Appl. Phys. Lett. 96, 173505 (2010); http://dx.doi.org/10.1063/1.3407516 (3 pages) | Cited 1 time

Online Publication Date: 29 April 2010

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A scheme that allows all-electrical high-bandwidth readout of a cantilever deflection by means of an integrated interdigitated transducer is presented. The present approach takes advantage of the piezoelectricity of the chosen cantilever substrate material to generate and detect surface-acoustic-waves by means of an interdigitated transducer (IDT) and to determine cantilever deflections. We shall also show that the same IDT can be used to excite the oscillation modes of the lever. Our scheme is compatible with implementations exploiting wireless excitation and readout and in mass sensing applications.
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89.20.Kk Engineering
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
43.35.Pt Surface waves in solids and liquids

The electric field enhancements by single-walled carbon nanotubes in In2S3/In2O3 photoelectrochemical solar cells

Jungwoo Lee, Wonjoo Lee, Eunkyung Park, Taehee Park, Yoon-Chae Nah, Sung-Hwan Han, and Whikun Yi

Appl. Phys. Lett. 96, 173506 (2010); http://dx.doi.org/10.1063/1.3405674 (3 pages) | Cited 1 time

Online Publication Date: 29 April 2010

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Using reverse-field emission (FE) current measurements, we demonstrate enhancement of the electric field by single-walled carbon nanotubes (SWNTs) in In2S3/In2O3 photoelectrochemical solar cells (PECs). In reverse-FE measurements, anode and cathode consists of In2S3/In2O3/(with or without) SWNTs on indium-doped tin oxide substrate and microtexturized tip silicon, respectively. The enhanced FE results for In2S3/In2O3/SWNTs show an electric field approximately two times more than In2S3/In2O3. The β value (i.e., electric field enhancement factor) of In2S3/In2O3 PECs with SWNT layers is 4950, which is ∼ 35.2% higher than that of In2S3/In2O3 PECs without SWNTs (3660). In PECs, the enhanced electric field intensifies the power of electron transfer, which accelerates the electron transfer rate in the cell.
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88.40.H- Solar cells (photovoltaics)
82.47.Jk Photoelectrochemical cells, photoelectrochromic and other hybrid electrochemical energy storage devices

Phototransistor with nanocrystalline Si/amorphous Si bilayer channel

Yuri Vygranenko, Arokia Nathan, Manuela Vieira, and Andrei Sazonov

Appl. Phys. Lett. 96, 173507 (2010); http://dx.doi.org/10.1063/1.3422479 (3 pages) | Cited 4 times

Online Publication Date: 30 April 2010

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We report a field-effect phototransistor with a channel comprising a thin nanocrystalline silicon transport layer and a thicker hydrogenated amorphous silicon absorption layer. The semiconductor and dielectric layers were deposited by radio-frequency plasma enhanced chemical vapor deposition. The phototransistor with channel length of 24 microns and photosensitive area of 1.4 mm2 shows an off-current of about 1 pA, and high photoconductive gain in the subthreshold region. Measurements of the quantum efficiency at different incident light intensities and biasing conditions, along with spectral-response characteristics, and threshold voltage stability characterization demonstrate the feasibility of the phototransistor for low light level detection.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Tv Field effect devices
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